公开(公告)号：US08414708B2

公开(公告)日：2013-04-09

申请号：US12846181

申请日：2010-07-29

申请人： Yun-song Jeong ,  Hyung-ho Ko ,  Sung-jae Han ,  Kyung-noh Kim ,  Chan-uk Jeon

发明人： Yun-song Jeong ,  Hyung-ho Ko ,  Sung-jae Han ,  Kyung-noh Kim ,  Chan-uk Jeon

IPC分类号： B08B3/04

CPC分类号： G03F1/82

摘要： Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

摘要翻译： 提供了一种用于清洁光掩模的方法和装置。 包括第一区域和围绕第一区域的第二区域的光掩模，设置在第一区域上的要被保护的图案和待除去的材料存在于第二区域上。 从第二区域的内部区域朝向第二区域的外部区域喷射清洁液体以除去材料，并且从第一区域向第二区域吹送气体以保护图案。

公开(公告)号：US20110023914A1

公开(公告)日：2011-02-03

申请号：US12846181

申请日：2010-07-29

申请人： Yun-song Jeong ,  Hyung-ho Ko ,  Sung-jae Han ,  Kyung-noh Kim ,  Chan-uk Jeon

发明人： Yun-song Jeong ,  Hyung-ho Ko ,  Sung-jae Han ,  Kyung-noh Kim ,  Chan-uk Jeon

IPC分类号： B08B7/04

CPC分类号： G03F1/82

摘要： Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

摘要翻译： 提供了一种用于清洁光掩模的方法和装置。 包括第一区域和围绕第一区域的第二区域的光掩模，设置在第一区域上的要被保护的图案和待除去的材料存在于第二区域上。 从第二区域的内部区域朝向第二区域的外部区域喷射清洁液体以除去材料，并且从第一区域向第二区域吹送气体以保护图案。

公开(公告)号：US20070111532A1

公开(公告)日：2007-05-17

申请号：US11600224

申请日：2006-11-16

申请人： Hyo-san Lee ,  Hyung-ho Ko ,  Chang-ki Hong ,  Sang-jun Choi

发明人： Hyo-san Lee ,  Hyung-ho Ko ,  Chang-ki Hong ,  Sang-jun Choi

IPC分类号： H01L21/00 ,  H01L21/302

CPC分类号： H01L29/78696 ,  C09K13/08 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/823807 ,  H01L21/823828 ,  H01L27/10826 ,  H01L27/10852 ,  H01L28/91 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.

公开(公告)号：US20100068631A1

公开(公告)日：2010-03-18

申请号：US12456500

申请日：2009-06-17

申请人： Han-shin Lee ,  Jae-hyuck Choi ,  Hae-young Jeong ,  Hyung-ho Ko ,  Jin-sik Jung ,  Jong-keun Oh ,  Soo-jung Kang

发明人： Han-shin Lee ,  Jae-hyuck Choi ,  Hae-young Jeong ,  Hyung-ho Ko ,  Jin-sik Jung ,  Jong-keun Oh ,  Soo-jung Kang

IPC分类号： G03F7/20 ,  G03F1/00

CPC分类号： G03F1/60 ,  G03F1/48

摘要： A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

摘要翻译： 光掩模包括离子捕获层，并且制造半导体器件的方法使用光掩模。 光掩模包括透明基板和形成在透明基板的第一区域上的离子捕获层，以捕获存在于透明基板附近的离子。 在半导体装置的制造中，通过在透明基板上形成有离子捕获层的光掩模使形成在基板上的感光膜露出，利用曝光得到的感光膜对基板进行处理。

公开(公告)号：US07176041B2

公开(公告)日：2007-02-13

申请号：US10976161

申请日：2004-10-29

申请人： Hyo-san Lee ,  Hyung-ho Ko ,  Chang-ki Hong ,  Sang-jun Choi

发明人： Hyo-san Lee ,  Hyung-ho Ko ,  Chang-ki Hong ,  Sang-jun Choi

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L29/78696 ,  C09K13/08 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/823807 ,  H01L21/823828 ,  H01L27/10826 ,  H01L27/10852 ,  H01L28/91 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.

