公开(公告)号：US09627561B2

公开(公告)日：2017-04-18

申请号：US14679297

申请日：2015-04-06

申请人： SOLAR JUNCTION CORPORATION

发明人： Onur Fidaner ,  Michael West Wiemer ,  Vijit A. Sabnis ,  Ewelina Lucow

IPC分类号： H01L31/0352 ,  H01L31/0687 ,  H01L31/0304 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0693 ,  H01L21/306

CPC分类号： H01L31/0352 ,  H01L21/30612 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/186 ,  Y02E10/544 ,  Y02P70/521

摘要： A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.

公开(公告)号：US09263611B2

公开(公告)日：2016-02-16

申请号：US13679922

申请日：2012-11-16

申请人： Solar Junction Corporation

发明人： Onur Fidaner ,  Michael West Wiemer ,  Vijit A. Sabnis ,  Ewelina N. Lucow

IPC分类号： H01L31/0352 ,  H01L31/0693 ,  H01L31/18 ,  H01L21/306

CPC分类号： H01L31/0352 ,  H01L21/30612 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/186 ,  Y02E10/544 ,  Y02P70/521

摘要： A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.

摘要翻译： 提供单步湿式蚀刻工艺以隔离半导体衬底上的多结太阳能电池，其中湿法蚀刻化学非选择地去除半导体材料，而不会在不同的异质外延层之间的蚀刻速率有很大差异。 这样形成的太阳能电池包括在半导体衬底上外延生长的多个异质半导体层。

公开(公告)号：US09142615B2

公开(公告)日：2015-09-22

申请号：US14051149

申请日：2013-10-10

申请人： SOLAR JUNCTION CORPORATION

发明人： Onur Fidaner ,  Daniel Derkacs ,  Paul F. Lamarche ,  Michael W. Wiemer

IPC分类号： H01L29/06 ,  H01L21/764 ,  H01L31/0687 ,  G01R31/40

CPC分类号： H01L29/0657 ,  H01L21/764 ,  H01L31/0687 ,  H02S50/00 ,  H02S50/10 ,  Y02E10/544 ,  Y02P70/521

摘要： The present disclosure provides multi-junction solar cell structures and fabrication methods thereof that improve electrical testing capability and reduce chip failure rates. In the present invention a special masking pattern is used in the layout such that all or some of the epitaxial layers are etched away in the corner areas of each solar cell. Consequently, the semiconductor substrate or one or more of the interconnections between junctions become accessible from the top (the side facing the sun) to make electrical connections.

摘要翻译： 本公开提供了提供电测试能力并降低芯片故障率的多结太阳能电池结构及其制造方法。 在本发明中，在布局中使用特殊的掩模图案，使得在每个太阳能电池的拐角区域中蚀刻所有或一些外延层。 因此，半导体衬底或接点之间的一个或多个互连可从顶部（朝向太阳的一侧）接近以进行电连接。

公开(公告)号：US20130312817A1

公开(公告)日：2013-11-28

申请号：US13679922

申请日：2012-11-16

申请人： Solar Junction Corporation

发明人： Onur Fidaner ,  Michael West Wiemer ,  Vijit A. Sabnis ,  Ewelina N. Lucow

IPC分类号： H01L31/0352

CPC分类号： H01L31/0352 ,  H01L21/30612 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/186 ,  Y02E10/544 ,  Y02P70/521

摘要： A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.