摘要:
Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.
摘要:
Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.
摘要:
An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.
摘要:
An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.
摘要:
In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data.
摘要:
In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data.
摘要:
Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.
摘要:
Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.
摘要:
A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer.
摘要:
Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.