公开(公告)号：US20250022747A1

公开(公告)日：2025-01-16

申请号：US18901953

申请日：2024-09-30

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  B32B7/12 ,  B32B9/04 ,  C30B29/68 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02 ,  H01L21/18 ,  H01L27/12 ,  H01L33/00

Abstract: A method for fabricating a structure comprises preparing a first pseudo-substrate, and in-depth weakening the first pseudo-substrate by ion implantation at a certain depth in the first pseudo-substrate. The first pseudo-substrate is prepared by providing a single crystal substrate comprising a piezoelectric material; forming an oxide layer on a surface of the single crystal substrate; and transferring a piezoelectric layer of the single crystal substrate adjacent the oxide layer to a handle substrate to form the first pseudo-substrate. The method further comprises bonding the first pseudo-substrate to a substrate to provide an assembly, and separating the assembly at the ion-implanted depth of the first pseudo-substrate to form the structure and a second pseudo-substrate. The structure comprises at least a portion of the piezoelectric layer of the single crystal substrate on the substrate.

公开(公告)号：US10910256B2

公开(公告)日：2021-02-02

申请号：US14422596

申请日：2013-09-06

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  B32B7/12 ,  B32B9/04 ,  B32B38/00 ,  C30B29/68 ,  C30B33/00 ,  H01L21/18 ,  H01L21/02 ,  C30B33/06 ,  H01L27/12 ,  H01L33/00

Abstract: The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

公开(公告)号：US20150243549A1

公开(公告)日：2015-08-27

申请号：US14422596

申请日：2013-09-06

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  H01L27/12 ,  C30B29/68 ,  B32B7/12 ,  B32B9/04

CPC classification number: H01L21/76251 ,  B32B7/12 ,  B32B9/04 ,  B32B2457/14 ,  C30B29/68 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02002 ,  H01L21/185 ,  H01L27/1203 ,  H01L33/0079 ,  Y10T156/1062 ,  Y10T428/24942

Abstract: The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

Abstract translation: 本发明涉及一种用于制造伪衬底的方法，包括以下步骤：提供单晶锭，提供手柄衬底，从单晶锭切割薄片，以及将薄片连接到手柄衬底上以形成伪 -基质。 根据本发明，薄片的厚度基本上等于或低于临界厚度，低于该临界厚度，如果单独的切片不再机械地稳定的话。 本发明还涉及半导体结构。

公开(公告)号：US20210050248A1

公开(公告)日：2021-02-18

申请号：US17088426

申请日：2020-11-03

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  C30B33/00 ,  H01L21/18 ,  H01L21/02 ,  C30B33/06 ,  B32B7/12 ,  B32B9/04 ,  C30B29/68 ,  H01L27/12

Abstract: The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

公开(公告)号：US12112976B2

公开(公告)日：2024-10-08

申请号：US17088426

申请日：2020-11-03

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  B32B7/12 ,  B32B9/04 ,  B32B38/00 ,  C30B29/68 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02 ,  H01L21/18 ,  H01L27/12 ,  H01L33/00

CPC classification number: H01L21/76251 ,  B32B7/12 ,  B32B9/04 ,  C30B29/68 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02002 ,  H01L21/185 ,  H01L27/1203 ,  B32B2457/14 ,  H01L33/0093 ,  Y10T156/1062 ,  Y10T428/24942

Abstract: The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.