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公开(公告)号：US20220020889A1
公开(公告)日：2022-01-20
申请号：US17409614
申请日：2021-08-23
发明人： Taiqing Qiu , Gilles Olav Tanguy Sylvain Poulain , Périne Jaffrennou , Nada Habka , Sergej Filonovich
IPC分类号： H01L31/068 , H01L31/18 , H01L31/0224 , H01L31/02 , H01L31/0216 , H01L31/0236 , H01L31/0368
摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
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公开(公告)号：US11101398B2
公开(公告)日：2021-08-24
申请号：US16666055
申请日：2019-10-28
发明人： Taiqing Qiu , Gilles Olav Tanguy Sylvain Poulain , Périne Jaffrennou , Nada Habka , Sergej Filonovich
IPC分类号： H01L31/068 , H01L31/18 , H01L31/0224 , H01L31/02 , H01L31/0216 , H01L31/0236 , H01L31/0368
摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
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公开(公告)号：US20220285570A1
公开(公告)日：2022-09-08
申请号：US17751446
申请日：2022-05-23
IPC分类号： H01L31/0224 , H01L31/18 , B23K26/364 , B23K26/354 , H01L31/05 , H01L31/0745
摘要： Approaches for foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves locating a metal foil above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate. The method also involves laser welding the metal foil to the alternating N-type and P-type semiconductor regions. The method also involves patterning the metal foil by laser ablating through at least a portion of the metal foil at regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The laser welding and the patterning are performed at the same time.
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公开(公告)号：US09868132B2
公开(公告)日：2018-01-16
申请号：US14397712
申请日：2013-04-26
CPC分类号： B05C21/005 , B41J2/07 , B41J2/14104 , B41J2/14451 , B41M5/0023 , H01L31/022425 , Y02E10/50
摘要： The invention relates to a die for depositing a conductive fluid onto a substrate, including a structure (11) for supporting at least one fluid (13) which is conductive and the viscosity of which sensitive to the radiation from a light source (5), in order to deposit said fluid (13) onto a substrate (3) so as to form conductive contacts or tracks on the substrate (3). The support structure (11) includes at least one tank (17) for said conductive fluid, the bottom wall (19) of which is to be arranged opposite said substrate (3) during the deposition, and said bottom wall (19) has perforations for enabling the flow (18) of said conductive fluid (13) onto the substrate (3) when said fluid (13) is subjected to the radiation (15) from said light source (5), wherein the perforations are formed according to a pattern of the fluid to be deposited onto the substrate (3). The die (7) further comprises an optical plate (9) having a pattern (30) pervious to the radiation from said light source (5), the optical plate (9) being impervious to the radiation from said light source (5) outside said pattern (30), while the pattern (30) pervious to the radiation from said light source on said optical plate (9) corresponds to a pattern covering the pattern (22) of the perforations of said support structure.
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公开(公告)号：US20200066930A1
公开(公告)日：2020-02-27
申请号：US16666055
申请日：2019-10-28
发明人： Taiqing Qiu , Gilles Olav Tanguy Sylvain Poulain , Périne Jaffrennou , Nada Habka , Sergej Filonovich
IPC分类号： H01L31/068 , H01L31/0368 , H01L31/0236 , H01L31/0216 , H01L31/02 , H01L31/18 , H01L31/0224
摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
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公开(公告)号：US09406820B2
公开(公告)日：2016-08-02
申请号：US14485477
申请日：2014-09-12
IPC分类号： H01L21/00 , H01L31/0232 , H01L31/0224 , H01L31/0236 , H01L31/068 , H01L31/18
CPC分类号： H01L31/02327 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/186 , Y02E10/547
摘要： The disclosed technology relates generally to photovoltaic cells, and more particularly to photovoltaic cells with plated metal contacts. In one aspect, a method of fabricating a photovoltaic cell with a metal contact pattern on a surface of a semiconductor substrate includes locally smoothening portions of the surface of the semiconductor substrate by using a first laser, at predetermined locations. The method additionally includes doping the surface of the semiconductor substrate to form an emitter region. The method additionally includes forming a dielectric layer on the surface of the semiconductor substrate, and subsequently forming openings through the dielectric layer by using a second laser, thereby locally exposing the underlying surface of the semiconductor substrate at the predetermined locations. The method further includes forming metal contacts at exposed regions of the surface of the semiconductor substrate by plating.
