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    Wafer Production Method
    1.
    发明申请
    Wafer Production Method 审中-公开

    公开(公告)号：US20200185267A1

    公开(公告)日：2020-06-11

    申请号：US16793429

    申请日：2020-02-18

    申请人： Siltectra GmbH

    发明人： Wolfram Drescher ,  Jan Richter ,  Christian Beyer

    IPC分类号： H01L21/762 ,  H01L23/00 ,  H01L23/544 ,  B23K26/0622 ,  B23K26/53 ,  H01L21/02 ,  B23K26/40 ,  B28D5/00 ,  H01L31/18 ,  H01L21/268 ,  B23K26/359

    摘要： A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

    Method for Thinning Solid Body Layers Provided with Components
    3.
    发明申请
    Method for Thinning Solid Body Layers Provided with Components 审中-公开

    公开(公告)号：US20200066542A1

    公开(公告)日：2020-02-27

    申请号：US16467765

    申请日：2017-12-12

    申请人： Siltectra GmbH

    发明人： Wolfram Drescher ,  Marko Swoboda ,  Ralf Rieske ,  Christian Beyer ,  Jan Richter

    IPC分类号： H01L21/324 ,  H01L21/02 ,  H01L21/304

    摘要： The present invention relates to a method for separating at least one solid-body layer (4) from at least one solid body (1). Thereby, the method as claimed in the invention comprises the steps: creating a plurality of modifications (9) by means of laser beams within the interior space of the solid body (1) to form a detachment plane (8), producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid body (1), wherein the exposed surface (5) is an integral part of the solid-body layer (4) to be separated, introducing an external force into the solid body (1) for generating tensions within the solid body (1), wherein the external force is so strong that the tensions initialize a crack propagation along the detachment plane (8), wherein the modifications for forming the detachment plane (8) are created before producing the composite structure.

    Method of producing large-scale layers of solid material
    4.
    发明授权
    Method of producing large-scale layers of solid material 有权

    公开(公告)号：US10029277B2

    公开(公告)日：2018-07-24

    申请号：US15101783

    申请日：2014-12-04

    申请人： SILTECTRA GmbH

    发明人： Lukas Lichtensteiger ,  Jan Richter ,  Wolfram Drescher

    IPC分类号： B05D3/00 ,  H01L21/304 ,  H01L21/02 ,  H01L31/18 ,  C30B1/02 ,  C30B29/40 ,  C30B33/00 ,  H01L33/00 ,  H01L33/32

    摘要： The invention relates to a method of producing at least one layer of solid material. This method comprises at the very least the steps of: providing a carrier substrate with a first exposed surface and with a second exposed surface; producing a detachment layer in the carrier substrate or over the first exposed surface of the carrier substrate, the detachment layer having an exposed surface; producing the first layer of solid material over the exposed surface of the detachment layer, the first layer of solid material having a free surface spaced apart from the detachment layer; positioning or forming a receiving layer on the second exposed surface of the carrier substrate or on the free surface of the first layer of solid material; generating stresses within the detachment layer, the stresses being generated by tempering at least the receiving layer, a crack propagating within the detachment layer or in the boundary region between the detachment layer and the first layer of solid material as a result of the stresses, the first layer of solid material being split off from the previously produced multi-layer arrangement by the crack.

    Method of producing stresses in a semiconductor wafer
    6.
    发明授权
    Method of producing stresses in a semiconductor wafer 有权

    公开(公告)号：US10825732B2

    公开(公告)日：2020-11-03

    申请号：US16736166

    申请日：2020-01-07

    申请人： Siltectra GmbH

    发明人： Lukas Lichtensteiger ,  Wolfram Drescher

    IPC分类号： H01L21/78 ,  H01L21/304 ,  H01L21/02 ,  H01L21/67 ,  H01L21/683

    摘要： A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.

    Method of Producing Stresses in a Semiconductor Wafer
    7.
    发明申请
    Method of Producing Stresses in a Semiconductor Wafer 审中-公开

    公开(公告)号：US20200144121A1

    公开(公告)日：2020-05-07

    申请号：US16736166

    申请日：2020-01-07

    申请人： Siltectra GmbH

    发明人： Lukas Lichtensteiger ,  Wolfram Drescher

    IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L21/304 ,  H01L21/67 ,  H01L21/02

    摘要： A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.

    Splitting method and use of a material in a splitting method
    9.
    发明授权
    Splitting method and use of a material in a splitting method 有权

    公开(公告)号：US10229835B2

    公开(公告)日：2019-03-12

    申请号：US15516781

    申请日：2015-10-06

    申请人： SILTECTRA GMBH

    发明人： Wolfram Drescher ,  Jan Richter ,  Christian Beyer

    IPC分类号： H01L21/304 ,  H01L21/02 ,  H01L31/18 ,  C08K3/08 ,  C08K3/36 ,  H01L21/78

    摘要： The overall yield of a splitting method for division of a solid-state starting material into at least two solid-state pieces is increased by use of a polymer hybrid material comprising one or more fillers in a polymer matrix. A corresponding splitting method comprises the steps of providing the solid-state starting material with at least one exposed surface, applying a polymer hybrid material comprising fillers in a polymer matrix to at least one exposed surface of the solid-state starting material, so as to result in a composite structure, and subjecting the composite structure to a stress field such that the solid-state starting material is split along a plane within the solid-state starting material into at least two solid-state pieces.

    METHOD FOR THE LOW-LOSS PRODUCTION OF MULTI-COMPONENT WAFERS
    10.
    发明申请
    METHOD FOR THE LOW-LOSS PRODUCTION OF MULTI-COMPONENT WAFERS 审中-公开

    公开(公告)号：US20180118562A1

    公开(公告)日：2018-05-03

    申请号：US15565445

    申请日：2015-06-23

    申请人： SILTECTRA GmbH

    发明人： Wolfram Drescher ,  Franz Schilling ,  Jan Richter

    IPC分类号： B81C1/00 ,  H01L21/762 ,  H01L31/18 ,  B23K26/00

    CPC分类号： B28D5/0011 ,  B23K26/53 ,  B23K2101/36 ,  B28D1/221 ,  B81C1/00357 ,  B81C1/0038 ,  B81C2201/0192 ,  H01L21/76251 ,  H01L31/1804 ,  H01L31/1896

    摘要： The present invention relates to a method for producing a multi-component wafer, in particular a MEMS wafer. The method according to the invention comprises at least the following steps: providing a bonding wafer (2), wherein at least one surface portion (4) of the bonding wafer (2) is formed by an oxide film, providing a dispenser wafer (6), wherein the dispenser wafer (6) is thicker than the bonding wafer (2), bringing the dispenser wafer (6) into contact with the surface portion (4) of the bonding wafer (2) that is formed by the oxide film, forming a multilayer arrangement (8) by connecting the dispenser wafer (6) and the bonding wafer (2) in the region of the contact, producing modifications (18) in the interior of the dispenser wafer (6) for predefining a detachment region (11) for separating the multilayer arrangement (8) into a detaching part (14) and a connecting part (16), wherein the production of the modifications (18) takes place before the formation of the multilayer arrangement (8) or after the formation of the multilayer arrangement (8), separating the multilayer arrangement along the detachment region as a result of a weakening of the multilayer arrangement brought about by the production of a sufficient number of modifications or as a result of production of mechanical stresses in the multilayer arrangement, wherein the connecting part (16) remains on the bonding wafer (2) and wherein the split-off detachment part (14) has a greater thickness than the connecting part (16).