公开(公告)号：US20170194055A1

公开(公告)日：2017-07-06

申请号：US15371496

申请日：2016-12-07

Applicant: Silicon Storage Technology, Inc.

Inventor： Xiaozhou Qian ,  Xiao Yan Pi ,  Kai Man Yue ,  Qing Rao ,  Lisa Bian

IPC: G11C16/26 ,  G11C16/24

CPC classification number: G11C16/26 ,  G11C7/062 ,  G11C7/067 ,  G11C7/14 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/28 ,  G11C16/32 ,  G11C2207/2254

Abstract: Multiple embodiments of a low power sense amplifier for use in a flash memory system are disclosed. In some embodiments, the loading on a sense amplifier can be adjusted by selectively attaching one or more bit lines to the sense amplifier, where the one or more bit lines each is coupled to an extraneous memory cell.

公开(公告)号：US10199109B2

公开(公告)日：2019-02-05

申请号：US15371496

申请日：2016-12-07

Applicant: Silicon Storage Technology, Inc.

Inventor： Xiaozhou Qian ,  Xiao Yan Pi ,  Kai Man Yue ,  Qing Rao ,  Lisa Bian

IPC: G11C16/28 ,  G11C16/26 ,  G11C16/24 ,  G11C7/06 ,  G11C7/14 ,  G11C16/04 ,  G11C16/32

Abstract: Multiple embodiments of a low power sense amplifier for use in a flash memory system are disclosed. In some embodiments, the loading on a sense amplifier can be adjusted by selectively attaching one or more bit lines to the sense amplifier, where the one or more bit lines each is coupled to an extraneous memory cell.