公开(公告)号：US20190174034A1

公开(公告)日：2019-06-06

申请号：US16251559

申请日：2019-01-18

Applicant: SONY CORPORATION

Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

IPC: H04N5/225 ,  H01L31/10 ,  H04N5/369 ,  H01L27/146 ,  H04N5/359 ,  H04N9/04 ,  H01L31/0232 ,  H04N5/374 ,  G02B1/118

CPC classification number: H04N5/2254 ,  G02B1/118 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/0203 ,  H01L31/02327 ,  H01L31/10 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3696 ,  H04N5/374 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20190189514A1

公开(公告)日：2019-06-20

申请号：US16322320

申请日：2017-06-08

Applicant: SONY CORPORATION

Inventor： Tomoharu OGITA

IPC: H01L21/8234 ,  H01L27/088 ,  H01L27/146 ,  H04N5/374

Abstract: To prevent a leakage current in a semiconductor integrated circuit in which a plurality of semiconductor substrates is laminated with a through-silicon via. Into a silicon substrate, one of P-type impurities and N-type impurities is implanted at a predetermined concentration. Into a plurality of channels, the other of the P-type impurities and the N-type impurities is implanted at a higher concentration than the predetermined concentration on one surface of the silicon substrate. An electrode is formed in each of the plurality of channels. Into a well layer, the same impurities as in the silicon substrate are implanted at a higher concentration than the predetermined concentration between the other surface of the silicon substrate and the plurality of channels.

公开(公告)号：US20190109165A1

公开(公告)日：2019-04-11

申请号：US16213038

申请日：2018-12-07

Applicant: SONY CORPORATION

Inventor： Keiji TATANI ,  Tomoharu OGITA ,  Takashi NAGANO

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/232 ,  H04N5/3745

Abstract: The present disclosure relates to a solid-state image sensor, an electronic apparatus and an imaging method by which specific processing other than normal processing can be sped up with reduced power consumption.The solid-state image sensor includes a pixel outputting a pixel signal used to construct an image and a logic circuit driving the pixel, and is configured of a stacked structure in which a first semiconductor substrate including a plurality of the pixels and a second semiconductor substrate including the logic circuit are joined together. In addition, among the plurality of pixels, a specific pixel is connected to the logic circuit independently of a normal pixel, the specific pixel being the pixel that outputs the pixel signal used in the specific processing other than imaging processing in which the image is imaged. The present technology can be applied to a stacked solid-state image sensor, for example.

公开(公告)号：US20180027157A1

公开(公告)日：2018-01-25

申请号：US15720993

申请日：2017-09-29

Applicant: SONY CORPORATION

Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

IPC: H04N5/225 ,  H01L27/146 ,  G02B1/118 ,  H01L31/0232 ,  H04N5/369

CPC classification number: H04N5/2254 ,  G02B1/118 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/02327 ,  H01L31/10 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3696 ,  H04N5/374 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20200296263A1

公开(公告)日：2020-09-17

申请号：US16885734

申请日：2020-05-28

Applicant: SONY CORPORATION

Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20200154011A1

公开(公告)日：2020-05-14

申请号：US16740060

申请日：2020-01-10

Applicant: SONY CORPORATION

Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture.The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20190174033A1

公开(公告)日：2019-06-06

申请号：US16251531

申请日：2019-01-18

Applicant: SONY CORPORATION

Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

IPC: H04N5/225 ,  H01L31/10 ,  H01L27/146 ,  H04N5/374 ,  H04N5/369 ,  H01L31/0232 ,  H04N9/04 ,  G02B1/118 ,  H04N5/359

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20210075942A1

公开(公告)日：2021-03-11

申请号：US17088133

申请日：2020-11-03

Applicant: SONY CORPORATION

Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H04N5/369 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20180324339A1

公开(公告)日：2018-11-08

申请号：US16040145

申请日：2018-07-19

Applicant: SONY CORPORATION

Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

IPC: H04N5/225 ,  H01L27/146 ,  H01L31/0232 ,  G02B1/118 ,  H04N5/369

CPC classification number: H04N5/2254 ,  G02B1/118 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/02327 ,  H01L31/10 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3696 ,  H04N5/374 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20170117310A1

公开(公告)日：2017-04-27

申请号：US15128629

申请日：2015-03-17

Applicant: Sony Corporation

Inventor： Keiji TATANI ,  Tomoharu OGITA ,  Takashi NAGANO

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/232

CPC classification number: H01L27/14605 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14665 ,  H04N5/23212 ,  H04N5/23251 ,  H04N5/3696 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N9/045

Abstract: The present disclosure relates to a solid-state image sensor, an electronic apparatus and an imaging method by which specific processing other than normal processing can be sped up with reduced power consumption. The solid-state image sensor includes a pixel outputting a pixel signal used to construct an image and a logic circuit driving the pixel, and is configured of a stacked structure in which a first semiconductor substrate including a plurality of the pixels and a second semiconductor substrate including the logic circuit are joined together. In addition, among the plurality of pixels, a specific pixel is connected to the logic circuit independently of a normal pixel, the specific pixel being the pixel that outputs the pixel signal used in the specific processing other than imaging processing in which the image is imaged. The present technology can be applied to a stacked solid-state image sensor, for example.