公开(公告)号：US20090220893A1

公开(公告)日：2009-09-03

申请号：US12041500

申请日：2008-03-03

申请人： Steven Scheer ,  Uwe Paul Schroeder

发明人： Steven Scheer ,  Uwe Paul Schroeder

IPC分类号： G03F7/30 ,  G03F7/26

CPC分类号： H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

摘要： A method for etching a pattern on a surface is disclosed. A mask layer is disposed over a surface and a resist is disposed over the mask layer. The resist is exposed to light through the mask exposing primary pattern and sidelobe regions. The resist is developed and the mask layer is etched according to the resist pattern. A first material is deposited over the mask layer, wherein a gap is formed beneath the material and over the primary pattern region. The material is etched back so that the gap is exposed, and the primary pattern region is etched using the first material as a mask.

摘要翻译： 公开了一种用于蚀刻表面上的图案的方法。 掩模层设置在表面上，并且抗蚀剂设置在掩模层上。 抗蚀剂通过暴露初级图案和旁瓣区域的掩模曝光。 抗蚀剂被显影，并且根据抗蚀剂图案蚀刻掩模层。 第一材料沉积在掩模层上，其中在材料之下和主要图案区域之上形成间隙。 蚀刻材料以使间隙暴露，并且使用第一材料作为掩模蚀刻初级图案区域。

公开(公告)号：US08003305B2

公开(公告)日：2011-08-23

申请号：US12041500

申请日：2008-03-03

申请人： Steven Scheer ,  Uwe Paul Schroeder

发明人： Steven Scheer ,  Uwe Paul Schroeder

IPC分类号： G03F7/26

CPC分类号： H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

摘要： A method for etching a pattern on a surface is disclosed. A mask layer is disposed over a surface and a resist is disposed over the mask layer. The resist is exposed to light through the mask exposing primary pattern and sidelobe regions. The resist is developed and the mask layer is etched according to the resist pattern. A first material is deposited over the mask layer, wherein a gap is formed beneath the material and over the primary pattern region. The material is etched back so that the gap is exposed, and the primary pattern region is etched using the first material as a mask.

摘要翻译： 公开了一种用于蚀刻表面上的图案的方法。 掩模层设置在表面上，并且抗蚀剂设置在掩模层上。 抗蚀剂通过暴露初级图案和旁瓣区域的掩模曝光。 抗蚀剂被显影，并且根据抗蚀剂图案蚀刻掩模层。 第一材料沉积在掩模层上，其中在材料之下和主要图案区域之上形成间隙。 蚀刻材料以使间隙暴露，并且使用第一材料作为掩模蚀刻初级图案区域。

公开(公告)号：US20100301457A1

公开(公告)日：2010-12-02

申请号：US12471695

申请日：2009-05-26

申请人： Uwe Paul Schroeder

发明人： Uwe Paul Schroeder

IPC分类号： H01L23/58 ,  G03F1/00 ,  G03B27/42 ,  G03F7/20

CPC分类号： G03F7/70 ,  G03F1/14 ,  G03F1/144 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70466 ,  H01L21/26

摘要： Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position.

摘要翻译： 公开了平版印刷掩模，光刻系统，光刻掩模的制造方法，改变半导体器件的材料层的方法以及制造半导体器件的方法。 在一个实施例中，光刻掩模包括用于至少一个管芯的至少一个材料层的第一图案，第一图案被定向在第一位置。 光刻掩模包括用于至少一个管芯的至少一个材料层的第二图案，第二图案被定向在第二位置。 第二个位置与第一个位置不同。

公开(公告)号：US20100124820A1

公开(公告)日：2010-05-20

申请号：US12693231

申请日：2010-01-25

申请人： Veit Klee ,  Roman Knoefler ,  Uwe Paul Schroeder

发明人： Veit Klee ,  Roman Knoefler ,  Uwe Paul Schroeder

IPC分类号： H01L21/768

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897

摘要： To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.

