公开(公告)号：US20050287738A1

公开(公告)日：2005-12-29

申请号：US11159130

申请日：2005-06-23

申请人： Sung-il Cho ,  Kyeong-koo Chi ,  Seung-pil Chung ,  Chang-jin Kang ,  Cheol-kyu Lee

发明人： Sung-il Cho ,  Kyeong-koo Chi ,  Seung-pil Chung ,  Chang-jin Kang ,  Cheol-kyu Lee

IPC分类号： H01L21/8242 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L27/10852 ,  H01L28/91

摘要： A method of manufacturing a semiconductor memory device includes forming a carbon-containing layer on a semiconductor substrate, forming an insulating layer pattern on the carbon-containing layer, the insulating layer pattern partially exposing an upper surface of the carbon-containing layer, dry-etching the exposed portion of the carbon-containing layer, to form a carbon-containing layer pattern for defining a storage node hole, forming a bottom electrode inside the storage node hole, forming a dielectric layer on the bottom electrode inside the storage node hole, the dielectric layer covering the bottom electrode, and forming an upper electrode on the dielectric layer inside the storage node hole, the upper electrode covering the dielectric layer.

摘要翻译： 半导体存储器件的制造方法包括在半导体衬底上形成含碳层，在含碳层上形成绝缘层图案，将含碳层的上表面部分地露出的绝缘层图案， 蚀刻含碳层的暴露部分，形成用于限定存储节点孔的含碳层图案，在存储节点孔内部形成底部电极，在存储节点孔内部的底部电极上形成电介质层， 所述介电层覆盖所述底部电极，并且在所述存储节点孔内部的所述电介质层上形成上部电极，所述上部电极覆盖所述电介质层。

公开(公告)号：US07402488B2

公开(公告)日：2008-07-22

申请号：US11159130

申请日：2005-06-23

申请人： Sung-il Cho ,  Kyeong-koo Chi ,  Seung-pil Chung ,  Chang-jin Kang ,  Cheol-kyu Lee

发明人： Sung-il Cho ,  Kyeong-koo Chi ,  Seung-pil Chung ,  Chang-jin Kang ,  Cheol-kyu Lee

IPC分类号： H01L21/8242

CPC分类号： H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L27/10852 ,  H01L28/91

摘要： A method of manufacturing a semiconductor memory device includes forming a carbon-containing layer on a semiconductor substrate, forming an insulating layer pattern on the carbon-containing layer, the insulating layer pattern partially exposing an upper surface of the carbon-containing layer, dry-etching the exposed portion of the carbon-containing layer, to form a carbon-containing layer pattern for defining a storage node hole, forming a bottom electrode inside the storage node hole, forming a dielectric layer on the bottom electrode inside the storage node hole, the dielectric layer covering the bottom electrode, and forming an upper electrode on the dielectric layer inside the storage node hole, the upper electrode covering the dielectric layer.

摘要翻译： 半导体存储器件的制造方法包括在半导体衬底上形成含碳层，在含碳层上形成绝缘层图案，将含碳层的上表面部分地露出的绝缘层图案， 蚀刻含碳层的暴露部分，形成用于限定存储节点孔的含碳层图案，在存储节点孔内部形成底部电极，在存储节点孔内部的底部电极上形成电介质层， 所述介电层覆盖所述底部电极，并且在所述存储节点孔内部的所述电介质层上形成上部电极，所述上部电极覆盖所述电介质层。

公开(公告)号：US06228210B1

公开(公告)日：2001-05-08

申请号：US09295629

申请日：1999-04-20

申请人： Cheol-kyu Lee

发明人： Cheol-kyu Lee

IPC分类号： H05H100

CPC分类号： H01J37/32192

摘要： A surface wave coupled plasma etching apparatus according to the present invention can produce a plasma within a confined area above an etching object by a microwave confinement plate, so as to prevent an upper portion of the apparatus from being sputtered by the plasma. The microwave confinement plate is interposed between a pair of glass plates, so that the microwave confinement plate is not exposed to and sputtered by the plasma during an etching process. The lower glass plate which protects the microwave confinement plate from the plasma is formed so as not to change a temperature of itself rapidly when the etching stops, and thereby an undesirable polymer adhesion to the lower glass plate is avoided.

