公开(公告)号：US20240112729A1

公开(公告)日：2024-04-04

申请号：US18076129

申请日：2022-12-06

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van TRAN ,  Stephen TRINH ,  Stanley HONG ,  Thuan VU ,  Anh LY ,  Fan LUO

IPC: G11C11/56 ,  G06N3/04 ,  G11C16/10

CPC classification number: G11C11/5628 ,  G06N3/04 ,  G11C11/5671 ,  G11C16/10 ,  G11C2216/04

Abstract: Numerous examples are disclosed of programming multiple rows in an array in an artificial neural network as part of a single programming operation. In one example, a method comprises ramping up an output of a high voltage generator to a first voltage level; while maintaining the output of the high voltage generator at the first voltage level, programming a plurality of words of K rows of memory cells in an array of memory cells using the output of the high voltage generator, where K>1; and after the programming, ramping down the output of the high voltage generator to a second voltage level.