摘要翻译： 为了形成半导体器件，在导电区域上形成绝缘层，并且在绝缘层上形成图案转移层。 图案转印层以要形成在绝缘层中的凹槽布局的相反色调被图案化，使得图案转印层保留在要形成凹部的区域上。 掩模材料形成在绝缘层上并与图案转印层对准。 去除图案转印层的剩余部分，并使用掩模材料作为掩模在绝缘层中蚀刻凹陷。

公开(公告)号：US07405024B2

公开(公告)日：2008-07-29

申请号：US10952559

申请日：2004-09-28

申请人： Uwe Paul Schroeder ,  Oliver Broermann

发明人： Uwe Paul Schroeder ,  Oliver Broermann

IPC分类号： G03F1/14

CPC分类号： G03F1/62 ,  G03F1/48

摘要： A lithographic mask having a mask substrate (3) and a patterned mask layer (4) which includes mask structures (5) and can be transferred by lithography to a further substrate is disclosed. With masks of this type, it is customary for a protective layer to be provided in the form of a membrane positioned at a distance from the mask layer (4), in order to keep impurity particles or other impurities away from the focal plane of the mask layer (4). According to the invention, the protective layer (6) is applied in liquid form directly to the mask structures (5) and fills up spaces between the mask structures (4). Then, the protective layer (6), while it is still in the liquid state, is covered with a plane-parallel plate. The continuously dense protective layer (6) which is formed in accordance with the invention is even more reliable in preventing impurity particles or impurities (20) from penetrating into spacers between the structures (5) of the mask layer (4). The impurity particles or impurities (20) can only be deposited on the outer side (16) of the protective layer (6), at a still greater distance from the focal plane.

摘要翻译： 公开了一种具有掩模衬底（3）和包括掩模结构（5）的图案化掩模层（4）并且可以通过光刻转移到另一衬底的光刻掩模。 对于这种类型的掩模，通常保护层以与掩模层（4）相距一定距离的膜的形式提供，以便使杂质颗粒或其它杂质远离所述掩模层（4）的焦平面 掩模层（4）。 根据本发明，保护层（6）以液体形式直接施加到掩模结构（5）并填充掩模结构（4）之间的空间。 然后，保护层（6）仍处于液体状态时被平面平行板覆盖。 根据本发明形成的连续致密保护层（6）在防止杂质颗粒或杂质（20）渗透到掩模层（4）的结构（5）之间的间隔物中是更可靠的。 杂质颗粒或杂质（20）只能在与焦平面更远的距离处沉积在保护层（6）的外侧（16）上。

公开(公告)号：US20080087929A1

公开(公告)日：2008-04-17

申请号：US11545886

申请日：2006-10-11

申请人： Martin Ostermayr ,  Uwe Paul Schroeder

发明人： Martin Ostermayr ,  Uwe Paul Schroeder

IPC分类号： H01L29/94

CPC分类号： H01L27/1104 ,  G11C11/412

摘要： An SRAM includes an SRAM cell with a semiconductor substrate material, and a capacitor. The capacitor includes a first electrode adjacent the substrate material, a thin oxide adjacent the first electrode and a second electrode adjacent the thin oxide.

摘要翻译： SRAM包括具有半导体衬底材料的SRAM单元和电容器。 电容器包括邻近衬底材料的第一电极，与第一电极相邻的薄氧化物和邻近薄氧化物的第二电极。

公开(公告)号：US07268080B2

公开(公告)日：2007-09-11

申请号：US11270400

申请日：2005-11-09

申请人： Uwe Paul Schroeder

发明人： Uwe Paul Schroeder

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76816 ,  Y10S430/151

摘要： A method for printing contacts utilizes photolithographic pattern reversal. A negative of the contact is printed on a resist layer. Unexposed portions of the resist layer are stripped to expose a first layer. The first layer is etched to remove exposed portions of the first layer not covered by the negative of the contact and to expose a second layer. A pattern reversal is performed to cure exposed portions of the second layer not covered by the first layer.

