Fast access memory architecture
    1.
    发明授权
    Fast access memory architecture 有权
    快速访问内存架构

    公开(公告)号:US07376038B2

    公开(公告)日:2008-05-20

    申请号:US11385151

    申请日:2006-03-21

    IPC分类号: G11C5/14

    CPC分类号: G11C8/10

    摘要: A computer system including a control logic and a storage coupled to the control logic. The storage includes a plurality of bitcells and bitlines used to transfer data between the control logic and the bitcells. The control logic provides an address of a target bitcell to the storage. Within a single clock cycle, the storage uses the address to activate the target bitcell, to precharge bitlines coupled to the target bitcell, and to access the target bitcell.

    摘要翻译: 一种包括控制逻辑和耦合到控制逻辑的存储器的计算机系统。 存储器包括用于在控制逻辑和位单元之间传送数据的多个比特单元和位线。 控制逻辑向存储器提供目标位单元的地址。 在单个时钟周期内,存储器使用地址来激活目标比特单元,以预先耦合到目标比特单元的位线,并访问目标比特单元。

    Fast access memory architecture
    4.
    发明申请
    Fast access memory architecture 有权
    快速访问内存架构

    公开(公告)号:US20070223294A1

    公开(公告)日:2007-09-27

    申请号:US11385151

    申请日:2006-03-21

    IPC分类号: G11C7/00

    CPC分类号: G11C8/10

    摘要: A computer system comprising a control logic and a storage coupled to the control logic. The storage comprises a plurality of bitcells and bitlines used to transfer data between the control logic and the bitcells. The control logic provides an address of a target bitcell to the storage. Within a single clock cycle, the storage uses the address to activate the target bitcell, to precharge bitlines coupled to the target bitcell, and to access the target bitcell.

    摘要翻译: 一种包括控制逻辑和耦合到控制逻辑的存储器的计算机系统。 存储器包括用于在控制逻辑和位单元之间传送数据的多个比特单元和位线。 控制逻辑向存储器提供目标位单元的地址。 在单个时钟周期内,存储器使用地址来激活目标比特单元,以预先耦合到目标比特单元的位线,并访问目标比特单元。

    Adaptive voltage control and body bias for performance and energy optimization
    5.
    发明授权
    Adaptive voltage control and body bias for performance and energy optimization 有权
    用于性能和能量优化的自适应电压控制和体偏置

    公开(公告)号:US07307471B2

    公开(公告)日:2007-12-11

    申请号:US11213477

    申请日:2005-08-26

    IPC分类号: G05F1/565

    CPC分类号: H03K19/0008 H03K19/00384

    摘要: A device for adaptively controlling a voltage supplied to circuitry in close proximity to the device, comprising a processing module and a first tracking element coupled to the processing module. The first tracking element produces a first value indicative of a first estimated speed associated with the circuitry. The device also comprises a second tracking element coupled to the processing module. The second tracking element produces a second value indicative of a second estimated speed associated with the circuitry. The processing module compares each of the first and second values to respective target values and causes a voltage output to be adjusted based on the comparisons. The first and second tracking elements comprise a plurality of transistors, at least some of the transistors selectively provided with a transistor bias voltage to adjust transistor speed.

    摘要翻译: 一种用于自适应地控制提供给设备附近的电路的电压的装置,包括耦合到处理模块的处理模块和第一跟踪元件。 第一跟踪元件产生指示与电路相关联的第一估计速度的第一值。 该装置还包括耦合到处理模块的第二跟踪元件。 第二跟踪元件产生指示与电路相关联的第二估计速度的第二值。 处理模块将第一和第二值中的每一个与各自的目标值进行比较,并且基于比较使得电压输出被调整。 第一和第二跟踪元件包括多个晶体管,至少一些晶体管选择性地提供晶体管偏置电压以调整晶体管速度。

    MEMORY POWER MANAGEMENT SYSTEMS AND METHODS
    6.
    发明申请
    MEMORY POWER MANAGEMENT SYSTEMS AND METHODS 审中-公开
    存储电源管理系统和方法

    公开(公告)号:US20110216619A1

    公开(公告)日:2011-09-08

    申请号:US13106612

    申请日:2011-05-12

    IPC分类号: G11C5/14

    CPC分类号: G11C5/147

    摘要: Memory power management systems and methods are provided. One embodiment of the present invention includes a memory power management system. The system comprises a first low dropout (LDO) regulator that provides an active operating voltage that is derived from a first supply voltage to power a memory array during an active mode. The system further comprises a second LDO regulator that provides a minimum memory retention voltage that is derived from a second supply voltage to power the memory array in a standby mode, wherein the second supply voltage also powers at least one peripheral circuit for reading from and/or writing to the memory array.

