公开(公告)号：US20220020889A1

公开(公告)日：2022-01-20

申请号：US17409614

申请日：2021-08-23

申请人： SunPower Corporaton ,  Total Marketing Services

发明人： Taiqing Qiu ,  Gilles Olav Tanguy Sylvain Poulain ,  Périne Jaffrennou ,  Nada Habka ,  Sergej Filonovich

IPC分类号： H01L31/068 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368

摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

公开(公告)号：US11101398B2

公开(公告)日：2021-08-24

申请号：US16666055

申请日：2019-10-28

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Taiqing Qiu ,  Gilles Olav Tanguy Sylvain Poulain ,  Périne Jaffrennou ,  Nada Habka ,  Sergej Filonovich

IPC分类号： H01L31/068 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368

摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

公开(公告)号：US20200066930A1

公开(公告)日：2020-02-27

申请号：US16666055

申请日：2019-10-28

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Taiqing Qiu ,  Gilles Olav Tanguy Sylvain Poulain ,  Périne Jaffrennou ,  Nada Habka ,  Sergej Filonovich

IPC分类号： H01L31/068 ,  H01L31/0368 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224

摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

公开(公告)号：US20140338744A1

公开(公告)日：2014-11-20

申请号：US14367607

申请日：2012-12-20

申请人： TOTAL MARKETING SERVICES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  ECOLE POLYTECHNIQUE

发明人： Nada Habka ,  Pavel Bulkin ,  Pere Roca i Cabarrocas

IPC分类号： H01L31/18 ,  H01L31/0236 ,  H01L31/028 ,  H01L21/3065 ,  H01L31/0352

CPC分类号： H01L31/1804 ,  H01L21/3065 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  Y02E10/50

摘要： The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm2 and 6.5 W/cm2 of plasma power in a matrix distributed electron cyclotron resonance plasma source, the substrate bias being between 100 V and 300 V.

摘要翻译： 本发明涉及一种用于纹理化硅衬底表面的方法，包括将所述表面暴露于至少从氩气中产生的MDECR等离子体的步骤，其使用矩阵中的1.5W / cm 2至6.5W / cm 2的等离子体功率 分布式电子回旋共振等离子体源，衬底偏置在100V和300V之间。