公开(公告)号：US20180086630A1

公开(公告)日：2018-03-29

申请号：US15716538

申请日：2017-09-27

Applicant: Infineon Technologies AG

Inventor： Andre BROCKMEIER ,  Roland RUPP ,  Francisco Javier SANTOS RODRIGUEZ

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B3/0027 ,  B81B3/0097 ,  B81B2203/0118 ,  B81C1/00349 ,  B81C1/00357 ,  B81C2201/0192

Abstract: In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.

公开(公告)号：US20070122995A1

公开(公告)日：2007-05-31

申请号：US11627920

申请日：2007-01-26

Applicant: FRANCOIS HENLEY ,  Nathan Cheung

Inventor： FRANCOIS HENLEY ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/425

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US20060191627A1

公开(公告)日：2006-08-31

申请号：US11372542

申请日：2006-03-10

Applicant: Bernard Aspar ,  Chrystelle Lagache

Inventor： Bernard Aspar ,  Chrystelle Lagache

IPC: B32B38/10 ,  B32B37/00

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: A process for cutting out a block of material (10) comprising the following stages: (a) the formation in the block of a buried zone (12), embrittled by at least one stage of ion introduction, the buried zone defining at least one superficial part (14) of the block, (b) the formation at the level of the embrittled zone of at least one separation initiator (30, 36) by the use of a first means of separation chosen from amongst the insertion of a tool, the injection of a fluid, a thermal treatment and/or implantation of ions of an ionic nature different from that introduced during the preceding stage, and (c) the separation at the level of the embrittled zone of the superficial part (14) of the block from a remaining part (16), called the mass part, from the separation initiator (30, 36) by the use of a second means, different from the first means of separation and chosen from among a thermal treatment and/or the application of mechanical forces acting between the superficial part and the embrittled zone. Application for the manufacture of components for micro-electronics, opto-electronics or micro-mechanics.

Abstract translation: 一种用于切割材料块（10）的方法，包括以下阶段：（a）通过至少一个离子引入阶段脆化的埋入区（12）的块中的形成，所述掩埋区限定至少一个 块的表面部分（14），（b）通过使用从插入工具中选择的第一分离装置在至少一个分离引发剂（30,36）的脆化区的层面上形成， 流体的注入，离子性质的热处理和/或离子注入不同于在前一阶段引入的离子性离子，和（c）在所述表面部分（14）的脆化区域的水平分离 通过使用不同于第一分离装置的第二装置从选自热处理和/或应用程序的第二装置从分离引发剂（30,36）的剩余部分（16）中除去称为质量部分的块 的机械力作用在表面之间 部分和脆弱的区域。 用于制造微电子，光电子或微机械元件的应用。

公开(公告)号：US07029548B2

公开(公告)日：2006-04-18

申请号：US10312864

申请日：2001-07-11

Applicant: Bernard Aspar ,  Chrystelle Lagache

Inventor： Bernard Aspar ,  Chrystelle Lagache

IPC: B32B35/00

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: A process for cutting out a block of material includes a step of introducing ions in the block thereby forming an embrittled zone and defining at least one superficial part of the block. The method also includes a step of forming at least one separation initiator at the level of the embrittled zone, wherein the step of forming the separation initiator includes implanting ions of an ionic nature different from that introduced during the preceding step. The method further includes a step of separating at the level of the embrittled zone the superficial part of the block from a remaining part of the block from the separation initiator, wherein the separation step includes at least one of a thermal treatment and the application of mechanical forces acting between the superficial part and the embrittled zone.

Abstract translation: 用于切割材料块的方法包括在块中引入离子的步骤，从而形成脆化区并限定块的至少一个表面部分。 该方法还包括在脆化区的水平上形成至少一种分离引发剂的步骤，其中形成分离引发剂的步骤包括注入离子性质的离子，其与前述步骤中引入的离子性质不同。 该方法还包括在脆化区的水平上将块的表面部分与块的剩余部分从分离引发剂分离的步骤，其中分离步骤包括热处理和应用机械中的至少一种 在表面部分和脆弱区域之间作用的力。

公开(公告)号：US20050186758A1

公开(公告)日：2005-08-25

申请号：US10644644

申请日：2003-08-19

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06558802B1

公开(公告)日：2003-05-06

申请号：US09515253

申请日：2000-02-29

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B32B900

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.

Abstract translation: 一种混合硅硅衬底。 将单晶硅的薄膜（2101）接合到目标晶片（46）上。 在高温退火过程中，在薄膜和目标晶片之间形成高质量的结合。 相信高温退火工艺在界面处形成层间的共价键（2305）。 所得到的混合晶片适用于集成电路制造工艺，类似于具有外延层的晶片。

公开(公告)号：US20020081823A1

公开(公告)日：2002-06-27

申请号：US10090704

申请日：2002-03-04

Applicant: Silicon Genesis Corporation

Inventor： Nathan W. Cheung ,  Francois J. Henley

IPC: H01L021/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a weakened region in a selected manner at a selected depth (20) underneath the surface. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US06294814B1

公开(公告)日：2001-09-25

申请号：US09379996

申请日：1999-08-24

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L2900

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06245161B1

公开(公告)日：2001-06-12

申请号：US09026116

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01K2100

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: An economical hybrid wafer utilizing a lower-quality, lower cost transfer substrate to support a higher-quality thin film. A high-quality thin film (2101) is separated from a donor wafer (2100) and bonded to a transfer, or target, substrate (46). The donor wafer is preferably single-crystal silicon optimized for device fabrication, while the transfer substrate provides mechanical support. The thin film is not grown on the transfer substrate, and thus defects in the transfer substrate are not grown into the thin film. A low-temperature bonding process can provide an abrupt junction between the target wafer and the thin film.

Abstract translation: 一种经济的混合晶圆，利用较低质量，低成本的转移基板来支持更高质量的薄膜。 将高质量薄膜（2101）与施主晶片（2100）分离并结合到转移或靶基板（46）上。 施主晶片优选是针对器件制造而优化的单晶硅，而转移衬底提供机械支撑。 薄膜不会在转印衬底上生长，因此转印衬底中的缺陷不会生长到薄膜中。 低温接合工艺可以在目标晶片和薄膜之间提供突然的接合。

公开(公告)号：US6146979A

公开(公告)日：2000-11-14

申请号：US26032

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893

Abstract: A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the substrate. A global heat treatment of the substrate then creates a pressure effect to separate a thin film of material from the substrate. Additional gas-forming particles are introduced into the donor substrate and a second thin film of material is then separated from the donor substrate. In a specific embodiment, the gas-forming particles are implanted using a plasma immersion ion implantation method.

Abstract translation: 一种从供体衬底（10）形成材料（14）的薄膜的技术。 该技术具有通过供体基板（10）的表面将气体形成颗粒（12）引导到表面下方的选定深度的步骤。 气体形成颗粒在衬底内形成微泡层。 基板的全面热处理然后产生将基材薄膜分离的压力效应。 另外的气体形成颗粒被引入到供体衬底中，然后将第二材料薄膜与供体衬底分离。 在具体实施方案中，使用等离子体浸没离子注入方法注入气体形成颗粒。