公开(公告)号：US07554869B2

公开(公告)日：2009-06-30

申请号：US10981652

申请日：2004-11-05

申请人： Soo-Young Kim ,  Sang-Jae Rhee ,  Min-Gyu Hwang

发明人： Soo-Young Kim ,  Sang-Jae Rhee ,  Min-Gyu Hwang

IPC分类号： G11C7/04

CPC分类号： G11C7/06 ,  G11C5/147 ,  G11C7/04 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/1084 ,  H03K3/012 ,  H03K17/164 ,  H03K2217/0036

摘要： A semiconductor memory device having internal circuits responsive to temperature data, in order to compensate an output characteristic change of the internal circuits and reduce power consumption depending on temperature change, and method thereof are disclosed. The semiconductor memory device may include a temperature sensing circuit and an internal circuit. The temperature sensing circuit may generate and output temperature data in response to ambient temperature of the semiconductor memory device. The internal circuit may adjust an output level of an output signal in response to the temperature data from the temperature sensing circuit.

摘要翻译： 具有响应于温度数据的内部电路的半导体存储器件及其方法被公开，以便补偿内部电路的输出特性变化并降低根据温度变化的功耗。 半导体存储器件可以包括温度检测电路和内部电路。 温度检测电路可以响应于半导体存储器件的环境温度产生和输出温度数据。 内部电路可以响应于来自温度感测电路的温度数据来调节输出信号的输出电平。

公开(公告)号：US20050146965A1

公开(公告)日：2005-07-07

申请号：US10981652

申请日：2004-11-05

申请人： Soo-Young Kim ,  Sang-Jae Rhee ,  Min-Gyu Hwang

发明人： Soo-Young Kim ,  Sang-Jae Rhee ,  Min-Gyu Hwang

IPC分类号： G11C11/401 ,  G11C5/14 ,  G11C7/06 ,  G11C7/10 ,  H03K3/012 ,  H03K17/00 ,  H03K17/16

CPC分类号： G11C7/06 ,  G11C5/147 ,  G11C7/04 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/1084 ,  H03K3/012 ,  H03K17/164 ,  H03K2217/0036

摘要： A semiconductor memory device having internal circuits responsive to temperature data, in order to compensate an output characteristic change of the internal circuits and reduce power consumption depending on temperature change, and method thereof are disclosed. The semiconductor memory device may include a temperature sensing circuit and an internal circuit. The temperature sensing circuit may generate and output temperature data in response to ambient temperature of the semiconductor memory device. The internal circuit may adjust an output level of an output signal in response to the temperature data from the temperature sensing circuit.

摘要翻译： 具有响应于温度数据的内部电路的半导体存储器件及其方法被公开，以便补偿内部电路的输出特性变化并降低根据温度变化的功耗。 半导体存储器件可以包括温度检测电路和内部电路。 温度检测电路可以响应于半导体存储器件的环境温度产生和输出温度数据。 内部电路可以响应于来自温度感测电路的温度数据来调节输出信号的输出电平。

公开(公告)号：US20070171248A1

公开(公告)日：2007-07-26

申请号：US11650487

申请日：2007-01-08

申请人： Soo-Young Kim ,  Heung-Sup Jeong ,  Se-Hyun Lyu

发明人： Soo-Young Kim ,  Heung-Sup Jeong ,  Se-Hyun Lyu

IPC分类号： B41J29/38

CPC分类号： G03G15/757

摘要： A method and apparatus for compensating image skew and an electro-photographic image forming apparatus including the same are provided. Image skew of a toner image transferred onto a paper is compensated for by inclining a photosensitive medium onto which a light beam is scanned to be parallel to a scanning line of the light beam. A first inclination member including a first inclined surface facing upward and a second inclination member including a second inclined surface contacting and facing the first inclined surface are provided, wherein a position of a shaft of the photosensitive medium is adjusted by moving at least one of the first and second inclination members. Image skew of a toner image is sensed, and a photosensitive medium onto which a light beam is scanned is inclined to correspond to a scanning line skew of the light beam.

