公开(公告)号：US20220139940A1

公开(公告)日：2022-05-05

申请号：US17152441

申请日：2021-01-19

Applicant: Silicon Storage Technology, Inc.

Inventor： Guo Xiang Song ,  CHUNMING WANG ,  LEO XING ,  XIAN LIU ,  NHAN DO

IPC: H01L27/11531 ,  H01L27/11521 ,  H01L29/423 ,  H01L29/78 ,  H01L29/788 ,  H01L21/28 ,  H01L29/66

Abstract: A method of forming memory cells, high voltage devices and logic devices on fins of a semiconductor substrate's upper surface, and the resulting memory device formed thereby. The memory cells are formed on a pair of the fins, where the floating gate is disposed between the pair of fins, the word line gate wraps around the pair of fins, the control gate is disposed over the floating gate, and the erase gate is disposed over the pair of fins and partially over the floating gate. The high voltage devices include HV gates that wrap around respective fins, and the logic devices include logic gates that are metal and wrap around respective fins.

公开(公告)号：US20220101920A1

公开(公告)日：2022-03-31

申请号：US17152696

申请日：2021-01-19

Applicant: Silicon Storage Technology, Inc.

Inventor： CHUNMING WANG ,  XIAN LIU ,  GUO XIANG SONG ,  LEO XING ,  NHAN DO

IPC: G11C16/04 ,  G11C16/16 ,  H01L29/423 ,  H01L27/11521 ,  H01L27/11556

Abstract: A memory device includes a semiconductor substrate, first and second regions in the substrate having a conductivity type different than that of the substrate, with a channel region in the substrate extending between the first and second regions. The channel region is continuous between the first and second regions. A first floating gate is disposed over and insulated from a first portion of the channel region. A second floating gate is disposed over and insulated from a second portion of the channel region. A first coupling gate is disposed over and insulated from the first floating gate. A second coupling gate is disposed over and insulated from the second floating gate. A word line gate is disposed over and insulated from a third portion of the channel region between the first and second channel region portions. An erase gate is disposed over and insulated from the word line gate.