公开(公告)号：US20190057990A1

公开(公告)日：2019-02-21

申请号：US16169735

申请日：2018-10-24

Applicant: SONY CORPORATION

Inventor： Yosuke TANAKA ,  Toshifumi WAKANO ,  Keiji TATANI ,  Takashi NAGANO ,  Hayato IWAMOTO ,  Keiichi NAKAZAWA ,  Tomoyuki HIRANO ,  Shinpei YAMAGUCHI ,  Shunsuke MARUYAMA

IPC: H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided

公开(公告)号：US20190109165A1

公开(公告)日：2019-04-11

申请号：US16213038

申请日：2018-12-07

Applicant: SONY CORPORATION

Inventor： Keiji TATANI ,  Tomoharu OGITA ,  Takashi NAGANO

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/232 ,  H04N5/3745

Abstract: The present disclosure relates to a solid-state image sensor, an electronic apparatus and an imaging method by which specific processing other than normal processing can be sped up with reduced power consumption.The solid-state image sensor includes a pixel outputting a pixel signal used to construct an image and a logic circuit driving the pixel, and is configured of a stacked structure in which a first semiconductor substrate including a plurality of the pixels and a second semiconductor substrate including the logic circuit are joined together. In addition, among the plurality of pixels, a specific pixel is connected to the logic circuit independently of a normal pixel, the specific pixel being the pixel that outputs the pixel signal used in the specific processing other than imaging processing in which the image is imaged. The present technology can be applied to a stacked solid-state image sensor, for example.

公开(公告)号：US20210043676A1

公开(公告)日：2021-02-11

申请号：US17068783

申请日：2020-10-12

Applicant: SONY CORPORATION

Inventor： Taku UMEBAYASHI ,  Keiji TATANI ,  Hajime INOUE ,  Ryuichi KANAMURA

IPC: H01L27/146

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

公开(公告)号：US20160218135A1

公开(公告)日：2016-07-28

申请号：US15087894

申请日：2016-03-31

Applicant: SONY CORPORATION

Inventor： Taku UMEBAYASHI ,  Keiji TATANI ,  Hajime INOUE ,  Ryuichi KANAMURA

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/1469

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

公开(公告)号：US20200035744A1

公开(公告)日：2020-01-30

申请号：US16555067

申请日：2019-08-29

Applicant: SONY CORPORATION

Inventor： Taku UMEBAYASHI ,  Keiji TATANI ,  Hajime INOUE ,  Ryuichi KANAMURA

IPC: H01L27/146

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

公开(公告)号：US20190229145A1

公开(公告)日：2019-07-25

申请号：US16373105

申请日：2019-04-02

Applicant: SONY CORPORATION

Inventor： Taku UMEBAYASHI ,  Keiji TATANI ,  Hajime INOUE ,  Ryuichi KANAMURA

IPC: H01L27/146

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

公开(公告)号：US20190019824A1

公开(公告)日：2019-01-17

申请号：US16121418

申请日：2018-09-04

Applicant: SONY CORPORATION

Inventor： Yosuke TANAKA ,  Toshifumi WAKANO ,  Keiji TATANI ,  Takashi NAGANO ,  Hayato IWAMOTO ,  Keiichi NAKAZAWA ,  Tomoyuki HIRANO ,  Shinpei YAMAGUCHI ,  Shunsuke MARUYAMA

IPC: H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided

公开(公告)号：US20180350867A1

公开(公告)日：2018-12-06

申请号：US16042094

申请日：2018-07-23

Applicant: SONY CORPORATION

Inventor： Taku UMEBAYASHI ,  Keiji TATANI ,  Hajime INOUE ,  Ryuichi KANAMURA

IPC: H01L27/146

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

公开(公告)号：US20180122850A1

公开(公告)日：2018-05-03

申请号：US15852468

申请日：2017-12-22

Applicant: SONY CORPORATION

Inventor： Taku UMEBAYASHI ,  Keiji TATANI ,  Hajime INOUE ,  Ryuichi KANAMURA

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/1469

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.

公开(公告)号：US20170148839A1

公开(公告)日：2017-05-25

申请号：US15403154

申请日：2017-01-10

Applicant: SONY CORPORATION

Inventor： Taku UMEBAYASHI ,  Keiji TATANI ,  Hajime INOUE ,  Ryuichi KANAMURA

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/1469

Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.