摘要翻译： 提供了一种用于补偿图像偏斜的方法和装置以及包括其的电子照相图像形成装置。 通过将扫描光束的光敏介质倾斜成平行于光束的扫描线来补偿转印到纸张上的调色剂图像的图像歪斜。 提供包括面向上的第一倾斜表面和包括接触并面对第一倾斜表面的第二倾斜表面的第二倾斜构件的第一倾斜构件，其中通过移动至少一个 第一和第二倾斜构件。 检测到调色剂图像的图像歪斜，并且其上扫描光束的光敏介质倾斜以对应于光束的扫描线歪斜。

公开(公告)号：US07206333B2

公开(公告)日：2007-04-17

申请号：US10410832

申请日：2003-04-09

申请人： Kwon-Hue Choi ,  Soo-Young Kim ,  Kwang-Jae Lim ,  Deock-Gil Oh

发明人： Kwon-Hue Choi ,  Soo-Young Kim ,  Kwang-Jae Lim ,  Deock-Gil Oh

IPC分类号： H04B1/00

CPC分类号： H04L5/026

摘要： Disclosed is a method for using a different symbol timing for users so as to reduce a multiple access interference component in a multi-carrier code division multiple access (MC-CDMA) system. For this purpose, the presented invention involves dividing the users of the MC-CDMA system into two groups and applying an offset to the symbol timing between the user groups to cause a symbol transition of the opposite user group in the middle of the symbol interval, thereby reducing the multiple access interference component included in a symbol decision variable after a chip combination.

摘要翻译： 公开了一种对于用户使用不同的符号定时以减少多载波码分多址（MC-CDMA）系统中的多址干扰分量的方法。 为此，本发明涉及将MC-CDMA系统的用户划分成两组，并将偏移应用于用户组之间的符号定时，以在符号间隔的中间引起相对用户组的符号转换， 从而在芯片组合之后减少包括在符号判定变量中的多址干扰分量。

公开(公告)号：US06365734B1

公开(公告)日：2002-04-02

申请号：US09605635

申请日：2000-06-28

申请人： Kimoon Kim ,  Jaheon Kim ,  In-Sun Jung ,  Soo-Young Kim ,  Eunsung Lee ,  Jin-Koo Kang

发明人： Kimoon Kim ,  Jaheon Kim ,  In-Sun Jung ,  Soo-Young Kim ,  Eunsung Lee ,  Jin-Koo Kang

IPC分类号： C07D24504

CPC分类号： C07D245/04 ,  B01D53/34 ,  B01D53/50 ,  B01D53/56 ,  B01D53/62 ,  B01J31/0237 ,  B01J31/0247 ,  B01J31/0249 ,  B01J31/0251 ,  C02F1/58 ,  C07D487/22 ,  Y02C10/08

摘要： Cucurbituril derivatives, their preparation methods and uses. The cucurbituril derivatives have the formula (1) where X is O, S or NH; R1 and R2 are independently selected from the group consisting of hydrogen, alkyl groups of 1 to 30 carbon atoms, alkenyl groups of 1 to 30 carbon atoms, alkynyl groups of 1 to 30 carbon atoms, alkylthio groups of 1 to 30 carbon atoms, alkylcarboxyl groups of 1 to 30 carbon atoms, hydroxyalkyl groups of 1 to 30 carbon atoms, alkylsilyl groups of 1 to 30 carbon atoms, alkoxy groups of 1 to 30 carbon atoms, haloalkyl groups of 1 to 30 carbon atoms, nitro group, alkylamine groups of 1 to 30 carbon atoms, amine group, aminoalkyl groups of 1 to 30 carbon atoms, unsubstituted cycloalkyl groups of 5 to 30 carbon atoms, cycloalkyl groups of 4 to 30 carbon atoms with hetero atoms, unsubstituted aryl groups of 6 to 30 carbon atoms, and aryl groups of 6 to 30 carbon atoms with hetero atoms; and n is an integer from 4 to 20, wherein the cucurbituril derivatives having the formula (1), where n=6, R1=H, R2=H and X=O, and n=5, R1=CH3, R2=H and X=O, are excluded. The cucurbituril derivatives are easily prepared as a mixture by one of the three new methods, and each cucurbituril derivative can be separated from the mixture by fractional crystallization. The cucurbituril derivatives having the formula (1) or their mixtures are very useful in removing dyes and heavy metal ions dissolved in water or waste water.

