摘要:
A method of generating and verifying a memory test is disclosed. A simulator is used to verify that the sequence of time-ordered commands complies with a set of operating constraints for the memory. A packer may thereafter be used to optimize run time of the verified test.
摘要:
A method of generating and verifying a memory test is disclosed. A simulator is used to verify that the sequence of time-ordered commands complies with a set of operating constraints for the memory. A packer may thereafter be used to optimize run time of the verified test.
摘要:
The present invention provides a high data bandwidth memory system capable of operating in non-chip-kill and chip-kill modes. In chip-kill mode, cycle multiplexing, bit multiplexing, and time and space multiplexing are used to read/write data and syndrome across a group of memory devices. Current command packet formats are adapted to communicate with the group of memory devices in chip-kill mode.
摘要:
A high-speed memory system is disclosed in which a single command effects control over either a single memory device or a plurality of memory devices depending on a present mode of operation. Such control may effect data transfer between the one or more memory devices and a memory controller, as well as operating state transitions or power mode transitions for the memory devices. Similarly, various configurations of relatively low bandwidth memory devices respond as a selectively controllable group to transmit or receive high bandwidth data.
摘要:
A high-speed memory system is disclosed in which a single command effects control over either a single memory device or a plurality of memory devices depending on a present mode of operation. Such control may effect data transfer between the one or more memory devices and a memory controller, as well as operating state transitions or power mode transitions for the memory devices. Similarly, various configurations of relatively low bandwidth memory devices respond as a selectively controllable group to transmit or receive high bandwidth data.
摘要:
A memory module includes an array of N memory devices, each memory device having M data pins, where N is greater than M, and M and N are positive integers; and N bit lines traversing the array of N memory devices, such that each one of the N bit lines is connected to M of the N memory devices.