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1.发明授权Surface passivation of IV-VI semiconductors with As.sub.2 S.sub.3 失效IV-VI半导体的表面钝化与As {hd 2 {b S {HD 3
公开(公告)号：US4126732A
公开(公告)日：1978-11-21
申请号：US825007
申请日：1977-08-16
IPC分类号： H01L21/471 , H01L23/29 , H01L23/31 , H01L29/24 , H01L21/208 , B05D5/12 , H01L21/368
CPC分类号： H01L21/471 , H01L23/29 , H01L23/3107 , H01L29/245 , H01L2924/0002 , Y10S438/958
摘要： The process of coating epitaxial films of lead chalcogenide materials withs.sub.2 S.sub.3 to insulate the films from the effects of oxygen upon exposure to air.
摘要翻译： 用As2S3涂覆铅硫族化物材料的外延膜的过程使膜不受氧气暴露于空气中的影响。
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公开(公告)号：US4822700A
公开(公告)日：1989-04-18
申请号：US185586
申请日：1988-04-22
CPC分类号： H01M4/96 , H01M6/14 , H01M2200/00 , H01M2200/10 , H01M4/62
摘要： Exothermic reactions at elevated temperatures in high rate non-aqueous active metal electrochemical cells which include an alkali metal anode, an electrolyte system including an electrolyte salt dissolved in a non-aqueous solvent depolarizer, by the provision of a reaction limiting positive electrode material which includes an amount of carbon black, an amount of binder and an amount of ceramic material, said ceramic material being substantially unreactive with other cell species below a predetermined temperature but capable of reacting to form substantially inactive products with the metal of the anode material at or above the predetermined temperature.
摘要翻译： 通过提供反应限制性的正极材料，其包括碱金属阳极，包括溶解在非水溶剂去极化剂中的电解质盐的电解质体系的高速非水活性金属电化学电池中的升高温度下的放热反应， 一定量的炭黑，一定量的粘合剂和一定量的陶瓷材料，所述陶瓷材料与预定温度以下的其它细胞种类基本上不反应，但是能够与阳极材料的金属在等于或高于 预定温度。
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公开(公告)号：US4442446A
公开(公告)日：1984-04-10
申请号：US358941
申请日：1982-03-17
IPC分类号： H01L31/032 , H01L31/108 , H01L27/14 , H01L23/48 , H01L29/167 , H01L33/00
CPC分类号： H01L31/108 , H01L31/0324
摘要： An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically insulating material, an Ohmic contact deposited on the epitaxial layer, and a non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material.
摘要翻译： 红外线敏感光电二极管，由半导体合金的外延层制成，该半导体合金是在红外线透明电绝缘材料的单晶基板上生长的铅硫族化物，铅锡硫属元素化物或铅镉硫族化物，欧姆 并且沉积在外延层上的非欧姆铅金属接触层形成肖特基势垒，其改进包括在非欧姆铅金属接触和外延层之间的界面区域中包含卤离子 的半导体材料。
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公开(公告)号：US4371232A
公开(公告)日：1983-02-01
申请号：US143695
申请日：1980-04-25
IPC分类号： C30B23/00 , C30B23/04 , H01L31/032 , H01L31/065 , H01L27/14 , G02B1/02
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50
摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译： 用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中w 变化在零和百分之零零零之间，并且a = 0.500 +/- 0.003），沉积在与同时升华的铅合金和硫族化物源保持接近热力学平衡的氟化钡BaF2的衬底上。 在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。 该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。
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公开(公告)号：US4227948A
公开(公告)日：1980-10-14
申请号：US864417
申请日：1977-12-27
IPC分类号： C30B23/00 , C30B23/04 , H01L21/365 , H01L31/032 , H01L31/04 , H01L31/065 , H01L21/203
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50 , Y10S438/93 , Y10S438/936
摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译： 用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。 在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。 该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。
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公开(公告)号：US4282045A
公开(公告)日：1981-08-04
申请号：US143562
申请日：1980-04-25
IPC分类号： C30B23/00 , C30B23/04 , H01L31/032 , H01L31/065 , H01L29/26 , H01L27/12
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50 , Y10S438/93 , Y10S438/936
摘要： A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译： 用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。 在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。 该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。
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公开(公告)号：US4263604A
公开(公告)日：1981-04-21
申请号：US143694
申请日：1980-04-25
IPC分类号： C30B23/00 , C30B23/04 , H01L31/032 , H01L31/065 , H01L27/14
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50
摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a where w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译： 单相（例如，面心立方），三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的制备的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。 在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。 该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。
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