摘要翻译： 葫芦素衍生物，其制备方法和用途。 葫芦巴衍生物具有式（1）其中X是O，S或NH; R1和R2独立地选自氢，1〜30个碳原子的烷基，1〜30个碳原子的烯基，1〜30个碳原子的炔基，1〜30个碳原子的烷硫基，烷基羧基 1〜30个碳原子的基团，1〜30个碳原子的羟基烷基，1〜30个碳原子的烷基甲硅烷基，1〜30个碳原子的烷氧基，1〜30个碳原子的卤代烷基，硝基， 1至30个碳原子，胺基，1至30个碳原子的氨基烷基，5至30个碳原子的未取代环烷基，4至30个碳原子的杂原子环烷基，6至30个碳原子的未取代芳基， 和具有6-10个碳原子的杂原子的芳基; n为4〜20的整数，式中，n = 6，R1 = H，R2 = H，X = O，n = 5，R1 = CH3，R2 = H的葫芦巴脲衍生物 和X = O。 通过三种新方法之一容易地制备葫芦巴脲衍生物作为混合物，并且可以通过分级结晶从混合物中分离出每种葫芦巴脲衍生物。 具有式（1）的葫芦巴衍生物或其混合物非常适用于去除溶于水或废水中的染料和重金属离子。

公开(公告)号：US09053936B2

公开(公告)日：2015-06-09

申请号：US13613976

申请日：2012-09-13

申请人： Soo-Young Kim ,  Jong-Hak Won

发明人： Soo-Young Kim ,  Jong-Hak Won

IPC分类号： H01L27/02 ,  H01L27/06

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： A method for forming a unit layout pattern includes: forming first through third active regions in the unit layout pattern, each of the first through third active regions aligning and extending along a length in a first direction and having a width in a second direction perpendicular to the first direction; forming first and second gate regions on the first and second active regions, the first and second gate regions electrically connected to each other; forming the first active region of a first conductive type within a second conductive type well region; forming the second active region of a second conductive type; and forming the third active region connected with the first and second gate regions to form a junction diode, the third active region being located between the first or the second active region and an end of the length in the first direction of the unit pattern.

摘要翻译： 一种用于形成单元布局图案的方法包括：以单元布局图案形成第一至第三有源区域，第一至第三有源区域中的每一个沿着第一方向的长度对准并延伸，并且具有垂直于第一方向的第二方向的宽度 第一个方向 在所述第一和第二有源区上形成第一和第二栅极区，所述第一和第二栅极区彼此电连接; 在第二导电类型阱区内形成第一导电类型的第一有源区; 形成第二导电类型的第二有源区; 以及形成与所述第一和第二栅极区域连接以形成结二极管的所述第三有源区，所述第三有源区位于所述第一或第二有源区之间，并且位于所述单位图案的所述第一方向上的长度的端部。

公开(公告)号：US20130011982A1

公开(公告)日：2013-01-10

申请号：US13613976

申请日：2012-09-13

申请人： Soo-Young Kim ,  Jong-Hak Won

发明人： Soo-Young Kim ,  Jong-Hak Won

IPC分类号： H01L21/8234

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： A layout method of junction diodes for preventing damage caused by plasma charge includes forming an active layer to form a plurality of active regions in a unit layout pattern; forming a gate layer to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions to form a junction diode in at least one active region between the first and second conductive type active regions.

摘要翻译： 用于防止由等离子体电荷引起的损坏的结二极管的布局方法包括：以单元布局图形形成有源层以形成多个有源区; 形成栅极层以在所述有源区上形成多个栅极区; 在阱层内的多个有源区域中的至少一个中形成第一导电型掺杂区，其中形成第二导电类型阱区以形成第一导电型有源区; 在所述第二导电类型阱区域外的所述多个有源区域中的至少一个中形成第二导电型掺杂区域，以形成第二导电型有源区域; 以及形成与所述栅极区域连接的第二导电型掺杂区域，以在所述第一和第二导电型有源区域之间的至少一个有源区域中形成结二极管。

公开(公告)号：US20120314597A1

公开(公告)日：2012-12-13

申请号：US13491243

申请日：2012-06-07

申请人： Harkirat Singh ,  Soo-Young Kim ,  Jonghwa Kim ,  SeungHwan Kim ,  Ilju Na ,  Jae Min Lee ,  Chiu Ngo

