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    Method of manufacturing EUVL alternating phase-shift mask
    1.
    发明授权
    Method of manufacturing EUVL alternating phase-shift mask 有权
    制造EUVL交替相移掩模的方法

    公开(公告)号：US07601467B2

    公开(公告)日：2009-10-13

    申请号：US11367438

    申请日：2006-03-06

    申请人： Sung-min Huh ,  Hee-bom Kim ,  Seong-woon Choi ,  Dong-wan Kim ,  Chan-uk Jeon

    发明人： Sung-min Huh ,  Hee-bom Kim ,  Seong-woon Choi ,  Dong-wan Kim ,  Chan-uk Jeon

    IPC分类号： G03F1/00

    CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/30

    摘要： A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.

    摘要翻译： 制造极紫外光刻（EUVL）交替相移掩模的方法包括制备具有反射层的基板，在反射层上形成遮光层图案以覆盖反射层的一部分，同时留下反射区域 的反射层，通过蚀刻反射层在反射层的相移区域中形成沟槽，并且改变反射区域的非相移区域的物理结构，以降低其相对于极端的超反射区域的反射率 （EUV）灯。

    METHOD OF FORMING PHOTOMASK USING CALIBRATION PATTERN, AND PHOTOMASK HAVING CALIBRATION PATTERN
    3.
    发明申请
    METHOD OF FORMING PHOTOMASK USING CALIBRATION PATTERN, AND PHOTOMASK HAVING CALIBRATION PATTERN 有权
    使用校准图形成光电子的方法和具有校准图案的光电子

    公开(公告)号：US20120159405A1

    公开(公告)日：2012-06-21

    申请号：US13240732

    申请日：2011-09-22

    申请人： Young-keun YOON ,  Hee-bom Kim ,  Myoung-soo Lee ,  Chan-uk Jeon ,  Hak-seung Han

    发明人： Young-keun YOON ,  Hee-bom Kim ,  Myoung-soo Lee ,  Chan-uk Jeon ,  Hak-seung Han

    IPC分类号： G06F17/50

    CPC分类号： G03F1/70

    摘要： A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.

    摘要翻译： 使用可以将期望图案精确地转印到基板的校准图案形成光掩模的方法。 该方法包括提供一维校准设计图案，每个具有第一设计措施并提供每个具有第二设计措施的二维校准设计图案; 使用一维校准设计图案获得一维校准测量图案，并使用二维校准设计图案获得二维校准测量图案; 获得一维校准测量图案的第一测量度量，并获得二维校准测量图案的第二测量度量; 建立第一测量措施与第二测量措施之间的相关性; 以及使用所述相关性将主模式的主测量度量转换为相应的第一测量度量。

    Method of forming photomask using calibration pattern, and photomask having calibration pattern
    4.
    发明授权
    Method of forming photomask using calibration pattern, and photomask having calibration pattern 有权
    使用校准图案形成光掩模的方法，以及具有校准图案的光掩模

    公开(公告)号：US08522172B2

    公开(公告)日：2013-08-27

    申请号：US13240732

    申请日：2011-09-22

    申请人： Young-keun Yoon ,  Hee-bom Kim ,  Myoung-soo Lee ,  Chan-uk Jeon ,  Hak-seung Han

    发明人： Young-keun Yoon ,  Hee-bom Kim ,  Myoung-soo Lee ,  Chan-uk Jeon ,  Hak-seung Han

    IPC分类号： G06F17/50

    CPC分类号： G03F1/70

    摘要： A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.

    摘要翻译： 使用可以将期望图案精确地转印到基板的校准图案形成光掩模的方法。 该方法包括提供一维校准设计图案，每个具有第一设计措施并提供每个具有第二设计措施的二维校准设计图案; 使用一维校准设计图案获得一维校准测量图案，并使用二维校准设计图案获得二维校准测量图案; 获得一维校准测量图案的第一测量度量，并获得二维校准测量图案的第二测量度量; 建立第一测量措施与第二测量措施之间的相关性; 以及使用所述相关性将主模式的主测量度量转换为相应的第一测量度量。

    METHOD AND APPARATUS FOR CLEANING PHOTOMASK
    7.
    发明申请
    METHOD AND APPARATUS FOR CLEANING PHOTOMASK 有权
    清洗光电子的方法和装置

    公开(公告)号：US20110023914A1

    公开(公告)日：2011-02-03

    申请号：US12846181

    申请日：2010-07-29

    申请人： Yun-song Jeong ,  Hyung-ho Ko ,  Sung-jae Han ,  Kyung-noh Kim ,  Chan-uk Jeon

    发明人： Yun-song Jeong ,  Hyung-ho Ko ,  Sung-jae Han ,  Kyung-noh Kim ,  Chan-uk Jeon

    IPC分类号： B08B7/04

    CPC分类号： G03F1/82

    摘要： Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

    摘要翻译： 提供了一种用于清洁光掩模的方法和装置。 包括第一区域和围绕第一区域的第二区域的光掩模，设置在第一区域上的要被保护的图案和待除去的材料存在于第二区域上。 从第二区域的内部区域朝向第二区域的外部区域喷射清洁液体以除去材料，并且从第一区域向第二区域吹送气体以保护图案。

    Method of manufacturing rim type of photomask and photomask made by such method
    8.
    发明授权
    Method of manufacturing rim type of photomask and photomask made by such method 有权
    制造这种方法制造的光掩模和光掩模的边缘类型的方法

