公开(公告)号：US20140060421A1

公开(公告)日：2014-03-06

申请号：US13969818

申请日：2013-08-19

Applicant: Siltronic AG

Inventor： Josef Lobmeyer ,  Georg Brenninger ,  Waldemar Stein

IPC: C30B13/20

CPC classification number: C30B13/20 ,  C30B13/08 ,  C30B13/10 ,  C30B29/06

Abstract: A silicon single crystal is produced by a method wherein a silicon plate is inductively heated; granular silicon is melted on the silicon plate; and the molten silicon thus produced flows through a flow conduit in the center of the plate to a phase boundary at which a silicon single crystal crystallizes, wherein a silicon ring having a lower resistivity than the plate, and lying on the plate, is inductively heated prior to inductively heating the plate, and melting the ring.

Abstract translation: 通过以下方法制造硅单晶：其中硅板被感应加热; 颗粒状硅在硅板上熔化; 并且由此产生的熔融硅流过板的中心的流动管道到硅单晶结晶的相界面，其中具有比该板电阻率低的硅并且位于板上的硅环被感应加热 然后感应加热板，并使环熔化。

公开(公告)号：US09828692B2

公开(公告)日：2017-11-28

申请号：US14670477

申请日：2015-03-27

Applicant: SILTRONIC AG

Inventor： Georg Brenninger ,  Waldemar Stein ,  Maik Haeberlen

IPC: C30B13/08 ,  C30B11/10 ,  C30B11/00 ,  C30B29/06 ,  C30B15/12 ,  C30B15/02 ,  C30B13/14 ,  C30B13/20

CPC classification number: C30B11/10 ,  C30B11/001 ,  C30B11/003 ,  C30B13/08 ,  C30B13/14 ,  C30B13/20 ,  C30B15/02 ,  C30B15/12 ,  C30B29/06

Abstract: An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate; a device for metering granular silicon onto the plate; a first induction heating coil above the plate, provided for melting of the granular silicon deposited; a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, the distance between the elevations in a radial direction being not less than 2 mm and not more than 15 mm.

公开(公告)号：US09410262B2

公开(公告)日：2016-08-09

申请号：US13969818

申请日：2013-08-19

Applicant: Siltronic AG

Inventor： Josef Lobmeyer ,  Georg Brenninger ,  Waldemar Stein

IPC: C30B13/08 ,  C30B13/20 ,  C30B29/06 ,  C30B13/10

CPC classification number: C30B13/20 ,  C30B13/08 ,  C30B13/10 ,  C30B29/06

Abstract: A silicon single crystal is produced by a method wherein a silicon plate is inductively heated; granular silicon is melted on the silicon plate; and the molten silicon thus produced flows through a flow conduit in the center of the plate to a phase boundary at which a silicon single crystal crystallizes, wherein a silicon ring having a lower resistivity than the plate, and lying on the plate, is inductively heated prior to inductively heating the plate, and melting the ring.

Abstract translation: 通过以下方法制造硅单晶：其中硅板被感应加热; 颗粒状硅在硅板上熔化; 并且由此产生的熔融硅流过板的中心的流动管道到硅单晶结晶的相界面，其中具有比该板电阻率低的硅并且位于板上的硅环被感应加热 然后感应加热板，并使环熔化。