公开(公告)号：US5218321A

公开(公告)日：1993-06-08

申请号：US717347

申请日：1991-06-18

Applicant: Steven R. Jost

Inventor： Steven R. Jost

IPC: G01S7/03 ,  H03F3/30 ,  H04N5/14

CPC classification number: G01S7/03 ,  H03F3/3076 ,  H04N5/148

Abstract: A buffer amplifier configuration simultaneously reduces d.c. voltage offsets through the signal flow path between its input and output and maintains a high input impedance and a low output impedance. In a preferred embodiment, high input impedance is achieved by coupling the input transistor's collector to a high impedance current source, which is coupled to one of the buffer's power supply rails. The emitter of the input transistor is coupled to the input terminal and its base of the base of a like polarity bipolar output transistor, the emitter of which is coupled to an output terminal and the collector of which is coupled to one supply rail. Since both the input and output transistors are of the same polarity type (so that they can be reasonably well matched during manufacture) and have their base-emitter junctions connected back-to-back between the input and output terminals, they impart effectively no Vbe-based d.c. offset voltage through the buffer. To ensure a high input impedance regardless of output load and output stage gain an isolating emitter-follower transistor stage is preferably coupled between the collector of the input transistor stage and the base of the output transistor stage.

Abstract translation: 缓冲放大器配置同时减少直流 电压通过其输入和输出之间的信号流动路径偏移，并保持高输入阻抗和低输出阻抗。 在优选实施例中，通过将输入晶体管的集电极耦合到高阻抗电流源来实现高输入阻抗，高阻抗电流源耦合到缓冲器的电源轨之一。 输入晶体管的发射极耦合到输入端及其基极的相当极性双极性输出晶体管的基极，其发射极耦合到输出端子，其集电极耦合到一个电源轨。 由于输入和输出晶体管都具有相同的极性类型（使得它们在制造期间可以相当好地匹配），并且它们的基极 - 发射极结在输入和输出端子之间背靠背连接，所以它们无效地赋予Vbe 基于直流 通过缓冲器补偿电压。 为了确保高输入阻抗，无论输出负载和输出级增益如何，隔离发射极跟随器晶体管级优选地耦合在输入晶体管级的集电极和输出晶体管级的基极之间。

公开(公告)号：US20110168996A1

公开(公告)日：2011-07-14

申请号：US11607179

申请日：2006-12-01

Applicant: Steven R. Jost ,  Danny J. Reese

Inventor： Steven R. Jost ,  Danny J. Reese

IPC: H01L31/0368

CPC classification number: H01L31/0216 ,  H01L31/0324 ,  H01L31/09

Abstract: A midwave infrared lead salt photodetector manufactured by a process comprising the step of employing molecular beam epitaxy (MBE) to grow a heterostructure photoconductive detector with a wide-gap surface layer that creates a surface channel for minority carriers.

Abstract translation: 一种中波红外线铅盐光电探测器，其制造方法包括采用分子束外延（MBE）的步骤，以形成具有宽间隙表面层的异质结构光电导检测器，其形成少数载流子的表面通道。

公开(公告)号：US08178843B2

公开(公告)日：2012-05-15

申请号：US11607179

申请日：2006-12-01

Applicant: Steven R. Jost ,  Danny J. Reese

Inventor： Steven R. Jost ,  Danny J. Reese

IPC: H01L31/0368

CPC classification number: H01L31/0216 ,  H01L31/0324 ,  H01L31/09

Abstract: A midwave infrared lead salt photodetector manufactured by a process comprising the step of employing molecular beam epitaxy (MBE) to grow a heterostructure photoconductive detector with a wide-gap surface layer that creates a surface channel for minority carriers.

Abstract translation: 一种中波红外线铅盐光电探测器，其制造方法包括采用分子束外延（MBE）的步骤，以形成具有宽间隙表面层的异质结构光电导检测器，其形成少数载流子的表面通道。

公开(公告)号：US07611920B1

公开(公告)日：2009-11-03

申请号：US11601223

申请日：2006-11-17

Applicant: Steven R. Jost

Inventor： Steven R. Jost

IPC: H01L21/20

CPC classification number: H01L31/0324 ,  B82Y20/00 ,  G01J1/0407 ,  G02B6/1225 ,  H01L31/0352 ,  H01L31/1037

Abstract: A room temperature operation polycrystalline infrared responsive photodetector, manufactured by a process, comprising the steps of patterning vacuum-deposited material and dry-etching a photonic crystal structure with resonant coupling tuned to long wavelengths.

Abstract translation: 通过工艺制造的室温操作多晶红外响应光电检测器，包括以下步骤：将真空沉积材料图案化并用调谐到长波长的谐振耦合的光子晶体结构进行干蚀刻。

公开(公告)号：US4206979A

公开(公告)日：1980-06-10

申请号：US919471

申请日：1978-06-27

Applicant: Steven R. Jost

Inventor： Steven R. Jost

IPC: G02F1/135 ,  G02F1/13

CPC classification number: G02F1/1354 ,  Y10S359/90

Abstract: A multi-heterojunction of one type of photoconductive layer with another type of photoconductive layer to provide back-to-back modulators using illumination to decrease a potential barrier for current flow and increase voltage drop across an electro-optic device therewith associated in reproduction of an image thereby.

Abstract translation: 一种类型的光电导层与另一种类型的光电导层的多异质结，以提供使用照明的背靠背调制器，以减少电流的电位势垒，并增加电光装置上的电压降，这与其相关联的电光装置相关联 形象。

公开(公告)号：US4442446A

公开(公告)日：1984-04-10

申请号：US358941

申请日：1982-03-17

Applicant: Alan C. Bouley ,  Harold R. Riedl ,  James D. Jensen ,  Steven R. Jost

Inventor： Alan C. Bouley ,  Harold R. Riedl ,  James D. Jensen ,  Steven R. Jost

IPC: H01L31/032 ,  H01L31/108 ,  H01L27/14 ,  H01L23/48 ,  H01L29/167 ,  H01L33/00

CPC classification number: H01L31/108 ,  H01L31/0324

Abstract: An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically insulating material, an Ohmic contact deposited on the epitaxial layer, and a non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material.

Abstract translation: 红外线敏感光电二极管，由半导体合金的外延层制成，该半导体合金是在红外线透明电绝缘材料的单晶基板上生长的铅硫族化物，铅锡硫属元素化物或铅镉硫族化物，欧姆 并且沉积在外延层上的非欧姆铅金属接触层形成肖特基势垒，其改进包括在非欧姆铅金属接触和外延层之间的界面区域中包含卤离子 的半导体材料。