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公开(公告)号：US07601467B2
公开(公告)日：2009-10-13
申请号：US11367438
申请日：2006-03-06
申请人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
发明人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
IPC分类号： G03F1/00
摘要： A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.
摘要翻译： 制造极紫外光刻（EUVL）交替相移掩模的方法包括制备具有反射层的基板，在反射层上形成遮光层图案以覆盖反射层的一部分，同时留下反射区域 的反射层，通过蚀刻反射层在反射层的相移区域中形成沟槽，并且改变反射区域的非相移区域的物理结构，以降低其相对于极端的超反射区域的反射率 （EUV）灯。
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公开(公告)号：US20060240334A1
公开(公告)日：2006-10-26
申请号：US11367438
申请日：2006-03-06
申请人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
发明人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
摘要： A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.
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公开(公告)号：US20060177745A1
公开(公告)日：2006-08-10
申请号：US11338542
申请日：2006-01-24
申请人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Jin-hong Park
发明人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Jin-hong Park
CPC分类号： G03F1/30
摘要： A phase shift mask (PSM) is provided. The PSM includes a light-transmitting substrate, a light-blocking region, a first light-transmitting region, and a second light-transmitting region. The light-blocking region is formed in the light-transmitting substrate. The first light-transmitting region is formed as both a first phase shift region for transmitting 0°-phase shifted light and as a first polarization region for TE-polarizing the transmitted light. The second light-transmitting region contacts the first light-transmitting region to form a boundary. The second light-transmitting region is formed in the light-transmitting substrate as a second phase shift region for transmitting 180°-phase shifted light and as a second polarization region for TM-polarizing the transmitted light to prevent a phase conflict at the boundary.
摘要翻译： 提供了相移掩模（PSM）。 PSM包括透光衬底，遮光区域，第一透光区域和第二透光区域。 遮光区域形成在透光基板中。 第一光透射区域形成为用于透射0°相移光的第一相移区域和用于使透射光TE偏振的第一偏振区域。 第二透光区域与第一透光区域接触以形成边界。 第二透光区形成在透光性基板中，作为用于透射180°相移的光的第二相移区域，以及用于TM偏振透射光的第二偏振区域，以防止边界处的相位冲突。
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4.发明申请Reflective photomask, method of fabricating the same, and reflective blank photomask 有权反射光掩模，其制造方法和反射性空白光掩模公开(公告)号：US20070224523A1
公开(公告)日：2007-09-27
申请号：US11723472
申请日：2007-03-20
申请人： Sung-min Huh , Hee-bom Kim
发明人： Sung-min Huh , Hee-bom Kim
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G21K1/062 , G21K2201/061 , Y10T428/31616
摘要： The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.
摘要翻译： 反射光掩模可以包括衬底，形成在衬底上的反射层，形成在反射层上并在衬底的第一部分上方的吸收图案。 补偿部分可以形成在衬底的至少第二部分上。 第二部分与第一部分相邻，并且补偿部分比吸收图案薄。
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5.发明授权Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method 失效使用该方法校正光掩模和光掩模中具有校正关键尺寸的临界尺寸的方法公开(公告)号：US07745072B2
公开(公告)日：2010-06-29
申请号：US11808588
申请日：2007-06-12
申请人： Jin-sik Jung , Hee-bom Kim , Hoon Kim , Sung-min Huh
发明人： Jin-sik Jung , Hee-bom Kim , Hoon Kim , Sung-min Huh
CPC分类号： G03F1/72
摘要： Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.
摘要翻译： 提供了一种使用该方法校正光掩模中的临界尺寸（CD）和具有校正CD的光掩模的方法。 该方法可以包括提供相对于入射光透明的衬底，在衬底上形成屏蔽图案以形成光掩模，检测屏蔽图案的CD误差区域，以及形成校正膜以改变事件的强度 在CD错误区域中的光，以校正由屏蔽图案形成的电路图案的临界尺寸（CD）。
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公开(公告)号：US20080090156A1
公开(公告)日：2008-04-17
申请号：US11821762
申请日：2007-06-25
申请人： Hee-Bom Kim , Jeung-woo Lee , Sung-min Huh
发明人： Hee-Bom Kim , Jeung-woo Lee , Sung-min Huh
IPC分类号： G03F1/00
摘要： A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.
