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    Methods and systems for lithography process control
    2.
    发明授权
    Methods and systems for lithography process control 有权
    光刻过程控制的方法和系统

    公开(公告)号：US07767956B2

    公开(公告)日：2010-08-03

    申请号：US12328123

    申请日：2008-12-04

    申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    IPC分类号： G06M7/00 ,  H01J40/14

    CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

    摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

    摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

    METHODS AND SYSTEMS FOR LITHOGRAPHY PROCESS CONTROL
    3.
    发明申请
    METHODS AND SYSTEMS FOR LITHOGRAPHY PROCESS CONTROL 有权
    LITHOGRAPHY PROCESS CONTROL的方法和系统

    公开(公告)号：US20090079974A1

    公开(公告)日：2009-03-26

    申请号：US12328123

    申请日：2008-12-04

    申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    IPC分类号： G01N21/88

    CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

    摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

    摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

    Methods and systems for lithography process control
    5.
    发明授权
    Methods and systems for lithography process control 有权
    光刻过程控制的方法和系统

    公开(公告)号：US07462814B2

    公开(公告)日：2008-12-09

    申请号：US11345145

    申请日：2006-02-01

    申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    IPC分类号： G06M7/00 ,  H01J40/14

    CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

    摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

    摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

    Methods and systems for lithography process control
    6.
    发明授权
    Methods and systems for lithography process control 有权
    光刻过程控制的方法和系统

    公开(公告)号：US06689519B2

    公开(公告)日：2004-02-10

    申请号：US09849622

    申请日：2001-05-04

    申请人： Kyle A. Brown ,  Matt Hankinson ,  Ady Levy ,  Suresh Lakkapragada

    发明人： Kyle A. Brown ,  Matt Hankinson ,  Ady Levy ,  Suresh Lakkapragada

    IPC分类号： G03F900

    CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

    摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

    摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

    Method and apparatus for the production of process sensitive lithographic features
    8.
    发明授权
    Method and apparatus for the production of process sensitive lithographic features 有权
    用于生产敏感光刻特征的方法和装置

    公开(公告)号：US06673638B1

    公开(公告)日：2004-01-06

    申请号：US10058572

    申请日：2002-01-28

    申请人： Joseph J. Bendik ,  Matt Hankinson

    发明人： Joseph J. Bendik ,  Matt Hankinson

    IPC分类号： H01L2166

    CPC分类号： G03F7/70625 ,  G03F7/70641

    摘要： A method for controlling the variation in process parameters using test structures sensitized to process parameter changes. Wavefront engineering techniques are used to make features of the test structure more sensitive to process changes. Focus and exposure parameters are adjusted in response to the measurements of the test structures. In another embodiment, the wavefront engineering features are placed to permit the test structure appearing on the reticle out of focus. The wavefront engineering feature is an OPC technique applied to the test structure to modify it. The OPC features are applied in an asymmetrical manner to the test structure and enable identifying the direction of process focus changes.

    摘要翻译： 使用对过程参数变化敏感的测试结构来控制工艺参数变化的方法。 波前工程技术用于使测试结构的特征对过程变化更敏感。 响应于测试结构的测量，调整焦点和曝光参数。 在另一个实施例中，放置波前工程特征以允许测试结构出现在掩模版以外的焦点上。 波前工程功能是应用于测试结构进行修改的OPC技术。 OPC特征以不对称的方式应用于测试结构，并且能够识别过程焦点变化的方向。