公开(公告)号：US20120049257A1

公开(公告)日：2012-03-01

申请号：US13208997

申请日：2011-08-12

申请人： SungHo Lee ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Tae-Jung Park

发明人： SungHo Lee ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Tae-Jung Park

IPC分类号： H01L27/108 ,  H01L29/92

CPC分类号： H01L27/10814 ,  H01L27/10852 ,  H01L28/90

摘要： A DRAM device can include a plurality of capacitors that are arranged in a line in a first direction. Each of the capacitors can include an upper electrode. A contact pattern having a line shape can extend in the first direction and can be electrically connected to each of the upper electrodes. A conductor can be on the contact pattern opposite the upper electrodes and can be electrically connected to the contact pattern.

摘要翻译： DRAM装置可以包括沿第一方向排列成一行的多个电容器。 每个电容器可以包括上电极。 具有线状的接触图案可以在第一方向上延伸并且可以电连接到每个上电极。 导体可以在与上电极相对的接触图案上，并且可以电连接到接触图案。

公开(公告)号：US09054226B2

公开(公告)日：2015-06-09

申请号：US13546415

申请日：2012-07-11

申请人： Sung-Ho Lee ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Hee-Dong Park ,  Tae-Jung Park

发明人： Sung-Ho Lee ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Hee-Dong Park ,  Tae-Jung Park

IPC分类号： H01L27/108 ,  H01L49/02

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/60

摘要： A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.

摘要翻译： 半导体器件包括在基片上的多个下电极，其中每个下电极从衬底沿高度方向延伸并且包括侧壁，下电极在第一方向和第二方向彼此间隔开， 与下电极的侧壁接触的多个第一支撑层图案，第一支撑层图案沿着第一方向在第二方向上相邻的下电极之间延伸;多个第二支撑层图案，其与下部电极的侧壁接触; 电极，所述第二支撑层图案沿着所述第二方向在与所述第一方向相邻的所述下电极中的所述第二方向延伸，所述多个第二支撑层图案在所述高度方向上与所述多个第一支撑层图案间隔开。

公开(公告)号：US20130015559A1

公开(公告)日：2013-01-17

申请号：US13546415

申请日：2012-07-11

申请人： Sung-Ho LEE ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Hee-Dong Park ,  Tae-Jung Park

发明人： Sung-Ho LEE ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Hee-Dong Park ,  Tae-Jung Park

IPC分类号： H01L27/08 ,  H01L21/82

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/60

摘要： A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.

摘要翻译： 半导体器件包括在基片上的多个下电极，其中每个下电极从衬底沿高度方向延伸并且包括侧壁，下电极在第一方向和第二方向彼此间隔开， 与下电极的侧壁接触的多个第一支撑层图案，第一支撑层图案沿着第一方向在第二方向上相邻的下电极之间延伸;多个第二支撑层图案，其与下部电极的侧壁接触; 电极，所述第二支撑层图案沿着所述第二方向在与所述第一方向相邻的所述下电极中的所述第二方向延伸，所述多个第二支撑层图案在所述高度方向上与所述多个第一支撑层图案间隔开。

公开(公告)号：US5510682A

公开(公告)日：1996-04-23

申请号：US361740

申请日：1994-12-22

申请人： Tae-Jung Park

发明人： Tae-Jung Park

IPC分类号： H04N9/29 ,  H01J29/56

CPC分类号： H04N9/29

摘要： A magnetism-erasing circuit for use in cathode ray tubes of portable televisions or the like for erasing the magnetism from the cathode ray tubes is disclosed. The magnetism-erasing circuit includes: a) automatic trigger for an automatically generating trigger signals when a D-C supply is initially applied to the magnetism-erasing circuit, b) trigger detecting means, c) delay and second trigger means for generating second trigger pulses which are delayed by a specified time interval by the detected trigger signals from the trigger detecting means, and d) means for controlling the driving of the magnetism-coil by applying currents to a magnetism-erasing coil. The magnetism-erasing circuit of the present invention further includes manual trigger means for manually generating trigger signals under the condition where a D-C supply has already been applied to the circuit.

摘要翻译： 公开了一种用于从用于从阴极射线管中擦除磁性的便携式电视机等的阴极射线管中使用的擦除电路。 磁性擦除电路包括：a）当直流电源最初施加到磁性擦除电路时自动产生触发信号的自动触发，b）触发检测装置，c）延迟和第二触发装置，用于产生第二触发脉冲， 通过来自触发检测装置的检测到的触发信号被延迟指定的时间间隔，以及d）用于通过向磁性擦除线圈施加电流来控制磁性线圈的驱动的装置。 本发明的除磁电路还包括手动触发装置，用于在D-C电源已经被施加到电路的条件下手动产生触发信号。