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公开(公告)号：US20210151955A1
公开(公告)日：2021-05-20
申请号：US16627174
申请日：2018-04-27
申请人： Sony Corporation
发明人： Tatsushi HAMAGUCHI , Jugo MITOMO , Susumu SATO , Hiroshi NAKAJIMA , Masamichi ITO , Hidekazu KAWANISHI
摘要： A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.
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公开(公告)号：US20210135428A1
公开(公告)日：2021-05-06
申请号：US16471428
申请日：2017-10-13
申请人： Sony Corporation
摘要： A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.
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公开(公告)号：US20240332903A1
公开(公告)日：2024-10-03
申请号：US18671499
申请日：2024-05-22
申请人： Sony Corporation
CPC分类号： H01S5/18327 , H01S5/0207 , H01S5/18341 , H01S5/18369 , H01S5/2022 , H01S5/2219 , H01S5/34333 , H01S5/04253 , H01S5/04256 , H01S2301/176 , H01S2304/12
摘要： A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.
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公开(公告)号：US20230055932A1
公开(公告)日：2023-02-23
申请号：US17975219
申请日：2022-10-27
申请人： Sony Corporation
发明人： Susumu SATO , Tatsushi HAMAGUCHI , Shoichiro IZUMI , Noriyuki FUTAGAWA , Masamichi ITO , Jugo MITOMO , Hiroshi NAKAJIMA
摘要： A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.
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公开(公告)号：US20210104870A1
公开(公告)日：2021-04-08
申请号：US17127383
申请日：2020-12-18
申请人： Sony Corporation
发明人： Susumu SATO , Tatsushi HAMAGUCHI , Shoichiro IZUMI , Noriyuki FUTAGAWA , Masamichi ITO , Jugo MITOMO , Hiroshi NAKAJIMA
摘要： A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.
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公开(公告)号：US20200169061A1
公开(公告)日：2020-05-28
申请号：US16631709
申请日：2018-05-09
申请人： Sony Corporation
摘要： A light emitting element includes: a laminated structure 20 obtained by laminating a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a first light reflecting layer 41 disposed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 disposed on a second surface side of the second compound semiconductor layer 22; and light convergence/divergence changing means 50. The first light reflecting layer 41 is formed on a concave mirror portion 43. The second light reflecting layer 42 has a flat shape. When light generated in the active layer 23 is emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing means 50 is different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means 50.
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公开(公告)号：US20190334318A1
公开(公告)日：2019-10-31
申请号：US16463309
申请日：2017-10-19
申请人： Sony Corporation
发明人： Tatsushi HAMAGUCHI , Jugo MITOMO , Hiroshi NAKAJIMA , Masamichi ITO , Susumu SATO , Noriyuki FUTAGAWA
摘要： A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.
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公开(公告)号：US20190267774A1
公开(公告)日：2019-08-29
申请号：US16345803
申请日：2017-09-01
申请人： Sony Corporation
发明人： Susumu SATO , Tatsushi HAMAGUCHI , Shoichiro IZUMI , Noriyuki FUTAGAWA , Masamichi ITO , Jugo MITOMO , Hiroshi NAKAJIMA
摘要： A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.
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公开(公告)号：US20230208106A1
公开(公告)日：2023-06-29
申请号：US18111686
申请日：2023-02-20
申请人： Sony Corporation
CPC分类号： H01S5/18327 , H01S5/0207 , H01S5/18341 , H01S5/18369 , H01S5/34333 , H01S5/04253
摘要： A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.
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