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1.发明授权Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效微晶半导体材料，半导体器件和由其制造的直接可重写存储器元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5596522A
公开(公告)日：1997-01-21
申请号：US510400
申请日：1995-08-02
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
CPC分类号： G11C11/56 , C01B19/007 , G11C11/5678 , G11C13/0004 , H01L27/2409 , H01L27/2463 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译： 一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被 删除。 基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中 存储器在显着降低的能量水平下显示出高数量级的开关速度。 特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。
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2.发明授权Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效微晶半导体材料，半导体器件和由其制造的直接可重写存储元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5335219A
公开(公告)日：1994-08-02
申请号：US768139
申请日：1991-09-30
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： H01L27/10 , G11C11/56 , G11C16/02 , H01H45/00 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/24 , H01L29/788 , H01L29/792 , H01L45/00 , G11C13/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/115 , G11C13/04
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译： 一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被 删除。 基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中 存储器在显着降低的能量水平下显示出高数量级的开关速度。 特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。
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公开(公告)号：US07407829B2
公开(公告)日：2008-08-05
申请号：US10799265
申请日：2004-03-12
申请人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
发明人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
IPC分类号： H01L21/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.
摘要翻译： 一种制造电可编程存储元件的方法，包括：提供第一介电层; 在所述第一介电层上形成导电材料; 在所述导电材料上形成第二电介质层; 以及形成与导电材料的外围表面电接触的可编程电阻材料。
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公开(公告)号：US20090057645A1
公开(公告)日：2009-03-05
申请号：US12290353
申请日：2008-10-30
申请人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L45/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
摘要翻译： 一种相变存储元件，包括相变存储器材料，第一电触头和第二电触头。 电触点中的至少一个具有电耦合到存储器材料的侧壁。
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公开(公告)号：US06969866B1
公开(公告)日：2005-11-29
申请号：US09276273
申请日：1999-03-25
申请人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
发明人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.
摘要翻译： 一种存储器元件，包括一定量的相变存储器材料; 以及用于向存储器材料提供电信号的第一和第二触点，其中第一触点包括导电侧壁间隔物。 或者，第一接触可以包括具有与存储材料相邻的边缘的接触层。
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公开(公告)号：US07473574B2
公开(公告)日：2009-01-06
申请号：US11394433
申请日：2006-04-01
申请人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
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公开(公告)号：US20080273372A1
公开(公告)日：2008-11-06
申请号：US12178148
申请日：2008-07-23
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.
摘要翻译： 一种编程多层硫族化物电子器件的方法。 该器件包括与两个端子电连通的有源区域，其中有源区域包括两层或更多层。 该方法包括在两个终端之间提供电信号，其中电信号改变远离一个终端的层的电特性。 在一个实施例中，远离终端的层是硫族化物材料，并且电特性是电阻。 在另一个实施例中，与终端接触的层的电特性也被改变。 电特性的改变可能是由硫族化物材料从一种结构状态转变为另一种结构状态引起的。
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8.发明授权Reading phase change memories without triggering reset cell threshold devices 有权读取相位改变存储器，而不触发复位单元阈值器件公开(公告)号：US07280390B2
公开(公告)日：2007-10-09
申请号：US11105829
申请日：2005-04-14
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/0033 , G11C2013/0054
摘要： A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a displacement current which may convert a reset device to a set device. By ensuring that the reset cell never reaches a voltage that would result in triggering of the threshold device, read disturbs may be reduced.
摘要翻译： 可以读取相变存储器，以便减少读取干扰的可能性。 例如，当复位装置升高到电压时，可能会发生读取干扰，导致其阈值装置触发。 阈值装置的触发产生位移电流，其可以将复位装置转换成集装置。 通过确保复位单元不会达到会导致阈值器件触发的电压，可能会降低读取干扰。
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公开(公告)号：US06872963B2
公开(公告)日：2005-03-29
申请号：US10215315
申请日：2002-08-08
CPC分类号： H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A programmable resistance memory element comprising alternating layers of programmable resistance material layers and stabilizing layers. The stabilizing layers may include metallic titanium or a titanium alloy. The stabilizing layers may include a telluride, such as titanium telluride.
摘要翻译： 一种可编程电阻存储元件，包括可编程电阻材料层和稳定层的交替层。 稳定层可以包括金属钛或钛合金。 稳定层可以包括碲化物，例如碲化碲。
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10.发明授权公开(公告)号：US07459762B2
公开(公告)日：2008-12-02
申请号：US11339868
申请日：2006-01-26
IPC分类号： H01L29/86
CPC分类号： H01L45/04 , H01L45/00 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.
摘要翻译： 一种可编程电阻存储元件，包括在可编程电阻存储器材料和阈值开关材料之间的介电材料。
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