摘要翻译： 所公开的技术通常涉及光伏电池，更具体地涉及具有电镀金属触点的光伏电池。 一方面，在半导体衬底的表面上制造具有金属接触图案的光伏电池的方法包括在预定位置使用第一激光器在半导体衬底的表面的局部平滑化部分。 该方法另外包括掺杂半导体衬底的表面以形成发射极区域。 该方法还包括在半导体衬底的表面上形成电介质层，随后通过使用第二激光器形成通过电介质层的开口，由此在预定位置局部暴露半导体衬底的下表面。 该方法还包括通过电镀在半导体衬底的表面的暴露区域形成金属接触。
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公开(公告)号：US11374145B2
公开(公告)日：2022-06-28
申请号：US16704983
申请日：2019-12-05
发明人： Yu-Chen Shen , Périne Jaffrennou , Gilles Olav Tanguy Sylvain Poulain , Michael C. Johnson , Seung Bum Rim
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0236 , H01L31/068 , H01L31/0747
摘要： Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.
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公开(公告)号：US20180138354A1
公开(公告)日：2018-05-17
申请号：US15807915
申请日：2017-11-09
发明人： Périne Jaffrennou , Gilles Olav Tanguy Sylvain Poulain , Kieran Mark Tracy , Taiqing Qiu , Michael C. Johnson , Seung Bum Rim
IPC分类号： H01L31/18 , H01L31/0216
CPC分类号： H01L31/1864 , H01L31/02168 , H01L31/022441 , H01L31/1868
摘要： A curing tool for fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a curing tool combines a UV-exposure stage and one or more of a deposition or an annealing stage to fabricate a solar cell. For example, a radiation curing stage can precede a back end processing stage used to perform operations on a back contact solar cell. The curing tool can therefore be used to perform a method to improve UV stability of solar cells.
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公开(公告)号：US20150024541A1
公开(公告)日：2015-01-22
申请号：US14485477
申请日：2014-09-12
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/02327 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/186 , Y02E10/547
摘要： The disclosed technology relates generally to photovoltaic cells, and more particularly to photovoltaic cells with plated metal contacts. In one aspect, a method of fabricating a photovoltaic cell with a metal contact pattern on a surface of a semiconductor substrate includes locally smoothening portions of the surface of the semiconductor substrate by using a first laser, at predetermined locations. The method additionally includes doping the surface of the semiconductor substrate to form an emitter region. The method additionally includes forming a dielectric layer on the surface of the semiconductor substrate, and subsequently forming openings through the dielectric layer by using a second laser, thereby locally exposing the underlying surface of the semiconductor substrate at the predetermined locations. The method further includes forming metal contacts at exposed regions of the surface of the semiconductor substrate by plating.
摘要翻译： 所公开的技术通常涉及光伏电池，更具体地涉及具有电镀金属触点的光伏电池。 一方面，在半导体衬底的表面上制造具有金属接触图案的光伏电池的方法包括在预定位置使用第一激光器在半导体衬底的表面的局部平滑化部分。 该方法另外包括掺杂半导体衬底的表面以形成发射极区域。 该方法还包括在半导体衬底的表面上形成电介质层，随后通过使用第二激光器形成通过电介质层的开口，由此在预定位置局部暴露半导体衬底的下表面。 该方法还包括通过电镀在半导体衬底的表面的暴露区域形成金属接触。
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公开(公告)号：US20190386158A1
公开(公告)日：2019-12-19
申请号：US16464074
申请日：2017-12-13
发明人： Taiqing Qiu , Emeline Soichi , Périne Jaffrennou
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/0352 , H01L31/18
摘要： Methods of fabricating solar cells using plasma-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes forming a dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer over the dielectric layer. The method also includes exposing the ARC layer to plasma-induced radiation.
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