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公开(公告)号：US07777599B2
公开(公告)日：2010-08-17
申请号：US11934197
申请日：2007-11-02
申请人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miller , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
发明人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miller , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
CPC分类号： H05H1/0081 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
摘要翻译： 本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。 在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。
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公开(公告)号：US20090140828A1
公开(公告)日：2009-06-04
申请号：US11934197
申请日：2007-11-02
申请人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miler , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
发明人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miler , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
IPC分类号： H01P7/04
CPC分类号： H05H1/0081 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
摘要翻译： 本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。 在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。
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3.发明申请PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR 有权具有等离子体负载阻抗的等离子体反应器通过同步电源或偏置功率射频发生器的同步调制进行工程过程公开(公告)号：US20090294062A1
公开(公告)日：2009-12-03
申请号：US12128963
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23C16/505 , C23F1/02
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/32183
摘要： In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
摘要翻译： 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。
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4.发明授权Method of plasma load impedance tuning by modulation of an unmatched low power RF generator 有权通过调制不匹配的低功率RF发生器的等离子体负载阻抗调谐方法公开(公告)号：US07967944B2
公开(公告)日：2011-06-28
申请号：US12129244
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23F1/00
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32146 , H01J37/32174 , H01J37/32935
摘要： A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.
摘要翻译： 通过根据在RF源或偏置功率发生器处感测的RF参数确定负载阻抗的变化并将负载阻抗的变化解析成其第一和第二分量，在等离子体反应器室中使用稳定的RF功率来处理工件， 并且将稳定化RF功率的功率电平作为负载阻抗变化的组成部分之一变化。
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5.发明申请PLASMA REACTOR WITH HIGH SPEED PLASMA IMPEDANCE TUNING BY MODULATION OF SOURCE POWER OR BIAS POWER 审中-公开具有高速等离子体阻抗调节的等离子体反应器通过调节源功率或偏置功率公开(公告)号：US20090297404A1
公开(公告)日：2009-12-03
申请号：US12129202
申请日：2008-05-29
申请人： STEVEN C. SHANNON , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： STEVEN C. SHANNON , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： G05D17/00
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32183
摘要： A plasma reactor, having source and bias RF power generators of different frequencies, is provided with a controller responsive to fluctuations in plasma load impedance measured at one of the generators to modulate the output of the other generator to compensate for the fluctuations.
摘要翻译： 具有不同频率的源极和偏置RF功率发生器的等离子体反应器设置有响应于在一个发生器处测量的等离子体负载阻抗的波动的控制器，以调制另一发生器的输出以补偿波动。
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6.发明申请METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR 有权等离子体负载阻抗调制方法通过调制低功率射频发生器公开(公告)号：US20090295296A1
公开(公告)日：2009-12-03
申请号：US12129244
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： H05H1/00
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32146 , H01J37/32174 , H01J37/32935
摘要： A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.
摘要翻译： 通过根据在RF源或偏置功率发生器处感测的RF参数确定负载阻抗的变化并将负载阻抗的变化解析成其第一和第二分量，在等离子体反应器室中使用稳定的RF功率来处理工件， 并且将稳定化RF功率的功率电平作为负载阻抗变化的组成部分之一变化。
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7.发明申请PLASMA REACTOR WITH HIGH SPEED PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF DIFFERENT UNMATCHED FREQUENCY SOURCES 有权具有高速等离子体负载阻抗调节的等离子体反应器通过不同调制频率源的调制公开(公告)号：US20090295295A1
公开(公告)日：2009-12-03
申请号：US12129155
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： H05H1/00
CPC分类号： H05H1/36 , H01J37/32082 , H01J37/32183 , H01J37/32935 , H05H1/46
摘要： Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.
摘要翻译： 等离子体特性如负载阻抗的波动由控制器补偿，该控制器调制耦合到具有适于稳定等离子体特性的频率的等离子体的稳定RF发生器，控制器响应于等离子体特性的波动。
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8.发明授权Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator 有权等离子体反应器，通过源功率或偏置功率RF发生器的同步调制实现等离子体负载阻抗调谐公开(公告)号：US08357264B2
公开(公告)日：2013-01-22
申请号：US12128963
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/32183
摘要： In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
摘要翻译： 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。
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9.发明授权Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator 有权等离子体反应器，通过同步调制无与伦比的低功率射频发生器，实现等离子体负载阻抗调谐，实现工程瞬变公开(公告)号：US08337661B2
公开(公告)日：2012-12-25
申请号：US12128926
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/32183
摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
摘要翻译： 使用等离子体偏置功率或等离子体源功率的预定瞬变来处理诸如半导体晶片的工件的等离子体反应器具有与瞬变同步的无与伦比的低功率RF发生器，以使等离子体特性的瞬变诱发变化最小化。
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10.发明授权Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources 有权等离子体电抗器采用高速等离子体负载阻抗调谐，调谐不同的不匹配频率源公开(公告)号：US08018164B2
公开(公告)日：2011-09-13
申请号：US12129155
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： H01J7/24
CPC分类号： H05H1/36 , H01J37/32082 , H01J37/32183 , H01J37/32935 , H05H1/46
摘要： Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.
摘要翻译： 诸如负载阻抗的等离子体特性的波动由控制器补偿，该控制器调制耦合到具有适于稳定等离子体特性的频率的等离子体的稳定RF发生器，控制器响应于等离子体特性的波动。
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