公开(公告)号：US20190296083A1

公开(公告)日：2019-09-26

申请号：US16306033

申请日：2017-04-24

Applicant: SONY CORPORATION

Inventor： MINORU IKARASHI ,  SEIJI NONOGUCHI ,  TAKEYUKI SONE ,  HIROAKI SEI ,  KAZUHIRO OHBA ,  JUN OKUNO

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: [Object] To provide a circuit element, a storage device, electronic equipment, a method of writing information into a circuit element, and a method of reading information from a circuit element. [Solution] The circuit element includes: paired inert electrodes; and a switch layer provided between the paired inert electrodes, configured to function as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

公开(公告)号：US20180019391A1

公开(公告)日：2018-01-18

申请号：US15545923

申请日：2016-01-08

Applicant: SONY CORPORATION

Inventor： KAZUHIRO OHBA ,  MINORU IKARASHI

IPC: H01L45/00 ,  H01L27/105 ,  H01L49/02

CPC classification number: H01L45/1253 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/224 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L49/02

Abstract: A selective device includes a first electrode, a second electrode, a switch device, and a non-linear resistive device. The second electrode is disposed to face the first electrode. The switch device is provided between the first electrode and the second electrode. The non-linear resistive device contains one or more of boron (B), silicon (Si), and carbon (C). The non-linear resistive device is coupled to the switch device in series.

公开(公告)号：US20160079526A1

公开(公告)日：2016-03-17

申请号：US14953731

申请日：2015-11-30

Applicant: SONY CORPORATION

Inventor： HIROAKI SEI ,  KAZUHIRO OHBA ,  TAKEYUKI SONE ,  MINORU IKARASHI

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1266 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive.

Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层含有一个可移动元件，体积电阻率约为150mΩ〜约1.2000mΩ（OHgr·cm）。

公开(公告)号：US20130334489A1

公开(公告)日：2013-12-19

申请号：US13912996

申请日：2013-06-07

Applicant: Sony Corporation

Inventor： HIROAKI SEI ,  KAZUHIRO OHBA ,  TAKEYUKI SONE ,  MINORU IKARASHI

IPC: H01L45/00

CPC classification number: H01L45/1266 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive.

Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层包含可移动元件，其体积电阻率约为150mOm·cm至约12000mOmega·cm。