公开(公告)号：US09000466B1

公开(公告)日：2015-04-07

申请号：US13781633

申请日：2013-02-28

Applicant: Soraa, Inc.

Inventor： Rafael Aldaz ,  Aurelien David ,  Daniel F. Feezell ,  Thomas M. Katona ,  Rajat Sharma

IPC: H01L33/22 ,  H01L33/20 ,  H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/48

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/18 ,  H01L33/32 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0083

Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。

公开(公告)号：US09076926B2

公开(公告)日：2015-07-07

申请号：US14181386

申请日：2014-02-14

Applicant: SORAA, INC.

Inventor： Max Batres ,  Aurelien David

IPC: H01L29/15 ,  H01L33/24 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32

Abstract: Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described.

Abstract translation: 描述了用于制造光学器件的技术，例如使用厚镓和氮的衬底构件的分离工艺的发光二极管（LED）。