公开(公告)号：US20240332902A1

公开(公告)日：2024-10-03

申请号：US18577709

申请日：2022-06-10

Applicant: Kazuhiro HARASAKA ,  Naoto JIKUTANI

Inventor： Kazuhiro HARASAKA ,  Naoto JIKUTANI

IPC: H01S5/183 ,  H01S5/00 ,  H01S5/042 ,  H01S5/062

CPC classification number: H01S5/18311 ,  H01S5/0014 ,  H01S5/04256 ,  H01S5/06216 ,  H01S5/18327

Abstract: A surface emitting includes: an active layer; multiple reflectors facing each other with the active layer therebetween; and an electrode pair coupled to a power supply device and configured to inject current into the active layer. The surface emitting laser has: a current injection period in which the current is injected by the power supply device to oscillate no laser beam; and a current decrease period after the current injection period, in which a current value of the current injected into the active layer is lower than a current value of the current injected during the current injection period, to oscillate a laser beam.

公开(公告)号：US12034274B2

公开(公告)日：2024-07-09

申请号：US18111686

申请日：2023-02-20

Applicant: Sony Corporation

Inventor： Tatsushi Hamaguchi ,  Jugo Mitomo ,  Hiroshi Nakajima ,  Masamichi Ito ,  Susumu Sato

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/18327 ,  H01S5/0207 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2022 ,  H01S5/2219 ,  H01S5/34333 ,  H01S5/04253 ,  H01S5/04256 ,  H01S2301/176 ,  H01S2304/12

Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

公开(公告)号：US11757252B2

公开(公告)日：2023-09-12

申请号：US17683947

申请日：2022-03-01

Applicant: II-VI Delaware, Inc.

Inventor： Mirko Hoser ,  Abram Jakubowicz ,  Tomi Leinonen

IPC: H01S5/183 ,  H01S5/30 ,  H01S5/20

CPC classification number: H01S5/18327 ,  H01S5/1835 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/18361 ,  H01S5/2081 ,  H01S5/3013

Abstract: A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.

公开(公告)号：US20190089128A1

公开(公告)日：2019-03-21

申请号：US16180041

申请日：2018-11-05

Applicant: APPLE INC.

Inventor： Chin Han Lin ,  Weiping Li ,  Xiaofeng Fan

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/42 ,  H01S5/026 ,  H01L29/15 ,  H01S5/187

CPC classification number: H01S5/18327 ,  H01L29/152 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18369 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/423 ,  H01S2301/176

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

公开(公告)号：US20180076598A1

公开(公告)日：2018-03-15

申请号：US15563636

申请日：2016-03-29

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： HOLGER MOENCH ,  ALEXANDER WEIGL ,  PHILIPP HENNING GERLACH

IPC: H01S5/42 ,  H01S5/068 ,  H01S5/022 ,  H01S5/183

CPC classification number: H01S5/423 ,  H01S5/02248 ,  H01S5/0282 ,  H01S5/06825 ,  H01S5/18327 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18377 ,  H01S5/18391

Abstract: The invention describes a laser device (100) comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel. The laser device (100) is adapted such that degradation of at least one mesa (120) results in a decreased laser power emitted by the laser device (100) in a defined solid angle when driven at the defined electrical input power. The laser device (100) is adapted such that eye safety of the laser device (100) is guaranteed during life time of the laser device (100). Eye safety may be guaranteed by designing the semiconductor structure or more general layer structure of mesas (120) of the laser device (100) in a way that degradation of one or more layers of the layer structure results in a reduction of the maximum optical power emitted in a defined solid angle. Alternatively or in addition, the electrical input power supplied to the laser device (100) may be controlled and adapted depending on the emitted optical power such that safety limits are not exceeded. The invention further relates to a laser module and an optical sensor (300) comprising such a laser device (100) and mobile communication device (400) comprising such an optical sensor (300). The invention further relates to a method of manufacturing such a laser device (100).

公开(公告)号：US20170201073A1

公开(公告)日：2017-07-13

申请号：US15314989

申请日：2015-04-16

Applicant: SONY CORPORATION

Inventor： NORIYUKI FUTAGAWA ,  TATSUSHI HAMAGUCHI ,  SHOICHIRO IZUMI ,  MASARU KURAMOTO

IPC: H01S5/343 ,  H01S5/183

CPC classification number: H01S5/34333 ,  H01L21/02293 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0334 ,  H01L21/28 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18327 ,  H01S5/18341 ,  H01S5/1835 ,  H01S5/18361 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3202 ,  H01S2301/176 ,  H01S2304/04 ,  H01S2304/12

Abstract: A light-emitting element includes at least a GaN substrate 11; a first light reflecting layer 41 formed on the GaN substrate 11 and functioning as a selective growth mask layer 44; a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 that are formed on the first light reflecting layer; and a second electrode 32 and a second light reflecting layer 42 that are formed on the second compound semiconductor layer 22. An off angle of the plane orientation of the surface of the GaN substrate 11 is 0.4 degrees or less, the area of the first light reflecting layer 41 is 0.8S0 or less, where S0 represents the area of the GaN substrate 11, and as a bottom layer 41A of the first light reflecting layer, a thermal expansion relaxation film 44 is formed on the GaN substrate 11.

公开(公告)号：US09466945B2

公开(公告)日：2016-10-11

申请号：US14827457

申请日：2015-08-17

Applicant: FUJI XEROX CO., LTD.

Inventor： Naoki Jogan ,  Jun Sakurai ,  Akemi Murakami ,  Takashi Kondo ,  Kazutaka Takeda ,  Junichiro Hayakawa

IPC: H01S5/00 ,  H01S5/187 ,  H01S5/20 ,  H01S5/343 ,  H01S5/183

CPC classification number: H01S5/187 ,  H01S5/183 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18319 ,  H01S5/18322 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18358 ,  H01S5/2027 ,  H01S5/34313 ,  H01S5/3432

Abstract: A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions.

