公开(公告)号：US20110300782A1

公开(公告)日：2011-12-08

申请号：US13210018

申请日：2011-08-15

申请人： Suresh Ramarajan

发明人： Suresh Ramarajan

IPC分类号： B24B53/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, an end effector for conditioning a polishing pad includes a member having a first surface and a plurality of contact elements projecting from the first surface. The member also includes a plurality of apertures configured to flow conditioning solution to the polishing pad. The apertures can extend from the first surface to a second surface opposite the first surface. The member can further include a manifold that is in fluid communication with the apertures. In another embodiment, a conditioner for conditioning the polishing pad includes an arm having at least one spray nozzle configured to spray conditioning solution onto the polishing pad and an end effector coupled to the arm. The end effector includes a first surface and a plurality of contact elements projecting from the first surface.

摘要翻译： 本文公开了用于调理用于抛光微器件工件的抛光垫的调节装置和方法。 在一个实施例中，用于调节抛光垫的末端执行器包括具有第一表面和从第一表面突出的多个接触元件的构件。 该构件还包括多个孔，其构造成将调理溶液流动到抛光垫。 孔可以从第一表面延伸到与第一表面相对的第二表面。 该构件还可以包括与孔流体连通的歧管。 在另一个实施例中，用于调节抛光垫的调节器包括具有至少一个喷雾喷嘴的臂，所述至少一个喷嘴构造成将调理溶液喷射到抛光垫上以及与臂相连的端部执行器。 末端执行器包括从第一表面突出的第一表面和多个接触元件。

公开(公告)号：US07453152B2

公开(公告)日：2008-11-18

申请号：US11475585

申请日：2006-06-27

申请人： Suresh Ramarajan

发明人： Suresh Ramarajan

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： C23C8/80 ,  C23C8/02 ,  Y10T428/24322 ,  Y10T428/31678

摘要： The present technique is directed toward the fabrication of integrated circuits and provides for the production of a hardened metal layer on the surface of a semiconductor wafer to reduce the amount of material removed during chemical mechanical planarization (CMP) of the metal layer. This hardened layer may be produced, for example, by oxidizing the metal surface and/or coating the metal surface with a polymer. In one implementation, a relatively thick and dense oxide layer is formed on the wafer metal surface prior to CMP, by injecting, for example, an oxidant, such as oxygen or ozone, near the end of an annealing cycle. The hardened metal beneficially protects recessed regions from CMP chemical attack and CMP pad deformation, and thus reduces the thickness-to-planarity, dishing, and waste generation realized during CMP.

摘要翻译： 本技术涉及集成电路的制造，并提供在半导体晶片的表面上生产硬化的金属层，以减少在金属层的化学机械平坦化（CMP）期间除去的材料的量。 这种硬化层可以例如通过用聚合物氧化金属表面和/或涂覆金属表面来制备。 在一个实施方案中，在CMP之前，通过在退火循环结束附近注入例如氧化剂或臭氧等氧化剂，在晶片金属表面上形成相对厚且致密的氧化物层。 硬化金属有利地保护凹陷区域免受CMP化学侵蚀和CMP焊盘变形，从而减少CMP期间实现的厚度 - 平面度，凹陷和废物产生。

公开(公告)号：US20050139292A1

公开(公告)日：2005-06-30

申请号：US10750734

申请日：2003-12-31

申请人： Suresh Ramarajan

发明人： Suresh Ramarajan

IPC分类号： C23C8/02 ,  C23C8/80

CPC分类号： C23C8/80 ,  C23C8/02 ,  Y10T428/24322 ,  Y10T428/31678

摘要： The present technique is directed toward the fabrication of integrated circuits and provides for the hardening (modification) of a metal layer surface of a semiconductor wafer to reduce the amount of material removed during chemical mechanical planarization (CMP) of the metal layer. This hardening may be accomplished, for example, by oxidizing the metal surface and/or coating the metal surface with a polymer. In one implementation, a relatively thick and dense oxide layer is formed on the wafer metal surface prior to CMP, by injecting, for example, an oxidant, such as oxygen or ozone, near the end of an annealing cycle. Such hardening of the surface beneficially protects recessed regions from CMP chemical attack and CMP pad deformation, and thus reduces the thickness-to-planarity, dishing, and waste generation realized during CMP.

摘要翻译： 本技术涉及集成电路的制造，并提供半导体晶片的金属层表面的硬化（修饰），以减少在金属层的化学机械平坦化（CMP）期间去除的材料的量。 这种硬化可以例如通过用聚合物氧化金属表面和/或涂覆金属表面来实现。 在一个实施方案中，在CMP之前，通过在退火循环结束附近注入例如氧化剂或臭氧等氧化剂，在晶片金属表面上形成相对厚且致密的氧化物层。 表面的这种硬化有利地保护凹陷区域免受CMP化学侵蚀和CMP焊盘变形，从而减少CMP期间实现的厚度 - 平面度，凹陷和废物产生。

公开(公告)号：US08419906B2

公开(公告)日：2013-04-16

申请号：US12234783

申请日：2008-09-22

申请人： Suresh Ramarajan ,  Whonchee Lee

发明人： Suresh Ramarajan ,  Whonchee Lee

IPC分类号： C25D17/14 ,  C25D17/12 ,  C25D17/06 ,  C25D17/00

CPC分类号： C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

摘要： Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.

