-
公开(公告)号：US09520695B2
公开(公告)日：2016-12-13
申请号：US14480398
申请日：2014-09-08
Applicant: Soraa Laser Diode, Inc.
Inventor： Po Shan Hsu , Melvin McLaurin , James W. Raring , Alexander Stzein , Benyamin Buller
CPC classification number: H01S5/34333 , H01S5/0202 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/22 , H01S2304/00
Abstract: In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.
Abstract translation: 在一个实例中，本发明提供一种制造激光二极管器件的方法。 该方法包括提供包含表面区域，覆盖表面区域的剥离材料，含n型镓和氮的材料的含镓和氮的衬底构件; 覆盖n型含镓和氮的材料的有源区，p型含镓和氮的材料; 以及覆盖所述p型含镓和氮的材料的第一透明导电氧化物材料以及覆盖所述第一透明导电氧化物材料的界面区域。 该方法包括将界面区域粘合到手柄基板上，并将释放材料经受能量源以引发含镓和氮的衬底构件的释放。
-
2.发明申请公开(公告)号：US20150111325A1
公开(公告)日：2015-04-23
申请号：US14480398
申请日：2014-09-08
Applicant: Soraa Laser Diode, Inc.
Inventor： Po Shan Hsu , Melvin McLaurin , James W. Raring , Alexander Stzein , Benyamin Buller
IPC: H01S5/028
CPC classification number: H01S5/34333 , H01S5/0202 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/22 , H01S2304/00
Abstract: In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.
Abstract translation: 在一个实例中，本发明提供一种制造激光二极管器件的方法。 该方法包括提供包含表面区域，覆盖表面区域的剥离材料，含n型镓和氮的材料的含镓和氮的衬底构件; 覆盖n型含镓和氮的材料的有源区，p型含镓和氮的材料; 以及覆盖所述p型含镓和氮的材料的第一透明导电氧化物材料以及覆盖所述第一透明导电氧化物材料的界面区域。 该方法包括将界面区域结合到手柄基板上，并将释放材料经受能量源以引发含镓和氮的衬底构件的释放。
-
3.发明申请公开(公告)号：US20170077677A1
公开(公告)日：2017-03-16
申请号：US15356302
申请日：2016-11-18
Applicant: Soraa Laser Diode, Inc.
Inventor： Po Shan Hsu , Melvin McLaurin , James W. Raring , Alexander Sztein , Benyamin Buller
CPC classification number: H01S5/34333 , H01S5/0202 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/22 , H01S2304/00
Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.
Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域的含镓和氮的衬底构件，形成覆盖表面区域的图案化电介质材料，以露出图案化电介质的凹陷区域附近的表面区域的一部分 材料并且保持图案化电介质材料的上部覆盖在表面区域的被覆部分上，并且执行覆盖在表面区域的暴露部分上的横向外延生长以填充凹陷区域并且形成横向外延生长的厚度 覆盖图案化电介质材料的上部。 该方法还包括形成n型含镓和氮的材料，形成有源区，并形成p型含镓和氮的材料。 该方法还包括在p型含镓和氮的材料中形成波导结构。
-
公开(公告)号：US09882353B2
公开(公告)日：2018-01-30
申请号：US15356302
申请日：2016-11-18
Applicant: Soraa Laser Diode, Inc.
Inventor： Po Shan Hsu , Melvin McLaurin , James W. Raring , Alexander Sztein , Benyamin Buller
CPC classification number: H01S5/34333 , H01S5/0202 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/22 , H01S2304/00
Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.
-
-
-
Search Results
4
records
(took 0.016 seconds)
