公开(公告)号：US20050146965A1

公开(公告)日：2005-07-07

申请号：US10981652

申请日：2004-11-05

申请人： Soo-Young Kim ,  Sang-Jae Rhee ,  Min-Gyu Hwang

发明人： Soo-Young Kim ,  Sang-Jae Rhee ,  Min-Gyu Hwang

IPC分类号： G11C11/401 ,  G11C5/14 ,  G11C7/06 ,  G11C7/10 ,  H03K3/012 ,  H03K17/00 ,  H03K17/16

CPC分类号： G11C7/06 ,  G11C5/147 ,  G11C7/04 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/1084 ,  H03K3/012 ,  H03K17/164 ,  H03K2217/0036

摘要： A semiconductor memory device having internal circuits responsive to temperature data, in order to compensate an output characteristic change of the internal circuits and reduce power consumption depending on temperature change, and method thereof are disclosed. The semiconductor memory device may include a temperature sensing circuit and an internal circuit. The temperature sensing circuit may generate and output temperature data in response to ambient temperature of the semiconductor memory device. The internal circuit may adjust an output level of an output signal in response to the temperature data from the temperature sensing circuit.

摘要翻译： 具有响应于温度数据的内部电路的半导体存储器件及其方法被公开，以便补偿内部电路的输出特性变化并降低根据温度变化的功耗。 半导体存储器件可以包括温度检测电路和内部电路。 温度检测电路可以响应于半导体存储器件的环境温度产生和输出温度数据。 内部电路可以响应于来自温度感测电路的温度数据来调节输出信号的输出电平。

公开(公告)号：US07554869B2

公开(公告)日：2009-06-30

申请号：US10981652

申请日：2004-11-05

申请人： Soo-Young Kim ,  Sang-Jae Rhee ,  Min-Gyu Hwang

发明人： Soo-Young Kim ,  Sang-Jae Rhee ,  Min-Gyu Hwang

IPC分类号： G11C7/04

CPC分类号： G11C7/06 ,  G11C5/147 ,  G11C7/04 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/1084 ,  H03K3/012 ,  H03K17/164 ,  H03K2217/0036

摘要： A semiconductor memory device having internal circuits responsive to temperature data, in order to compensate an output characteristic change of the internal circuits and reduce power consumption depending on temperature change, and method thereof are disclosed. The semiconductor memory device may include a temperature sensing circuit and an internal circuit. The temperature sensing circuit may generate and output temperature data in response to ambient temperature of the semiconductor memory device. The internal circuit may adjust an output level of an output signal in response to the temperature data from the temperature sensing circuit.

摘要翻译： 具有响应于温度数据的内部电路的半导体存储器件及其方法被公开，以便补偿内部电路的输出特性变化并降低根据温度变化的功耗。 半导体存储器件可以包括温度检测电路和内部电路。 温度检测电路可以响应于半导体存储器件的环境温度产生和输出温度数据。 内部电路可以响应于来自温度感测电路的温度数据来调节输出信号的输出电平。

公开(公告)号：US07324398B2

公开(公告)日：2008-01-29

申请号：US11236372

申请日：2005-09-27

申请人： Jae-Eung Shim ,  Jung-Yong Choi ,  Young-Gu Kang ,  Min-Gyu Hwang

发明人： Jae-Eung Shim ,  Jung-Yong Choi ,  Young-Gu Kang ,  Min-Gyu Hwang

IPC分类号： G11C7/04

CPC分类号： G11C29/023 ,  G11C11/406 ,  G11C11/40615 ,  G11C11/40626 ,  G11C29/02 ,  G11C2029/5002

摘要： A memory device includes a temperature sensor configured to generate a temperature detection signal responsive to a temperature of the memory device and a self-refresh control circuit configured to control a refresh of the memory device responsive to the temperature detection signal. The device further includes a temperature-detection-error sensing circuit configured to assert a temperature-detection-error signal responsive to an error in the temperature detection signal. The temperature-detection-error sensing circuit may be configured to provide the asserted temperature-detection-error signal at a temperature-detection-error sensing pad configured to be coupled to an external device and/or the device may further include a temperature sensor control circuit configured to control the temperature detection signal responsive to the temperature-detection-error signal. Related operating and testing methods may be provided.

摘要翻译： 存储器装置包括：温度传感器，被配置为响应于存储器件的温度产生温度检测信号;以及自刷新控制电路，被配置为根据温度检测信号控制存储器件的刷新。 该装置还包括温度检测误差感测电路，其配置为响应温度检测信号的误差来声明温度检测误差信号。 温度检测误差感测电路可以被配置为在被配置为耦合到外部设备的温度检测误差感测板处提供断言的温度检测误差信号，和/或该设备还可以包括温度传感器控制 配置为响应于温度检测误差信号来控制温度检测信号的电路。 可以提供相关的操作和测试方法。

公开(公告)号：US20060077742A1

公开(公告)日：2006-04-13

申请号：US11236372

申请日：2005-09-27

申请人： Jae-Eung Shim ,  Jung-Yong Choi ,  Young-Gu Kang ,  Min-Gyu Hwang

发明人： Jae-Eung Shim ,  Jung-Yong Choi ,  Young-Gu Kang ,  Min-Gyu Hwang

IPC分类号： G11C7/00

CPC分类号： G11C29/023 ,  G11C11/406 ,  G11C11/40615 ,  G11C11/40626 ,  G11C29/02 ,  G11C2029/5002

摘要： A memory device includes a temperature sensor configured to generate a temperature detection signal responsive to a temperature of the memory device and a self-refresh control circuit configured to control a refresh of the memory device responsive to the temperature detection signal. The device further includes a temperature-detection-error sensing circuit configured to assert a temperature-detection-error signal responsive to an error in the temperature detection signal. The temperature-detection-error sensing circuit may be configured to provide the asserted temperature-detection-error signal at a temperature-detection-error sensing pad configured to be coupled to an external device and/or the device may further include a temperature sensor control circuit configured to control the temperature detection signal responsive to the temperature-detection-error signal. Related operating and testing methods may be provided.

摘要翻译： 存储装置包括：温度传感器，被配置为响应于存储器件的温度产生温度检测信号;以及自刷新控制电路，被配置为根据温度检测信号控制存储器件的刷新。 该装置还包括温度检测误差感测电路，其配置为响应温度检测信号的误差来声明温度检测误差信号。 温度检测误差感测电路可以被配置为在被配置为耦合到外部设备的温度检测误差感测板处提供断言的温度检测误差信号，和/或该设备还可以包括温度传感器控制 配置为响应于温度检测误差信号来控制温度检测信号的电路。 可以提供相关的操作和测试方法。