公开(公告)号：US5296716A

公开(公告)日：1994-03-22

申请号：US747053

申请日：1991-08-19

申请人： Stanford R. Ovshinsky ,  Wolodymyr Czubatyj ,  Quiyi Ye ,  David A. Strand ,  Stephen J. Hudgens

发明人： Stanford R. Ovshinsky ,  Wolodymyr Czubatyj ,  Quiyi Ye ,  David A. Strand ,  Stephen J. Hudgens

IPC分类号： H01L27/10 ,  G11C11/56 ,  G11C16/02 ,  H01H45/00 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L27/24 ,  H01L29/788 ,  H01L29/792 ,  H01L45/00

CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/115 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675 ,  G11C13/04

摘要： A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.

摘要翻译： 基于由独特类型的半导体材料提供的独特配置提供的现象学新颖的电开关特性的固态，直接可重写，电子，非易失性，高密度，低成本，低能量，高速度，易于制造的多位单电池存储器 ，哪个存储器在显着降低的能量水平下显示出高数量级的开关速度。 特别地，本发明的新颖记忆特征在于由局部原子和/或电子顺序的许多稳定和真正的非易失性可检测配置，其可以通过变化的脉冲电压和持续时间的电输入信号来选择性地和重复地访问。

公开(公告)号：US5596522A

公开(公告)日：1997-01-21

申请号：US510400

申请日：1995-08-02

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David Strand ,  Wolodymyr Czubatyj ,  Jesus Gonzalez-Hernandez ,  Hellmut Fritzsche ,  Quiyi Ye ,  Sergey A. Kostylev ,  Benjamin S. Chao

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David Strand ,  Wolodymyr Czubatyj ,  Jesus Gonzalez-Hernandez ,  Hellmut Fritzsche ,  Quiyi Ye ,  Sergey A. Kostylev ,  Benjamin S. Chao

IPC分类号： G11C11/56 ,  G11C16/02 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C11/56 ,  C01B19/007 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  G11C13/04 ,  G11C2213/72

摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

摘要翻译： 一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被 删除。 基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中 存储器在显着降低的能量水平下显示出高数量级的开关速度。 特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。