公开(公告)号：US20020158185A1

公开(公告)日：2002-10-31

申请号：US09841187

申请日：2001-04-25

申请人： Silicon Valley Group, Inc.

发明人： Michael L. Nelson ,  Justin L. Kreuzer ,  Peter L. Filosi ,  Christopher J. Mason

IPC分类号： G02B007/04

CPC分类号： G03F9/7019 ,  D21H23/34 ,  G03F9/7011 ,  G03F9/7026 ,  G03F9/7088 ,  H04N21/41415

摘要： A focus system that includes a calibration subsystem and a control subsystem. The control subsystem, which includes a control sensor, is in close proximity to the exposing of an image. The calibration subsystem, which includes a calibration sensor and a control sensor, is located remotely from, or off-axis with respect to, the exposing of an image. By separating calibration and control functions, the functional requirements can be separated into two (or more) types of sensors.

摘要翻译： 包括校准子系统和控制子系统的焦点系统。 包括控制传感器的控制子系统非常接近图像的曝光。 包括校准传感器和控制传感器的校准子系统相对于图像的曝光远离或离轴定位。 通过分离校准和控制功能，功能要求可以分为两种（或更多种）传感器。

公开(公告)号：US20020027718A1

公开(公告)日：2002-03-07

申请号：US09841166

申请日：2001-04-25

申请人： Silicon Valley Group, Inc.

发明人： Justin L. Kreuzer

IPC分类号： G02B027/14 ,  G02B027/12

CPC分类号： G03F7/70566 ,  G03F7/70225 ,  G03F7/70308 ,  G03F7/70358

摘要： An optical reduction system for use in the photolithographic manufacture of semiconductor devices having one or more quarter-wave plates operating near the long conjugate end. A quarter-wave plate after the reticle provides linearly polarized light at or near the beamsplitter. A quarter-wave plate before the reticle provides circularly polarized or generally unpolarized light at or near the reticle. Additional quarter-wave plates are used to further reduce transmission loss and asymmetries from feature orientation. The optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mmnull5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.

摘要翻译： 一种用于光刻制造半导体器件的光学还原系统，其具有在长的共轭端附近操作的一个或多个四分之一波片。 光栅后面的四分之一波片提供线偏振光。 光罩之前的四分之一波片在分划板处或附近提供圆偏振或一般非偏振光。 额外的四分之一波片用于进一步降低传输损耗和不对称性。 光学还原系统提供了相对较高的数值孔径0.7，能够在26mm×5mm的场上图形化小于0.25微米的特征。 因此，光学还原系统很好地适用于在半导体制造中使用的步进和扫描微光刻曝光工具。 其它几个实施例组合了不同屈光力的元件以扩大可实现的光谱带宽。

公开(公告)号：US20020027719A1

公开(公告)日：2002-03-07

申请号：US09841185

申请日：2001-04-25

申请人： Silicon Valley Group, Inc.

发明人： Justin L. Kreuzer

IPC分类号： G02B005/30 ,  G03B027/44 ,  G02B027/28 ,  G02B027/14 ,  G02B027/12

CPC分类号： G02B17/0892 ,  G02B5/3083 ,  G02B17/08 ,  G02B27/286 ,  G03F7/70225 ,  G03F7/70358 ,  G03F7/70566 ,  G03F7/70966

摘要： An optical reduction system with polarization dose sensitive output for use in the photolithographic manufacture of semiconductor devices having variable compensation for reticle retardation before the long conjugate end. The variable compensation component(s) before the reticle provides accurate adjustment of the polarization state at or near the reticle. The variable compensation components can be variable wave plates, layered wave plates, opposing mirrors, a Berek's compensator and/or a Soleil-Babinet compensator. The catadioptric optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mmnull5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.

摘要翻译： 一种具有极化剂量敏感输出的光学还原系统，用于在长共轭末端之前具有对光掩膜延迟的可变补偿的半导体器件的光刻制造。 掩模版之前的可变补偿分量可以精确调整光罩处或附近的偏振状态。 可变补偿分量可以是可变波片，分层波片，相对镜，Berek补偿器和/或Soleil-Babinet补偿器。 反折射光学还原系统提供了相对较高的数值孔径0.7，能够在26mm×5mm的场上图形化小于0.25微米的特征。 因此，光学还原系统很好地适用于在半导体制造中使用的步进和扫描微光刻曝光工具。 其它几个实施例组合了不同屈光力的元件以扩大可实现的光谱带宽。