公开(公告)号：US10437520B2

公开(公告)日：2019-10-08

申请号：US16012782

申请日：2018-06-20

Applicant: Silicon Motion Inc.

Inventor： Wei-Lun Yan ,  Ming-Yen Lin ,  Chin-Pang Chang

IPC: G06F12/00 ,  G06F13/00 ,  G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C11/56

Abstract: A method for performing writing management in a memory device, the memory device, and the controller thereof are provided. The method may include: writing first partial data of even-page data into a non-volatile (NV) memory; transmitting a first set of commands without a confirmation command to the NV memory, to write the first partial data and second partial data of the even-page data into an internal buffer within the NV memory; transmitting a second set of commands and the confirmation command to the NV memory, to write the first partial data and the second partial data into a block of the NV memory; writing third partial data of odd-page data into the NV memory; and writing the first and the second partial data into an even page of another block of the NV memory, and writing the third and fourth partial data into an odd page of this block.

公开(公告)号：US20190235789A1

公开(公告)日：2019-08-01

申请号：US16012782

申请日：2018-06-20

Applicant: Silicon Motion Inc.

Inventor： Wei-Lun Yan ,  Ming-Yen Lin ,  Chin-Pang Chang

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/064 ,  G06F3/0656 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10

Abstract: A method for performing writing management in a memory device, the memory device, and the controller thereof are provided. The method may include: writing first partial data of even-page data into a non-volatile (NV) memory; transmitting a first set of commands without a confirmation command to the NV memory, to write the first partial data and second partial data of the even-page data into an internal buffer within the NV memory; transmitting a second set of commands and the confirmation command to the NV memory, to write the first partial data and the second partial data into a block of the NV memory; writing third partial data of odd-page data into the NV memory; and writing the first and the second partial data into an even page of another block of the NV memory, and writing the third and fourth partial data into an odd page of this block.

公开(公告)号：US10754585B2

公开(公告)日：2020-08-25

申请号：US16547594

申请日：2019-08-22

Applicant: Silicon Motion Inc.

Inventor： Wei-Lun Yan ,  Ming-Yen Lin ,  Chin-Pang Chang

IPC: G06F13/00 ,  G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C11/56

Abstract: A method for performing writing management in a memory device, the memory device, and the controller thereof are provided. The method may include: writing first partial data of even-page data into a non-volatile (NV) memory; transmitting a first set of commands without a confirmation command to the NV memory, to write the first partial data and second partial data of the even-page data into an internal buffer within the NV memory; transmitting a second set of commands and the confirmation command to the NV memory, to write the first partial data and the second partial data into a block of the NV memory; writing third partial data of odd-page data into the NV memory; and writing the first and the second partial data into an even page of another block of the NV memory, and writing the third and fourth partial data into an odd page of this block.

公开(公告)号：US20190377517A1

公开(公告)日：2019-12-12

申请号：US16547594

申请日：2019-08-22

Applicant: Silicon Motion Inc.

Inventor： Wei-Lun Yan ,  Ming-Yen Lin ,  Chin-Pang Chang

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10

Abstract: A method for performing writing management in a memory device, the memory device, and the controller thereof are provided. The method may include: writing first partial data of even-page data into a non-volatile (NV) memory; transmitting a first set of commands without a confirmation command to the NV memory, to write the first partial data and second partial data of the even-page data into an internal buffer within the NV memory; transmitting a second set of commands and the confirmation command to the NV memory, to write the first partial data and the second partial data into a block of the NV memory; writing third partial data of odd-page data into the NV memory; and writing the first and the second partial data into an even page of another block of the NV memory, and writing the third and fourth partial data into an odd page of this block.