摘要:
A crystal oscillation circuit has a reduced circuit area and enables to stably oscillate at low consumed current. The crystal oscillation circuit includes an oscillating amplifier and a constant voltage generator. The oscillating amplifier excites a resonator composed of a resistor, a crystal oscillator and a capacitor. The constant voltage generator includes a one-stage differential circuit composed of a transistor and a capacitor for suppressing transient fluctuation of a constant voltage Vreg for generating the constant voltage Vreg served as a supply voltage for the oscillating amplifier. By generating the constant voltage Vreg through the one-stage differential circuit, the phase lag of the constant voltage Vreg reaches 90 degrees at most. This eliminates the necessity of a phase compensation capacitor, resulting in making the circuit area smaller and realizing the stable oscillation at low consumed current.
摘要:
A crystal oscillation circuit has a reduced circuit area and enables to stably oscillate at low consumed current. The crystal oscillation circuit includes an oscillating amplifier and a constant voltage generator. The oscillating amplifier excites a resonator composed of a resistor, a crystal oscillator and a capacitor. The constant voltage generator includes a one-stage differential circuit composed of a transistor and a capacitor for suppressing transient fluctuation of a constant voltage Vreg for generating the constant voltage Vreg served as a supply voltage for the oscillating amplifier. By generating the constant voltage Vreg through the one-stage differential circuit, the phase lag of the constant voltage Vreg reaches 90 degrees at most. This eliminates the necessity of a phase compensation capacitor, resulting in making the circuit area smaller and realizing the stable oscillation at low consumed current.
摘要:
A semiconductor device in which a dielectric breakdown of a gate oxide in a MOS capacitor can be prevented and in which a circuit area can be reduced. The semiconductor device comprises an NMOS transistor a gate of which is connected to a terminal VDD on a high potential side and a PMOS transistor a gate of which is connected to a terminal GND on a low potential side, source/drain (S/D) regions of the NMOS transistor and source/drain (S/D) regions of the PMOS transistor being electrically connected.
摘要:
A semiconductor device in which a dielectric breakdown of a gate oxide in a MOS capacitor can be prevented and in which a circuit area can be reduced. The semiconductor device comprises an NMOS transistor a gate of which is connected to a terminal VDD on a high potential side and a PMOS transistor a gate of which is connected to a terminal GND on a low potential side, source/drain (S/D) regions of the NMOS transistor and source/drain (S/D) regions of the PMOS transistor being electrically connected.
摘要:
An object is not only to contribute to reduction in current consumption but also to advance actuation of a system required in a camera, an on-vehicle electric component, etc. by shortening a waiting time for stabilization of oscillation. An oscillator having an inverting amplifier inverting and amplifying an input signal and outputting it, a resonator connected to between an input and an output terminals of the inverting amplifier, a feedback resistance connected in parallel to the resonator, and an output circuit outputting a first clock signal based on a signal of an on-load parallel resonance frequency or a parallel resonance frequency oscillated by the resonator, the inverting amplifier and the feedback resistance to a function block is provided.
摘要:
An object is not only to contribute to reduction in current consumption but also to advance actuation of a system required in a camera, an on-vehicle electric component, etc. by shortening a waiting time for stabilization of oscillation. An oscillator having an inverting amplifier inverting and amplifying an input signal and outputting it, a resonator connected to between an input and an output terminals of the inverting amplifier, a feedback resistance connected in parallel to the resonator, and an output circuit outputting a first clock signal based on a signal of an on-load parallel resonance frequency or a parallel resonance frequency oscillated by the resonator, the inverting amplifier and the feedback resistance to a function block is provided.
摘要:
A designing device for designing a layout of a semiconductor device includes a layout position candidate extracting unit for obtaining layout position candidates of a regulator, a tentatively wiring unit for tentatively arranging the regulator at the layout position candidates and tentatively laying out a power line, and a regulator layout position deciding unit for deciding a position of a tentative layout at which an area of the power line that is tentatively laid out is the smallest as the layout position of the regulator.
摘要:
A level conversion circuit for converting a first signal at a lower power source side into a second signal at a higher power source side, which is higher than the lower power source, includes first and second transistors provided at a ground side and controlled by the first signal and an inverted signal there of; third and fourth transistors gates and drains of which are cross-connected, provided at the higher power source side and connected to the first and second transistors respectively; and an initialization circuit for, at a higher power voltage rise time, reducing (or raising), along a current path, a level of either a first node located between the first and third transistors, or a second node located between the second and fourth transistors, to a ground voltage (or to a voltage of the higher power source).