    摘要翻译: 提供了内存电源管理系统和方法。 本发明的一个实施例包括存储器电源管理系统。 该系统包括第一低压差(LDO)调节器,其提供从第一电源电压导出的有源工作电压,以在激活模式期间为存储器阵列供电。 该系统还包括第二LDO调节器,其提供从第二电源电压导出的最低存储器保持电压,以在待机模式下为存储器阵列供电,其中第二电源电压还为至少一个外围电路供电以从其读取和/ 或写入存储器阵列。

    Memory Power Management Systems and Methods
    7.
    发明申请
    Memory Power Management Systems and Methods 有权
    内存电源管理系统和方法

    公开(公告)号:US20100103760A1

    公开(公告)日:2010-04-29

    申请号:US12258747

    申请日:2008-10-27

    IPC分类号: G11C5/14 G11C8/00

    CPC分类号: G11C5/147

    摘要: Memory power management systems and methods are provided. One embodiment of the present invention includes a memory power management system. The system comprises a first low dropout (LDO) regulator that provides an active operating voltage that is derived from a first supply voltage to power a memory array during an active mode. The system further comprises a second LDO regulator that provides a minimum memory retention voltage that is derived from a second supply voltage to power the memory array in a standby mode, wherein the second supply voltage also powers at least one peripheral circuit for reading from and/or writing to the memory array.

    摘要翻译: 提供了内存电源管理系统和方法。 本发明的一个实施例包括存储器电源管理系统。 该系统包括第一低压差(LDO)调节器,其提供从第一电源电压导出的有源工作电压,以在激活模式期间为存储器阵列供电。 该系统还包括第二LDO调节器,其提供从第二电源电压导出的最低存储器保持电压,以在待机模式下为存储器阵列供电,其中第二电源电压还为至少一个外围电路供电以从其读取和/ 或写入存储器阵列。

    Memory power management systems and methods
    8.
    发明授权
    Memory power management systems and methods 有权
    内存电源管理系统和方法

    公开(公告)号:US07961546B2

    公开(公告)日:2011-06-14

    申请号:US12258747

    申请日:2008-10-27

    IPC分类号: G11C5/14

    CPC分类号: G11C5/147

    摘要: Memory power management systems and methods are provided. One embodiment of the present invention includes a memory power management system. The system comprises a first low dropout (LDO) regulator that provides an active operating voltage that is derived from a first supply voltage to power a memory array during an active mode. The system further comprises a second LDO regulator that provides a minimum memory retention voltage that is derived from a second supply voltage to power the memory array in a standby mode, wherein the second supply voltage also powers at least one peripheral circuit for reading from and/or writing to the memory array.

    摘要翻译: 提供了内存电源管理系统和方法。 本发明的一个实施例包括存储器电源管理系统。 该系统包括第一低压差(LDO)调节器,其提供从第一电源电压导出的有源工作电压,以在激活模式期间为存储器阵列供电。 该系统还包括第二LDO调节器,其提供从第二电源电压导出的最小存储器保持电压,以在待机模式下为存储器阵列供电,其中第二电源电压还为至少一个外围电路供电以从其读取和/ 或写入存储器阵列。

    Adaptive voltage control for performance and energy optimization
    10.
    发明申请
    Adaptive voltage control for performance and energy optimization 有权
    用于性能和能量优化的自适应电压控制

    公开(公告)号:US20050194592A1

    公开(公告)日:2005-09-08

    申请号:US11045222

    申请日:2005-01-28

    IPC分类号: H01L29/04

    CPC分类号: G11C5/147

    摘要: A device for adaptively controlling a voltage supplied to circuitry in substantially close proximity to the device, comprising a processing module, a first tracking element coupled to the processing module and producing a first value indicative of a first estimated speed associated with the circuitry, and a second tracking element coupled to the processing module and producing a second value indicative of a second estimated speed associated with the circuitry. The processing module compares each of the first and second values to a target value and causes a voltage output to be adjusted based on said comparison.

    摘要翻译: 一种用于自适应地控制提供给基本上靠近设备的电路的电压的装置,包括处理模块,耦合到处理模块的第一跟踪元件,并产生指示与电路相关联的第一估计速度的第一值,以及 第二跟踪元件耦合到所述处理模块并产生指示与所述电路相关联的第二估计速度的第二值。 处理模块将第一和第二值中的每一个与目标值进行比较,并且基于所述比较使电压输出被调整。