    公开(公告)号：US07632611B2

    公开(公告)日：2009-12-15

    申请号：US11434868

    申请日：2006-05-17

    申请人： Chang-hwan Kim ,  Gi-sung Yoon ,  Sun-young Choi ,  Chan-uk Jeon

    发明人： Chang-hwan Kim ,  Gi-sung Yoon ,  Sun-young Choi ,  Chan-uk Jeon

    IPC分类号： G03F1/00

    CPC分类号： G03F1/29 ,  G03F1/30

    摘要： A method of forming a rim type of photomask prevents a chrome pattern formed in the 0°-phase shift region of the mask substrate from being irregular and hence, ensures that the border of the 0°-phase shift region has a uniform width. First, a light blocking layer is formed on a quartz substrate. A select portion of the light blocking layer is etched to form a patterned light blocking layer, and the underlying quartz substrate is etched to a predetermined depth to form a 180°-phase shift region. Then, a fluid material layer is formed on the quartz substrate without an electron beam lithography process. The fluid material layer covers a central portion of the patterned light blocking layer and leaves an outer peripheral portion of the patterned light blocking layer exposed. Subsequently, the patterned light blocking layer is etched using the fluid material layer as a mask to form a light blocking pattern and to expose the substrate along a border adjacent the 180°-phase shift region. Finally, the fluid material layer is removed.

    摘要翻译： 形成边缘型光掩模的方法防止在掩模基板的0°相移区域中形成的铬图案不规则，从而确保0°相移区域的边界具有均匀的宽度。 首先，在石英基板上形成遮光层。 蚀刻遮光层的选择部分以形成图案化阻光层，并且将下面的石英衬底蚀刻到预定深度以形成180°相移区域。 然后，在石英衬底上形成流体材料层，而不用电子束光刻工艺。 流体材料层覆盖图案化阻光层的中心部分，并且使图案化的遮光层的外周部分露出。 随后，使用流体材料层作为掩模蚀刻图案形成的阻光层，以形成遮光图案，并沿邻近180°相移区域的边界露出基板。 最后，去除流体材料层。

    Method and apparatus for cleaning photomask
    9.
    发明授权
    Method and apparatus for cleaning photomask 有权
    清洗光掩模的方法和设备

    公开(公告)号：US08414708B2

    公开(公告)日：2013-04-09

    申请号：US12846181

    申请日：2010-07-29

    申请人： Yun-song Jeong ,  Hyung-ho Ko ,  Sung-jae Han ,  Kyung-noh Kim ,  Chan-uk Jeon

    发明人： Yun-song Jeong ,  Hyung-ho Ko ,  Sung-jae Han ,  Kyung-noh Kim ,  Chan-uk Jeon

    IPC分类号： B08B3/04

    CPC分类号： G03F1/82

    摘要： Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

    摘要翻译： 提供了一种用于清洁光掩模的方法和装置。 包括第一区域和围绕第一区域的第二区域的光掩模，设置在第一区域上的要被保护的图案和待除去的材料存在于第二区域上。 从第二区域的内部区域朝向第二区域的外部区域喷射清洁液体以除去材料，并且从第一区域向第二区域吹送气体以保护图案。

    Method of manufacturing rim type of photomask and photomask made by such method
    10.
    发明申请
    Method of manufacturing rim type of photomask and photomask made by such method 有权
    制造这种方法制造的光掩模和光掩模的边缘类型的方法

    公开(公告)号：US20070020533A1

    公开(公告)日：2007-01-25

    申请号：US11434868

    申请日：2006-05-17

    申请人： Chang-hwan Kim ,  Gi-sung Yoon ,  Sun-young Choi ,  Chan-uk Jeon

    发明人： Chang-hwan Kim ,  Gi-sung Yoon ,  Sun-young Choi ,  Chan-uk Jeon

    IPC分类号： G03C5/00 ,  G03F1/00

    CPC分类号： G03F1/29 ,  G03F1/30

    摘要： A method of forming a rim type of photomask prevents a chrome pattern formed in the 0°-phase shift region of the mask substrate from being irregular and hence, ensures that the border of the 0°-phase shift region has a uniform width. First, a light blocking layer is formed on a quartz substrate. A select portion of the light blocking layer is etched to form a patterned light blocking layer, and the underlying quartz substrate is etched to a predetermined depth to form a 180°-phase shift region. Then, a fluid material layer is formed on the quartz substrate without an electron beam lithography process. The fluid material layer covers a central portion of the patterned light blocking layer and leaves an outer peripheral portion of the patterned light blocking layer exposed. Subsequently, the patterned light blocking layer is etched using the fluid material layer as a mask to form a light blocking pattern and to expose the substrate along a border adjacent the 180°-phase shift region. Finally, the fluid material layer is removed.

    摘要翻译： 形成边缘型光掩模的方法防止在掩模基板的0°相移区域中形成的铬图案不规则，从而确保0°相移区域的边界具有均匀的宽度。 首先，在石英基板上形成遮光层。 蚀刻遮光层的选择部分以形成图案化阻光层，并且将下面的石英衬底蚀刻到预定深度以形成180°相移区域。 然后，在石英衬底上形成流体材料层，而不用电子束光刻工艺。 流体材料层覆盖图案化阻光层的中心部分，并且使图案化的遮光层的外周部分露出。 随后，使用流体材料层作为掩模蚀刻图案形成的阻光层，以形成遮光图案，并沿邻近180°相移区域的边界露出基板。 最后，去除流体材料层。