公开(公告)号：US07224030B2

公开(公告)日：2007-05-29

申请号：US10863786

申请日：2004-06-08

申请人： Uwe Paul Schroeder

发明人： Uwe Paul Schroeder

IPC分类号： H01L27/01

CPC分类号： G03F1/32 ,  G03F1/26

摘要： An array of small square contact holes, on the order of magnitude of the exposing light wavelength, are formed by selecting the partial coherence and numerical aperture of the exposing light source and the pitch of the array of windows on an attenuating phase shifting mask so that side lobes formed by the exposing light being diffracted as it passes through the array of window constructively interfere with one another in the vicinity of a desired contact hole on the material surface. This constructive interference of side lobe patterns, in combination with the pattern formed by the light passing undiffracted through the array of windows, forms an array of square exposed regions on the material surface. When the material is a photoresist, the exposed regions can be selectively dissolved in order to form square patterns that can be used to etch square holes in the underlying substrate or layer. In subsequent steps, selected ones of the array of square holes can be filled in with a conductive material to form vias and selected others of the square holes can be filled in with an insulating material so as to avoid the formation of unintended vias or conducting paths.

摘要翻译： 通过在衰减的相移掩模上选择曝光光源的部分相干和数值孔径以及窗口阵列的间距，形成曝光光波长数量级的小方形接触孔阵列，使得 当通过窗口阵列时由被衍射的曝光所形成的旁瓣在材料表面上期望的接触孔附近相互干扰。 旁瓣图案的这种结构性干扰与通过未折射通过窗阵列的光形成的图案组合在材料表面上形成方阵曝光区域的阵列。 当材料是光致抗蚀剂时，可以选择性地溶解暴露的区域以形成可用于蚀刻下面的衬底或层中的方形孔的正方形图案。 在随后的步骤中，可以用导电材料填充方孔阵列中的选定的方孔以形成通孔，并且可以用绝缘材料填充所选择的其他方孔，以避免形成非预期的通孔或导电路径 。

公开(公告)号：US06379869B1

公开(公告)日：2002-04-30

申请号：US09282745

申请日：1999-03-31

申请人： Uwe Paul Schroeder ,  Gerhard Kunkel ,  Alois Gutmann ,  Bruno Spuler

发明人： Uwe Paul Schroeder ,  Gerhard Kunkel ,  Alois Gutmann ,  Bruno Spuler

IPC分类号： G03F700

CPC分类号： G03F7/405

摘要： A photoresist system is provided that is easily structurable and is suitable for deep ultraviolet range patterning. An increased etching resistance to oxygen-containing plasma is produced in a lithographically generated photoresist structure by treatment with an etch protectant. The etch protectant includes a silylating agent for chemical reaction with reactive groups of the photoresist. In an embodiment, the photoresist includes a base resin initially containing no aromatic groups. Silylating agents include silicon tetrachloride, silicon tetrafluoride, trichlorosilane, dimethylchlorosilane and hexamethyldisilazane.

摘要翻译： 提供光致抗蚀剂系统，其易于结构化并且适用于深紫外范围图案化。 通过用蚀刻保护剂处理，在光刻产生的光致抗蚀剂结构中产生对含氧等离子体的增加的耐蚀刻性。 蚀刻保护剂包括用于与光致抗蚀剂的反应性基团进行化学反应的甲硅烷化剂。 在一个实施方案中，光致抗蚀剂包括最初不含芳族基团的基础树脂。 硅烷化剂包括四氯化硅，四氟化硅，三氯硅烷，二甲基氯硅烷和六甲基二硅氮烷。

公开(公告)号：US07985676B2

公开(公告)日：2011-07-26

申请号：US12693231

申请日：2010-01-25

申请人： Veit Klee ,  Roman Knoefler ,  Uwe Paul Schroeder

发明人： Veit Klee ,  Roman Knoefler ,  Uwe Paul Schroeder

IPC分类号： H01L21/4763

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897

摘要： To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.

摘要翻译： 为了形成半导体器件，在导电区域上形成绝缘层，并且在绝缘层上形成图案转移层。 图案转印层以要形成在绝缘层中的凹槽布局的相反色调被图案化，使得图案转印层保留在要形成凹部的区域上。 掩模材料形成在绝缘层上并与图案转印层对准。 去除图案转印层的剩余部分，并使用掩模材料作为掩模在绝缘层中蚀刻凹陷。