公开(公告)号：US20180266016A1

公开(公告)日：2018-09-20

申请号：US15983455

申请日：2018-05-18

Applicant: SunEdison Semiconductor Limited (UEN20133416H)

Inventor： Zheng Lu ,  Gaurab Samanta ,  Tse-Wei Lu ,  Feng-Chien Tsai

IPC: C30B33/02 ,  H01L21/02 ,  C30B15/20 ,  H01L21/00 ,  H01L29/167 ,  C30B29/06 ,  H01L29/32

CPC classification number: C30B33/02 ,  C30B15/203 ,  C30B29/06 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.