公开(公告)号：US20150029374A1

公开(公告)日：2015-01-29

申请号：US14372501

申请日：2013-02-01

Applicant: Sony Corporation

Inventor： Yoshiaki Kitano

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/374 ,  H04N5/378

Abstract: The present disclosure relates to an image sensor, a manufacturing apparatus and method, and an imaging apparatus that are capable of further enlarging a charge accumulation region. In the image sensor of this disclosure, a channel portion of a readout transistor that constitutes a pixel and a floating diffusion are formed so as to be overlaid with each other at least partly. For example, the channel portion and the floating diffusion are formed in the form of a column on a surface of a photodiode that constitutes the pixel. This disclosure can be applied to the manufacturing apparatus and method, and the imaging apparatus, in addition to the image sensor.

Abstract translation: 本公开涉及能够进一步扩大电荷累积区域的图像传感器，制造装置和方法以及成像装置。 在本公开的图像传感器中，形成构成像素的读出晶体管的沟道部分和浮动扩散部，以至少部分地彼此重叠。 例如，通道部分和浮动扩散部以构成像素的光电二极管的表面上的列的形式形成。 除了图像传感器之外，本公开可以应用于制造装置和方法以及成像装置。

公开(公告)号：US20140061834A1

公开(公告)日：2014-03-06

申请号：US14045069

申请日：2013-10-03

Applicant: Sony Corporation

Inventor： Kyoko Izuha ,  Hiromi Wano ,  Yoshiaki Kitano

IPC: H01L31/0232

CPC classification number: H01L31/0232 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: A solid-state imaging device including pixel photododes on a light-receiving surface of a substrate; a first insulating film on the substrate covering a multilayer wiring on and in contact with the substrate. The first insulating film comprises material of a first refractive index lower than a refractive index of the substrate for at least bottom and top surface portions of the first insulating film. A second insulating film with a second refractive index higher than the first refractive index is on the first insulating film. A third insulating film with a third refractive index higher than the second refractive index is on the second insulating film. For each pixel, a color filter is on the third insulating film.

Abstract translation: 一种固态成像装置，包括在基板的受光面上的像素光电二极管; 衬底上的第一绝缘膜，覆盖在衬底上并与衬底接触的多层布线。 第一绝缘膜包括至少第一绝缘膜的底表面部分和顶表面部分的低于基板的折射率的第一折射率的材料。 在第一绝缘膜上具有第二折射率高于第一折射率的第二绝缘膜。 在第二绝缘膜上具有第三折射率高于第二折射率的第三绝缘膜。 对于每个像素，滤色器在第三绝缘膜上。

公开(公告)号：US09419157B2

公开(公告)日：2016-08-16

申请号：US14045069

申请日：2013-10-03

Applicant: Sony Corporation

Inventor： Kyoko Izuha ,  Hiromi Wano ,  Yoshiaki Kitano

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L31/0232 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: A solid-state imaging device including pixel photododes on a light-receiving surface of a substrate; a first insulating film on the substrate covering a multilayer wiring on and in contact with the substrate. The first insulating film comprises material of a first refractive index lower than a refractive index of the substrate for at least bottom and top surface portions of the first insulating film. A second insulating film with a second refractive index higher than the first refractive index is on the first insulating film. A third insulating film with a third refractive index higher than the second refractive index is on the second insulating film. For each pixel, a color filter is on the third insulating film.

Abstract translation: 一种固态成像装置，包括在基板的受光面上的像素光电二极管; 衬底上的第一绝缘膜，覆盖在衬底上并与衬底接触的多层布线。 第一绝缘膜包括至少第一绝缘膜的底表面部分和顶表面部分的低于基板的折射率的第一折射率的材料。 在第一绝缘膜上具有第二折射率高于第一折射率的第二绝缘膜。 在第二绝缘膜上具有第三折射率高于第二折射率的第三绝缘膜。 对于每个像素，滤色器在第三绝缘膜上。

公开(公告)号：US09571721B2

公开(公告)日：2017-02-14

申请号：US14916160

申请日：2015-06-23

Applicant: SONY CORPORATION

Inventor： Yoshiaki Kitano

IPC: H04N5/225 ,  H04N5/232 ,  G02B7/34 ,  G02B6/00 ,  H04N5/369 ,  H04N5/374 ,  G03B11/00 ,  H04N5/238 ,  G02B13/00 ,  H01L27/146

CPC classification number: H04N5/23212 ,  G02B6/00 ,  G02B7/34 ,  G02B13/0085 ,  G03B11/00 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/238 ,  H04N5/369 ,  H04N5/374 ,  H04N5/37457

Abstract: An imaging apparatus, for example, a solid-state imaging device, includes a phase difference pixel, and an electronic apparatus that optimizes the optical properties (pupil separation performance) of the phase difference pixel, and the optical properties (light sensitivity) of a standard pixel. The solid-state imaging device includes a standard pixel and a phase difference pixel. The standard pixel includes a first optical waveguide that guides incident light to a light receiving region. The phase difference pixel includes a second optical waveguide that guides incident light to the light receiving region, and a first light shielding film provided on the upper layer side of the second optical waveguide. The upper end of the first optical waveguide of the standard pixel and the upper end of the second optical waveguide of the phase difference pixel are located at different heights.

Abstract translation: 成像装置，例如固态成像装置，包括相位差像素和优化相位差像素的光学特性（光瞳分离性能）的电子设备和光学特性（光敏度） 标准像素 固态成像装置包括标准像素和相位差像素。 标准像素包括将入射光引导到光接收区域的第一光波导。 相位差像素包括将入射光引导到光接收区域的第二光波导和设置在第二光波导的上层侧的第一遮光膜。 标准像素的第一光波导的上端和相位差像素的第二光波导的上端位于不同的高度。