摘要翻译： 根据本发明的表面波耦合等离子体蚀刻装置可以通过微波限制板在蚀刻对象之上的限制区域内产生等离子体，以防止装置的上部被等离子体溅射。 微波限制板介于一对玻璃板之间，使得微波限制板在蚀刻过程中不被等离子体暴露并溅射。 形成保护微波限制板与等离子体的下部玻璃板，以便在蚀刻停止时不使其自身温度快速变化，从而避免了对下部玻璃板的不良聚合物的粘附。

公开(公告)号：US20070178637A1

公开(公告)日：2007-08-02

申请号：US11699784

申请日：2007-01-30

申请人： Hyung-suk Jung ,  Cheol-kyu Lee ,  Jong-ho Lee ,  Sung-kee Han ,  Yun-seok Kim

发明人： Hyung-suk Jung ,  Cheol-kyu Lee ,  Jong-ho Lee ,  Sung-kee Han ,  Yun-seok Kim

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823842

摘要： A method of fabricating a gate of a semiconductor device using an oxygen-free ashing process is disclosed. The method includes forming a high-k dielectric film, having a dielectric constant higher than a silicon oxide film, on a semiconductor substrate including an NMOS region and a PMOS region, forming an etching target film on the high-k dielectric film, forming a photoresist pattern to expose any one region of the two regions, on the etching target film, etching the etching target film using the photoresist pattern as an etching mask, and removing the photoresist pattern using plasma formed in the presence of an oxygen-free reactive gas.

摘要翻译： 公开了一种使用无氧灰化工艺制造半导体器件的栅极的方法。 该方法包括在包括NMOS区域和PMOS区域的半导体衬底上形成具有高于氧化硅膜的介电常数的高k电介质膜，在高k电介质膜上形成蚀刻靶膜，形成 光致抗蚀剂图案以暴露两个区域的任何一个区域，在蚀刻目标膜上，使用光刻胶图案蚀刻蚀刻目标膜作为蚀刻掩模，以及使用在无氧反应气体存在下形成的等离子体去除光致抗蚀剂图案 。

公开(公告)号：US06479390B1

公开(公告)日：2002-11-12

申请号：US09556733

申请日：2000-04-21

申请人： Cheol-kyu Lee

发明人： Cheol-kyu Lee

IPC分类号： H01L21302

CPC分类号： H01J37/32192 ,  H01L21/31116

摘要： A method of etching a material film formed on a semiconductor wafer loaded onto a reaction chamber of a surface wave coupled plasma etching apparatus having an insulation plate which is capable of generating surface waves by microwaves, and a glass plate placed below the insulation plate, for transmitting the produced surface waves. In the method, the glass plate is rapidly pre-heated by generating an argon (Ar) or xenon (Xe) surface wave coupled plasma which has a high ion density and a large mass, and the material layer is then etched. Therefore, the preheating time of the glass plate can be sharply reduced to less than five minutes. Also, because the etching gas is not used for the heating of the glass, damage to the glass plate can be reduced and generation of polymer on the glass plate is suppressed with an improved etching efficiency, so that failure in etching can also be avoided.

摘要翻译： 一种蚀刻形成在装载到能够通过微波产生表面波的绝缘板的表面波耦合等离子体蚀刻装置的反应室上的半导体晶片上形成的材料膜的方法和放置在绝缘板下方的玻璃板， 传输产生的表面波。 在该方法中，通过产生具有高离子密度和大质量的氩（Ar）或氙（Xe）表面波耦合等离子体来快速预热玻璃板，然后蚀刻该材料层。 因此，玻璃板的预热时间可以急剧减少到5分钟以下。 此外，由于蚀刻气体不用于玻璃的加热，因此可以降低玻璃板的损伤，并且以提高的蚀刻效率抑制玻璃板上的聚合物的产生，从而也可以避免蚀刻失败。