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    METHODS AND SYSTEMS FOR LITHOGRAPHY PROCESS CONTROL
    1.
    发明申请
    METHODS AND SYSTEMS FOR LITHOGRAPHY PROCESS CONTROL 有权
    LITHOGRAPHY PROCESS CONTROL的方法和系统

    公开(公告)号：US20090079974A1

    公开(公告)日：2009-03-26

    申请号：US12328123

    申请日：2008-12-04

    申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    IPC分类号： G01N21/88

    CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

    摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

    摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

    Methods and systems for lithography process control
    2.
    发明授权
    Methods and systems for lithography process control 有权
    光刻过程控制的方法和系统

    公开(公告)号：US07767956B2

    公开(公告)日：2010-08-03

    申请号：US12328123

    申请日：2008-12-04

    申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    IPC分类号： G06M7/00 ,  H01J40/14

    CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

    摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

    摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

    Methods and systems for lithography process control
    4.
    发明授权
    Methods and systems for lithography process control 有权
    光刻过程控制的方法和系统

    公开(公告)号：US07462814B2

    公开(公告)日：2008-12-09

    申请号：US11345145

    申请日：2006-02-01

    申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

    IPC分类号： G06M7/00 ,  H01J40/14

    CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

    摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

    摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

    Methods and systems for lithography process control
    5.
    发明授权
    Methods and systems for lithography process control 有权
    光刻过程控制的方法和系统

    公开(公告)号：US06689519B2

    公开(公告)日：2004-02-10

    申请号：US09849622

    申请日：2001-05-04

    申请人： Kyle A. Brown ,  Matt Hankinson ,  Ady Levy ,  Suresh Lakkapragada

    发明人： Kyle A. Brown ,  Matt Hankinson ,  Ady Levy ,  Suresh Lakkapragada

    IPC分类号： G03F900

    CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

    摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

    摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

    Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
    10.
    发明授权
    Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation 失效
    用于确定在离子注入之前，期间或之后的样品的特性的方法和系统

    公开(公告)号：US06812045B1

    公开(公告)日：2004-11-02

    申请号：US09956842

    申请日：2001-09-20

    申请人： Mehrdad Nikoonahad ,  Ady Levy ,  Kyle A. Brown ,  Gary Bultman ,  Dan Wack ,  John Fielden

    发明人： Mehrdad Nikoonahad ,  Ady Levy ,  Kyle A. Brown ,  Gary Bultman ,  Dan Wack ,  John Fielden

    IPC分类号： H01L2166

    CPC分类号： G03F7/70616 ,  G01N21/636 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  G03F7/707 ,  G03F7/70708 ,  H01J2237/31701

    摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a characteristic of a specimen prior to, during, or subsequent to ion implantation. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

    摘要翻译： 提供了用于监测半导体制造工艺的方法和系统。 系统可以包括被配置为支撑样本并耦合到测量装置的台。 测量装置可以包括照明系统和检测系统。 照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。 例如，该系统可以被配置成确定样品的多个性质，包括但不限于在离子注入之前，期间或之后的样品的特性。 以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。