公开(公告)号：US20080044961A1

公开(公告)日：2008-02-21

申请号：US11777042

申请日：2007-07-12

申请人： Soo-Im JEONG ,  You-Kyoung LEE ,  Jin-Ho JU

发明人： Soo-Im JEONG ,  You-Kyoung LEE ,  Jin-Ho JU

IPC分类号： H01L21/336

CPC分类号： H01L27/12 ,  G02F1/136227 ,  H01L27/1248 ,  H01L27/1292

摘要： The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.

摘要翻译： 本发明提供一种薄膜晶体管阵列板，包括：绝缘基板; 形成在所述绝缘基板上并沿第一方向延伸的第一信号线; 形成在所述绝缘基板上的第二信号线，沿第二方向延伸并与所述第一信号线相交; 连接到第一和第二信号线的薄膜晶体管; 钝化层，其形成在所述第二信号线上并且具有暴露所述第二信号线的一部分的接触孔; 以及形成在所述钝化层上并通过所述接触孔连接到所述薄膜晶体管的像素电极，其中所述钝化层通过涂覆包括有机绝缘材料的有机溶液和包含至少一种PGMEP，EEP的溶剂形成， 和nBA。

公开(公告)号：US20060234494A1

公开(公告)日：2006-10-19

申请号：US11425970

申请日：2006-06-22

申请人： Kyung-In CHOI ,  Sang-Bom KANG ,  Seong-Geon PARK ,  You-Kyoung LEE ,  Gil-Heyun CHOI ,  Jong-Myeong LEE ,  Sang-Woo LEE

发明人： Kyung-In CHOI ,  Sang-Bom KANG ,  Seong-Geon PARK ,  You-Kyoung LEE ,  Gil-Heyun CHOI ,  Jong-Myeong LEE ,  Sang-Woo LEE

IPC分类号： H01L21/4763

CPC分类号： H01L21/28556 ,  C23C16/34 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76877

摘要： In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1-C6 alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.

摘要翻译： 在使用原子层沉积形成半导体器件的布线的方法中，在基板上形成绝缘中间层。 由化学式Ta（NR 1）3（NR 2 R 3）3表示的钽胺衍生物，其中 R 1，R 2和R 3代表H或C 1 -C 6 >烷基引入到绝缘中间层上。 一部分钽胺衍生物被化学吸附在绝缘中间层上。 在绝缘中间层上除去非化学吸附在绝缘中间层上的其余的钽胺衍生物。 将反应气体引入到绝缘中间层上。 化学吸附在绝缘中间层上的钽胺衍生物中的配体通过反应气体和配位体之间的化学反应从钽胺衍生物中除去以形成包括氮化钽的固体材料。 通过重复上述处理，将固体材料积聚在绝缘层间，形成布线。