CIRCUIT CARRIER, PACKAGE, AND METHOD FOR MANUFACTURING A PACKAGE

    公开(公告)号:US20210410299A1

    公开(公告)日:2021-12-30

    申请号:US17469453

    申请日:2021-09-08

    IPC分类号: H05K3/46 H05K3/40

    摘要: A circuit carrier includes a first side, two layers arranged to define an intermediate space there between, with at least one of the two layers being electrically conductive and attached to the first side. The at least one of the two layers has a region deformed such as to exhibit an indentation and has a trace structure in the indentation. A first insulating material fills the intermediate space, and a second insulating material fills the indentation, A second side in opposition to the first side is shaped to have in the deformed region a cut-out for receiving a bare die such as to come into an electrical contact with the at least one of the two layers.

    Semiconductor assembly
    7.
    发明授权

    公开(公告)号:US10998249B2

    公开(公告)日:2021-05-04

    申请号:US16958067

    申请日:2018-11-19

    摘要: A semiconductor assembly includes a semiconductor element having contacts on a first surface electrically connected with contacts of a carrier element by electrically conductive material. A second surface opposite the first surface has a convex curvature with a first radius or a concave curvature with a second radius. The second surface of the convex curvature or the second surface of the concave curvature is connected in a positive-fit manner to a cooling body surface of a concave cooling body curvature of the cooling body, and, during operation at a selected barrier layer temperature, the first radius of the convex curvature deviates by at most 10% from a third radius of the concave cooling body curvature, or the second radius of the concave curvature deviates by at most 10% from a fourth radius of the convex cooling body curvature.

    COOLING DEVICE
    8.
    发明申请
    COOLING DEVICE 审中-公开

    公开(公告)号:US20200305302A1

    公开(公告)日:2020-09-24

    申请号:US16607595

    申请日:2018-04-11

    IPC分类号: H05K7/20

    摘要: A cooling apparatus for cooling an electronic component includes a heat sink, a heat sink cover to close a top area opening of the heat sink, a tube-shaped cooling element arranged inside the heat sink for some cooling ribs of the heat sink in mechanical contact with an outer side of the tube-shaped cooling element, and an impeller with blades for generating a cooling flow of a cooling medium. The tube-shaped cooling element forms a first cooling duct to conduct the cooling flow in a first cooling flow direction. A second cooling duct opposite the first cooling duct is formed between an inner area of the heat sink and the outer side of the tube-shaped cooling element to conduct the cooling flow in a second cooling flow direction. The cooling flow is redirected from the first cooling duct to the second cooling duct or vice versa.

    Circuit board with implanted optical current sensor

    公开(公告)号:US10191091B2

    公开(公告)日:2019-01-29

    申请号:US15882273

    申请日:2018-01-29

    摘要: A circuit board with a conductor path having a recess, an implant with left, right, lower and upper edges arranged in the recess, where the implant has first and second optical layers, a second optical layer and a conductor arranged between them, the first and the second optical layer each have at least one light-conducting structure with first and second ends, where a light-conductor is arranged in a right edge of the implant, in which respective second ends of the light-conducting structures are located, such that light fed in at the first end of the optical fiber of the first optical layer is deflected to the second end of the light-conducting structure of the second optical layer such that a beam path of the light encompasses the conductor, and the circuit also includes an optical transmitter and an optical receiver with and evaluator that form a fiber optic current sensor.

    POWER MODULE, ELECTRICAL DEVICE AND METHOD FOR PRODUCING A POWER MODULE

    公开(公告)号:US20240304587A1

    公开(公告)日:2024-09-12

    申请号:US18277443

    申请日:2021-12-10

    IPC分类号: H01L23/00

    摘要: The invention relates to a power module (1) comprising a substrate (2). an electrically conductive intermediate layer (3) which is arranged on the substrate (2) and which has a joining region (4) produced by means of sintering, and at least one power component (5) which is arranged on the intermediate layer (3) and the sintered joining region (4) and is connected thereto (in particular at the load connection of the power component (5)) and which has at least one connection point (6) (e.g. a control connection) connected to the intermediate layer (3), wherein the intermediate layer (3) has. in the region of the associated connection point (6). a solder region (7) produced by means of a solder preform and spaced and/or electrically insulated from the sintered joining region (4). The large active surface, which is subjected to high thermomechanical stress in the service life test. can therefore be connected via the sintered joining region (4), which ensures an especially long-lasting, reliable and resilient mechanical connection between the associated power component (5) and the substrate (2). At the associated connection point (6), e.g. the gate of a transistor, the thermomechanical stress is usually much less, which is why there in the intermediate layer (3) a solder preform can be used for producing the connection between the associated power component (5) and the substrate (2), such solder preforms being relatively cost-effectively obtainable. Furthermore. an electrical device (10) has at least one such power module (1). The joining region (4) produced by means of sintering can be formed by means of a sinter preform or by means of 3D printing. by means of a coating method or by means of screen printing/stencil printing. In the method for producing the power module (1). the intermediate layer (3) can be heated to the melting temperature of the solder if the melting temperature of the solder is higher than the sintering temperature or to the sintering temperature if the sintering temperature is higher than the melting temperature of the solder, and the layer thickness (9) of the sintering material for the joining region (4) produced by means of sintering can be larger or smaller than the layer thickness (9) of the solder for the associated solder region (7) if the sintering temperature is correspondingly lower or higher than the melting temperature of the solder. Alternatively. the melting temperature of the solder can be substantially the same as the sintering temperature, and the layer thickness (9) of the sintering material for the joining region (4) produced by means of sintering can be substantially the same as the layer thickness (9) of the solder for the associated solder region (7). The sintered joining region (4) can have a sintering core (4″) which is in the form of solid material and which has. on each of its two sides. i.e. facing the power component (5) and facing the substrate (2), a sintering material (4′): also envisageable would be a layered. sintered joining region (4) in which sintering material and solid material alternate layer-by-layer. i.e. sintering material-solid material-sintering material-solid material-sintering material.