Abstract translation: 表面发射半导体激光器件包括衬底和设置在衬底上的半导体层。 半导体层包括第一导电类型的第一半导体多层膜，第一间隔层，有源层，第二间隔层和第二导电类型的第二半导体多层膜。 第一半导体多层膜和第二半导体多层膜形成空腔。 由空腔和有源层的中心形成的驻波的图案的峰位于不同的位置。

公开(公告)号：US20150180209A1

公开(公告)日：2015-06-25

申请号：US14573622

申请日：2014-12-17

Applicant: Seiko Epson Corporation

Inventor： Satoshi TAKENAKA ,  Yuji KURACHI

IPC: H01S5/183

CPC classification number: H01S5/18313 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18352 ,  H01S5/18355 ,  H01S5/3201 ,  H01S2301/176

Abstract: A vertical cavity surface emitting laser includes: a substrate; a first mirror layer which is provided over the substrate; an active layer which is provided over the first mirror layer; a second mirror layer which is provided over the active layer; a first electrode and a second electrode which are electrically connected to the first mirror layer and are separated from each other; and a third electrode which is electrically connected to the second mirror layer, wherein the first mirror layer, the active layer, and the second mirror layer configure a laminated body, the laminated body includes a resonance portion which resonates light generated in the active layer, in a plan view, an insulation layer surrounding the laminated body is provided, and in the plan view, the insulation layer is provided between the first electrode and the second electrode.

Abstract translation: 垂直腔表面发射激光器包括：衬底; 设置在所述基板上的第一镜层; 设置在所述第一镜层上的有源层; 设置在有源层上的第二镜层; 电连接到第一镜层并彼此分离的第一电极和第二电极; 和与第二镜层电连接的第三电极，其中第一镜层，有源层和第二镜层构成层叠体，所述层叠体包括谐振部，其使在有源层中产生的光共振， 在平面图中，设置有围绕层叠体的绝缘层，并且在俯视图中，绝缘层设置在第一电极和第二电极之间。

公开(公告)号：US08917752B2

公开(公告)日：2014-12-23

申请号：US14111319

申请日：2012-05-09

Applicant: Ii-Sug Chung

Inventor： Ii-Sug Chung

IPC: H01S5/00 ,  H01S5/183

CPC classification number: H01S5/18302 ,  H01S5/0655 ,  H01S5/105 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18325 ,  H01S5/18327 ,  H01S5/18341 ,  H01S5/18366 ,  H01S5/18386 ,  H01S5/3095

Abstract: The invention relates to vertical cavity lasers (VCL) incorporating a reflectivity-modulated grating mirror (1) for modulating the laser output. A cavity is formed by a bottom mirror (4), an active region (3), and an outcoupling top grating mirror (1) formed by a periodic refractive index grating region in a layer structure comprising a p- and a n-doped semiconductor layer with an electrooptic material layer (12) arranged there between. The grating region comprises a grating structure formed by periodic perforations to change the refractive index periodically in directions normal to the oscillation axis. A modulated voltage (91) is applied in reverse bias between the n- and p-doped layers to modulate the refractive index of the electrooptic material layer (12) and thereby the reflectivity spectrum of the grating mirror (1). The reflectivity of the grating mirror (1) can be modulated between a reflectivity with little or no out coupling and a reflectivity with normal out coupling, wherein lasing in the VCL is supported at both the first and the second reflectivity. As the out coupling mirror modulates the output, the lasing does not need to be modulated, and the invention provides the advantage of lower power consumption at high modulation speeds.

Abstract translation: 本发明涉及结合有用于调制激光输出的反射率调制光栅镜（1）的垂直腔激光器（VCL）。 空腔由底部反射镜（4），有源区域（3）和外耦合顶部光栅反射镜（1）形成，该反射镜顶部光栅反射镜（1）由层状结构中的周期性折射率光栅区形成，该层结构包括p型和n型掺杂半导体 层，其间布置有电光材料层（12）。 光栅区域包括通过周期性穿孔形成的光栅结构，以便以垂直于振荡轴线的方向周期性地改变折射率。 调制电压（91）以反向偏压施加在n和p掺杂层之间，以调制电光材料层（12）的折射率，从而调整光栅镜（1）的反射光谱。 光栅反射镜（1）的反射率可以在具有很少或没有耦合的反射率和具有正向耦合的反射率之间进行调制，其中VCL上的激光在第一和第二反射率都被支持。 由于输出耦合镜调制输出，所以不需要对激光进行调制，本发明提供了在高调制速度下较低功耗的优点。

公开(公告)号：US20140301418A1

公开(公告)日：2014-10-09

申请号：US14095372

申请日：2013-12-03

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Seheon KIM ,  Axel SCHERER

IPC: H01S5/183 ,  H01S5/34

CPC classification number: H01S5/183 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035281 ,  H01L33/0045 ,  H01L2933/0083 ,  H01S5/041 ,  H01S5/105 ,  H01S5/18319 ,  H01S5/18327 ,  H01S5/18352 ,  H01S5/34 ,  H01S5/3412 ,  Y02E10/50

Abstract: Photonic crystal cavities and related devices and methods are described. The described cavities can be used as lasers, photovoltaic sources, and single photon sources. The cavities can be both optically and electrically pumped. A fabrication process of the cavities is also described.

Abstract translation: 描述了光子晶体腔及相关装置和方法。 所描述的空腔可以用作激光器，光电源和单个光子源。 空腔可以光学和电气泵送。 还描述了空腔的制造工艺。