摘要翻译： 湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率： （N掺杂Si）。 这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

公开(公告)号：US06565736B2

公开(公告)日：2003-05-20

申请号：US09945722

申请日：2001-09-05

申请人： Im-soo Park ,  Kun-tack Lee ,  Young-min Kwon ,  Sang-rok Hah ,  Woo-gwan Shim ,  Hyung-ho Ko

发明人： Im-soo Park ,  Kun-tack Lee ,  Young-min Kwon ,  Sang-rok Hah ,  Woo-gwan Shim ,  Hyung-ho Ko

IPC分类号： C02F1461

CPC分类号： C02F1/4618 ,  C02F2001/46161 ,  C02F2201/46115 ,  C02F2201/46145 ,  C02F2209/04 ,  C02F2209/06 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  Y02E60/366

摘要： A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.

摘要翻译： 在使用具有用于电解质的中间电池的3电池电解器的由电解质产生的阴极水和阳极水的半导体器件的制造中进行的湿法。 3电池电解器包括阳极电池，阴极电池和在阳极和阴极电池之间的由离子交换膜分隔的中间电池。 将去离子水供应到阳极和阴极单元中，并且中间单元填充有电解水溶液以进行电解。 含有氧化物质的阳极水或含有通过电解方法生产的还原性物质的阴极水在湿法中使用。

公开(公告)号：US07989123B2

公开(公告)日：2011-08-02

申请号：US12456500

申请日：2009-06-17

申请人： Han-shin Lee ,  Jae-hyuck Choi ,  Hae-young Jeong ,  Hyung-ho Ko ,  Jin-sik Jung ,  Jong-keun Oh ,  Soo-jung Kang

发明人： Han-shin Lee ,  Jae-hyuck Choi ,  Hae-young Jeong ,  Hyung-ho Ko ,  Jin-sik Jung ,  Jong-keun Oh ,  Soo-jung Kang

IPC分类号： G03F1/00

CPC分类号： G03F1/60 ,  G03F1/48

摘要： A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

摘要翻译： 光掩模包括离子捕获层，并且制造半导体器件的方法使用光掩模。 光掩模包括透明基板和形成在透明基板的第一区域上的离子捕获层，以捕获存在于透明基板附近的离子。 在半导体装置的制造中，通过在透明基板上形成有离子捕获层的光掩模使形成在基板上的感光膜露出，利用曝光得到的感光膜对基板进行处理。

公开(公告)号：US20050169096A1

公开(公告)日：2005-08-04

申请号：US10976161

申请日：2004-10-29

申请人： Hyo-san Lee ,  Hyung-ho Ko ,  Chang-ki Hong ,  Sang-jun Choi

发明人： Hyo-san Lee ,  Hyung-ho Ko ,  Chang-ki Hong ,  Sang-jun Choi

IPC分类号： H01L21/308 ,  C09K13/08 ,  C23F1/24 ,  G11C8/02 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/786

CPC分类号： H01L29/78696 ,  C09K13/08 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/823807 ,  H01L21/823828 ,  H01L27/10826 ,  H01L27/10852 ,  H01L28/91 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.

摘要翻译： 湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率： （N掺杂Si）。 这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

公开(公告)号：US06844229B2

公开(公告)日：2005-01-18

申请号：US09999150

申请日：2001-10-31

申请人： Moon-hee Lee ,  Woo-gwan Shim ,  Hyung-ho Ko ,  Jong-ho Chung

发明人： Moon-hee Lee ,  Woo-gwan Shim ,  Hyung-ho Ko ,  Jong-ho Chung

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10855

摘要： A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed. The method further includes the steps of: forming a conductive pad electrically connected to the semiconductor substrate and a lower insulating layer surrounding the conductive pad; and forming bit line stacks on the lower insulating layer, wherein the interlayer dielectric layer covers the bit line stacks, and the contact hole between the bit line stacks exposes the conductive pad.

摘要翻译： 提供一种制造具有电容器的存储电极的半导体器件的方法。 该方法包括以下步骤：形成穿过半导体衬底上的层间电介质层的接触孔; 形成导电插塞以填充接触孔并暴露层间电介质层的表面; 在所述层间电介质层上形成模具以暴露所述导电插塞的表面; 使导电插塞的上表面凹陷以暴露层间电介质层的侧壁的一部分; 形成电极层以覆盖凹入的导电插塞，以及层间绝缘层的侧壁和模具; 并且除去电极层的上表面以形成存储电极，直到模具露出。 该方法还包括以下步骤：形成电连接到半导体衬底的导电焊盘和围绕导电焊盘的下绝缘层; 以及在所述下绝缘层上形成位线堆叠，其中所述层间电介质层覆盖所述位线堆叠，并且所述位线堆叠之间的所述接触孔暴露所述导电焊盘。