-
公开(公告)号：US20220181444A1
公开(公告)日：2022-06-09
申请号：US17541592
申请日：2021-12-03
发明人： Brendan TONER , Zhengchao LIU , Gary M. DOLNY , William R. RICHARDS , Manoj Chandrika Reghunathan , Stefan Eisenbrandt , Christoph Ellmers
摘要： Devices and methods for providing a power transistor structure with a shallow source region include implanting a dopant of a first dopant polarity into a drift region on a source side of a gate structure to form a body region, the body region being self-aligned to, and extending under, the gate structure, and producing a shallow body region wherein the source side hybrid contact mitigates punch through of the shallow self-aligned body region and suppresses triggering of a parasitic bipolar. A retrograde body well, of the first dopant polarity, may be disposed beneath, and noncontiguous with, the shallow self-aligned body region, wherein the retrograde body well improves the electric field profile of the shallow self-aligned body region. A variety of power transistor structures are produced from such devices and methods.
-
公开(公告)号：US20180212041A1
公开(公告)日：2018-07-26
申请号：US15927693
申请日：2018-03-21
申请人： Silicet, LLC
IPC分类号： H01L29/66 , H01L29/872 , H01L29/49 , H01L21/78 , H01L29/78 , H01L29/10 , H01L29/08 , H01L29/423 , H01L21/28 , H01L21/225 , H01L21/8238 , H01L21/8234 , H01L27/088 , H01L27/095
CPC分类号： H01L29/66643 , H01L21/225 , H01L21/28061 , H01L21/28123 , H01L21/7813 , H01L21/823412 , H01L21/823418 , H01L21/823814 , H01L21/823835 , H01L27/088 , H01L27/095 , H01L29/0856 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/42372 , H01L29/47 , H01L29/4933 , H01L29/665 , H01L29/66659 , H01L29/66674 , H01L29/66689 , H01L29/7806 , H01L29/7813 , H01L29/7816 , H01L29/7825 , H01L29/7835 , H01L29/7839 , H01L29/872
摘要： Devices, structures, and methods thereof for providing a Schottky or Schottky-like contact as a source region and/or a drain region of a power transistor are disclosed. A power transistor structure comprises a substrate of a first dopant polarity, a drift region formed on or within the substrate, a body region formed on or within the drift region, a gate structure formed on or within the substrate, a source region adjacent to the gate structure, a drain region formed adjacent to the gate structure. At least one of the source region and the drain region is formed from a Schottky or Schottky-like contact substantially near a surface of the substrate, comprising a silicide layer and an interfacial dopant segregation layer. The Schottky or Schottky-like contact is formed by low-temperature annealing a dopant segregation implant in the source and/or drain region.
-
公开(公告)号：US20170323970A1
公开(公告)日：2017-11-09
申请号：US15581768
申请日：2017-04-28
申请人： Silicet, LLC
CPC分类号： H01L29/7839 , H01L21/28518 , H01L29/4236 , H01L29/42376 , H01L29/47 , H01L29/665 , H01L29/66681 , H01L29/66689 , H01L29/7813 , H01L29/7816 , H01L29/7825 , H01L29/7835
摘要： Devices, structures, and methods thereof for providing a Schottky or Schottky-like contact as a source region and/or a drain region of a power transistor are disclosed. A power transistor structure comprises a substrate of a first dopant polarity, a drift region formed on or within the substrate, a body region formed on or within the drift region, a gate structure formed on or within the substrate, a source region adjacent to the gate structure, a drain region formed adjacent to the gate structure. At least one of the source region and the drain region is formed from a Schottky or Schottky-like contact substantially near a surface of the substrate, comprising a silicide layer and an interfacial dopant segregation layer. The Schottky or Schottky-like contact is formed by low-temperature annealing a dopant segregation implant in the source and/or drain region.
-
-
搜索结果
3 条记录 (耗时 0.018 秒)
