公开(公告)号：US20090079974A1

公开(公告)日：2009-03-26

申请号：US12328123

申请日：2008-12-04

申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

IPC分类号： G01N21/88

CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

公开(公告)号：US07767956B2

公开(公告)日：2010-08-03

申请号：US12328123

申请日：2008-12-04

申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

IPC分类号： G06M7/00 ,  H01J40/14

CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

公开(公告)号：US06987572B2

公开(公告)日：2006-01-17

申请号：US10366838

申请日：2003-02-14

申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

IPC分类号： G01B11/24

CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

公开(公告)号：US07462814B2

公开(公告)日：2008-12-09

申请号：US11345145

申请日：2006-02-01

申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

IPC分类号： G06M7/00 ,  H01J40/14

CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

公开(公告)号：US06689519B2

公开(公告)日：2004-02-10

申请号：US09849622

申请日：2001-05-04

申请人： Kyle A. Brown ,  Matt Hankinson ,  Ady Levy ,  Suresh Lakkapragada

发明人： Kyle A. Brown ,  Matt Hankinson ,  Ady Levy ,  Suresh Lakkapragada

IPC分类号： G03F900

CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

公开(公告)号：US20060138366A1

公开(公告)日：2006-06-29

申请号：US11345145

申请日：2006-02-01

申请人： Suresh Lakkapragada ,  Kyle Brown ,  Matt Hankinson ,  Ady Levy

发明人： Suresh Lakkapragada ,  Kyle Brown ,  Matt Hankinson ,  Ady Levy

IPC分类号： G01N21/86

CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.