Semiconductor storage circuit
    1.
    发明授权

    公开(公告)号:US10943643B2

    公开(公告)日:2021-03-09

    申请号:US16847551

    申请日:2020-04-13

    Applicant: SOCIONEXT INC.

    Abstract: First and second memory cell arrays each having memory cells arranged in the X and Y directions lie side by side in the Y direction with space between them. A relay buffer is provided between first and second row decoders for buffering a control signal to be supplied to the second row decoder. An inter-array block between the first and second memory cell arrays is constituted by at least either a tap cell or a dummy memory cell. The relay buffer and the inter-array block are the same in position and size in the Y direction.

    SEMICONDUCTOR STORAGE CIRCUIT
    2.
    发明申请

    公开(公告)号:US20200243128A1

    公开(公告)日:2020-07-30

    申请号:US16847551

    申请日:2020-04-13

    Applicant: Socionext Inc.

    Abstract: First and second memory cell arrays each having memory cells arranged in the X and Y directions lie side by side in the Y direction with space between them. A relay buffer is provided between first and second row decoders for buffering a control signal to be supplied to the second row decoder. An inter-array block between the first and second memory cell arrays is constituted by at least either a tap cell or a dummy memory cell. The relay buffer and the inter-array block are the same in position and size in the Y direction.

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