公开(公告)号：US08679251B2

公开(公告)日：2014-03-25

申请号：US13858137

申请日：2013-04-08

申请人： Siltronic AG

发明人： Piotr Filar

IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B15/00 ,  C30B15/10 ,  C30B15/20 ,  C30B15/30

CPC分类号： C30B15/14 ,  C30B13/28 ,  C30B15/00 ,  C30B15/10 ,  C30B15/203 ,  C30B15/206 ,  C30B15/305 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B29/06 ,  C30B30/04 ,  Y10T117/1008 ,  Y10T117/1068

摘要： Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.

摘要翻译： 通过在坩埚中提供熔体，从熔体生长硅单晶; 在熔体上施加水平磁场; 将单一晶体和隔热层之间的气体引导到无熔融表面，并且控制气体在基本上垂直于磁感应的方向延伸的无熔融表面的区域上流动。 合适的装置具有用于保持熔体的坩埚; 围绕硅单晶的隔热罩具有下端，该下端连接到面向熔融物表面的底盖和相对于坩埚轴线的非轴对称形状，使得指向晶体与隔热罩之间的气体 使无熔融表面被迫流过基本上垂直于磁感应延伸的熔体区域。

公开(公告)号：US20130220216A1

公开(公告)日：2013-08-29

申请号：US13858137

申请日：2013-04-08

申请人： Siltronic AG

发明人： Piotr Filar

IPC分类号： C30B15/14

CPC分类号： C30B15/14 ,  C30B13/28 ,  C30B15/00 ,  C30B15/10 ,  C30B15/203 ,  C30B15/206 ,  C30B15/305 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B29/06 ,  C30B30/04 ,  Y10T117/1008 ,  Y10T117/1068

摘要： Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.

摘要翻译： 通过在坩埚中提供熔体，从熔体生长硅单晶; 在熔体上施加水平磁场; 将单一晶体和隔热层之间的气体引导到无熔融表面，并且控制气体在基本上垂直于磁感应的方向延伸的无熔融表面的区域上流动。 合适的装置具有用于保持熔体的坩埚; 围绕硅单晶的隔热罩具有下端，该下端连接到面向熔融物表面的底盖和相对于坩埚轴线的非轴对称形状，使得指向晶体与隔热罩之间的气体 使无熔融表面被迫流过基本上垂直于磁感应延伸的熔体区域。