发明人： Harkirat Singh ,  Soo-Young Kim ,  Jonghwa Kim ,  SeungHwan Kim ,  Ilju Na ,  Jae Min Lee ,  Chiu Ngo

IPC分类号： H04L12/28 ,  H04L12/26

CPC分类号： H04L41/0686 ,  H04L43/0882 ,  H04L65/1069 ,  H04L65/80

摘要： An enhanced stream reservation protocol comprising a Talker device sending a Stream Reservation Protocol (SRP) Talker Advertise message for streaming data to a Listener device, receiving the Talker Advertise message and checking bandwidth availability on an output port thereof for the streaming. In case of insufficient communication bandwidth, sending a failure message that includes information about available bandwidth from the Talker device to the Listener device. A protocol for communication in a bridged network, comprising a Talker device sending an SRP Talker Advertise message for streaming data to a Listener device. The Talker Advertise message includes communication path information from the Talker device to the Listener device. A communication path from the Talker device to the Listener device is selected based on said path metrics, for streaming data between the Talker device and the Listener device.

摘要翻译： 一种增强型流预留协议，包括一个发送器发送用于流式传输数据到监听器设备的流预留协议（SRP）通话者广告消息的通话器装置，接收该通话器广告消息并检查其输出端口上的带宽可用性。 在通信带宽不足的情况下，发送包含有关可用带宽从Talker设备到监听器设备的信息的故障消息。 一种用于在桥接网络中进行通信的协议，包括发话器设备发送用于将数据流传送到监听器设备的SRP Talker Advertise消息。 Talker Advertise消息包括从Talker设备到监听器设备的通信路径信息。 基于所述路径度量来选择从Talker设备到监听器设备的通信路径，用于在Talker设备和监听器设备之间传输数据。

公开(公告)号：US08288223B2

公开(公告)日：2012-10-16

申请号：US13364362

申请日：2012-02-02

申请人： Soo-Young Kim ,  Jong-Hak Won

发明人： Soo-Young Kim ,  Jong-Hak Won

IPC分类号： H01L21/8234

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： A layout method of junction diodes for preventing damage caused by plasma charge includes forming an active layer to form a plurality of active regions in a unit layout pattern; forming a gate layer to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions to form a junction diode in at least one active region between the first and second conductive type active regions.

摘要翻译： 用于防止由等离子体电荷引起的损坏的结二极管的布局方法包括：以单元布局图形形成有源层以形成多个有源区; 形成栅极层以在所述有源区上形成多个栅极区; 在阱层内的多个有源区域中的至少一个中形成第一导电型掺杂区，其中形成第二导电类型阱区以形成第一导电型有源区; 在所述第二导电类型阱区域外的所述多个有源区域中的至少一个中形成第二导电型掺杂区域，以形成第二导电型有源区域; 以及形成与所述栅极区域连接的第二导电型掺杂区域，以在所述第一和第二导电型有源区域之间的至少一个有源区域中形成结二极管。

公开(公告)号：US20120149160A1

公开(公告)日：2012-06-14

申请号：US13364362

申请日：2012-02-02

申请人： Soo-Young Kim ,  Jong-Hak Won

发明人： Soo-Young Kim ,  Jong-Hak Won

IPC分类号： H01L21/336

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： A layout method of junction diodes for preventing damage caused by plasma charge includes forming an active layer to form a plurality of active regions in a unit layout pattern; forming a gate layer to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions to form a junction diode in at least one active region between the first and second conductive type active regions.

摘要翻译： 用于防止由等离子体电荷引起的损坏的结二极管的布局方法包括：以单元布局图形形成有源层以形成多个有源区; 形成栅极层以在所述有源区上形成多个栅极区; 在阱层内的多个有源区域中的至少一个中形成第一导电型掺杂区，其中形成第二导电类型阱区以形成第一导电型有源区; 在所述第二导电类型阱区域外部的所述多个有源区域中的至少一个中形成第二导电型掺杂区域，以形成第二导电型有源区域; 以及形成与所述栅极区域连接的第二导电型掺杂区域，以在所述第一和第二导电型有源区域之间的至少一个有源区域中形成结二极管。