摘要翻译： 光掩模具有高度可靠的辅助图案，并且提供了其制造方法。 光掩模包括透明基板，电路图案和辅助图案。 相对于其表面凹入透明基板的电路图案具有第一厚度，并且邻近于电路图案并且与电路图案间隔开的辅助图案相对于其表面凹入到透明基板中，同时具有较小的第二厚度 比第一厚度。
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7.发明申请Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method 失效使用该方法校正光掩模和光掩模中具有校正关键尺寸的临界尺寸的方法公开(公告)号：US20080044742A1
公开(公告)日：2008-02-21
申请号：US11808588
申请日：2007-06-12
申请人： Jin-sik Jung , Hee-bom Kim , Hoon Kim , Sung-min Huh
发明人： Jin-sik Jung , Hee-bom Kim , Hoon Kim , Sung-min Huh
IPC分类号： G03F7/004
CPC分类号： G03F1/72
摘要： Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.
摘要翻译： 提供了一种使用该方法校正光掩模中的临界尺寸（CD）和具有校正CD的光掩模的方法。 该方法可以包括提供相对于入射光透明的衬底，在衬底上形成屏蔽图案以形成光掩模，检测屏蔽图案的CD误差区域，以及形成校正膜以改变事件的强度 在CD错误区域中的光，以校正由屏蔽图案形成的电路图案的临界尺寸（CD）。
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公开(公告)号：US07754398B2
公开(公告)日：2010-07-13
申请号：US11821762
申请日：2007-06-25
申请人： Hee-bom Kim , Jeung-woo Lee , Sung-min Huh
发明人： Hee-bom Kim , Jeung-woo Lee , Sung-min Huh
IPC分类号： G03F1/00
摘要： A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.
摘要翻译： 光掩模具有高度可靠的辅助图案，并且提供了其制造方法。 光掩模包括透明基板，电路图案和辅助图案。 相对于其表面凹入透明基板的电路图案具有第一厚度，并且邻近于电路图案并且与电路图案间隔开的辅助图案相对于其表面凹入到透明基板中，同时具有较小的第二厚度 比第一厚度。
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9.发明授权Reflective photomask, method of fabricating the same, and reflective blank photomask 有权反射光掩模，其制造方法和反射性空白光掩模公开(公告)号：US07642017B2
公开(公告)日：2010-01-05
申请号：US11723472
申请日：2007-03-20
申请人： Sung-min Huh , Hee-bom Kim
发明人： Sung-min Huh , Hee-bom Kim
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G21K1/062 , G21K2201/061 , Y10T428/31616
摘要： The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.
摘要翻译： 反射光掩模可以包括衬底，形成在衬底上的反射层，形成在反射层上并在衬底的第一部分上方的吸收图案。 补偿部分可以形成在衬底的至少第二部分上。 第二部分与第一部分相邻，并且补偿部分比吸收图案薄。
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10.发明申请Substrate including deformed portions and method of adjusting a curvature of a substrate 审中-公开包括变形部分的基板和调整基板的曲率的方法公开(公告)号：US20070224522A1
公开(公告)日：2007-09-27
申请号：US11723280
申请日：2007-03-19
申请人： Myoung-soo Lee , Dong-wan Kim , Sung-min Huh , Suk-jong Bae
发明人： Myoung-soo Lee , Dong-wan Kim , Sung-min Huh , Suk-jong Bae
CPC分类号： H01L31/18 , G03F1/60 , Y10T428/31616
摘要： Adjusting a curvature of a substrate includes forming at least one deformed portion in a predetermined region of a substrate, wherein the substrate includes a curved region before forming the at least one deformed portion, and forming the at least one deformed portion includes irradiating the substrate in the predetermined region so as to fixedly displace substrate material in the predetermined region.
摘要翻译： 调整基板的曲率包括在基板的预定区域中形成至少一个变形部分，其中基板在形成至少一个变形部分之前包括弯曲区域，并且形成至少一个变形部分包括将基板 预定区域，以便在预定区域中固定地移位基板材料。
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