摘要翻译： 公开了包括多个电极的电镀系统，可操作地耦合到多个电极的电源，用于承载要形成金属特征的基板的压板和电极支撑件。 电极支撑件可以被配置用于将电极组件悬挂在设置在压板上的衬底的上表面上，该衬底的上表面与衬底间隔开并与之对准，或者当施加电压时，将电极组件支撑在衬底上的静止位置 跨越多个电极。 电极可以相邻，相互间隔并且电隔离并且串联连接，以便当在其上施加电压时可以相反地极化，或者可以在电压施加到其上时具有交替的极性。

公开(公告)号：US07708622B2

公开(公告)日：2010-05-04

申请号：US11092157

申请日：2005-03-28

申请人： Suresh Ramarajan

发明人： Suresh Ramarajan

IPC分类号： B24B53/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, an end effector for conditioning a polishing pad includes a member having a first surface and a plurality of contact elements projecting from the first surface. The member also includes a plurality of apertures configured to flow conditioning solution to the polishing pad. The apertures can extend from the first surface to a second surface opposite the first surface. The member can further include a manifold that is in fluid communication with the apertures. In another embodiment, a conditioner for conditioning the polishing pad includes an arm having at least one spray nozzle configured to spray conditioning solution onto the polishing pad and an end effector coupled to the arm. The end effector includes a first surface and a plurality of contact elements projecting from the first surface.

摘要翻译： 本文公开了用于调理用于抛光微器件工件的抛光垫的调节装置和方法。 在一个实施例中，用于调节抛光垫的末端执行器包括具有第一表面和从第一表面突出的多个接触元件的构件。 该构件还包括多个孔，其构造成将调理溶液流动到抛光垫。 孔可以从第一表面延伸到与第一表面相对的第二表面。 该构件还可以包括与孔流体连通的歧管。 在另一个实施例中，用于调节抛光垫的调节器包括具有至少一个喷雾喷嘴的臂，所述至少一个喷嘴构造成将调理溶液喷射到抛光垫上以及与臂相连的端部执行器。 末端执行器包括从第一表面突出的第一表面和多个接触元件。

公开(公告)号：US07435324B2

公开(公告)日：2008-10-14

申请号：US10933823

申请日：2004-09-02

申请人： Suresh Ramarajan ,  Whonchee Lee

发明人： Suresh Ramarajan ,  Whonchee Lee

IPC分类号： C25D5/02

CPC分类号： C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

摘要： A method of selectively electroplating metal features on a semiconductor substrate having a conductive surface. An electrode assembly that includes a plurality of adjacent, mutually spaced and electrically isolated electrodes connected in series so as to be oppositely polarized when a voltage is applied thereacross is positioned over the substrate and an electrolyte solution is applied to the conductive surface. The electrode assembly and the conductive surface may be positioned in close proximity to, but without contacting, one another. A voltage is applied to the electrode assembly, which causes a metal film to selectively form on portions of the conductive surface that are positioned beneath an electrode exhibiting a positive polarity and, thus, negatively charged. Portions of the conductive surface positioned beneath electrodes exhibiting a negative polarity remain unplated. A DC power supply may be employed, the electrode polarity in such case being fixed or, alternatively, an AC power supply may be employed so as to cyclically vary electrode polarity and cause metal deposition beneath each electrode. An electroplating system is also disclosed.

摘要翻译： 一种在具有导电表面的半导体衬底上选择性地电镀金属特征的方法。 一种电极组件，其包括多个相邻的，相互间隔的和电隔离的电极，其串联连接以便在其上施加电压时相反地极化，并且将电解质溶液施加到导电表面。 电极组件和导电表面可以彼此靠近但不接触地定位。 电压被施加到电极组件，这导致金属膜选择性地形成在导电表面的位于显示正极性的电极下方并因此带负电的部分上。 位于显示负极性的电极下方的导电表面的部分保持未镀层。 可以使用直流电源，在这种情况下，电极极性是固定的，或者可以采用交流电源，以循环地改变电极极性，并在每个电极下方引起金属沉积。 还公开了电镀系统。

公开(公告)号：US20060240221A1

公开(公告)日：2006-10-26

申请号：US11475585

申请日：2006-06-27

申请人： Suresh Ramarajan

发明人： Suresh Ramarajan

IPC分类号： B32B3/10 ,  B32B13/04 ,  B32B15/04

CPC分类号： C23C8/80 ,  C23C8/02 ,  Y10T428/24322 ,  Y10T428/31678

摘要： The present technique is directed toward the fabrication of integrated circuits and provides for the production of a hardened metal layer on the surface of a semiconductor wafer to reduce the amount of material removed during chemical mechanical planarization (CMP) of the metal layer. This hardened layer may be produced, for example, by oxidizing the metal surface and/or coating the metal surface with a polymer. In one implementation, a relatively thick and dense oxide layer is formed on the wafer metal surface prior to CMP, by injecting, for example, an oxidant, such as oxygen or ozone, near the end of an annealing cycle. The hardened metal beneficially protects recessed regions from CMP chemical attack and CMP pad deformation, and thus reduces the thickness-to-planarity, dishing, and waste generation realized during CMP.

摘要翻译： 本技术涉及集成电路的制造，并提供在半导体晶片的表面上生产硬化的金属层，以减少在金属层的化学机械平坦化（CMP）期间除去的材料的量。 该硬化层可以例如通过用聚合物氧化金属表面和/或涂覆金属表面来制备。 在一个实施方案中，在CMP之前，通过在退火循环结束附近注入例如氧化剂或臭氧等氧化剂，在晶片金属表面上形成相对厚且致密的氧化物层。 硬化金属有利地保护凹陷区域免受CMP化学侵蚀和CMP焊盘变形，从而减少CMP期间实现的厚度 - 平面度，凹陷和废物产生。

公开(公告)号：US20070000786A1

公开(公告)日：2007-01-04

申请号：US11516065

申请日：2006-09-06

申请人： Suresh Ramarajan ,  Whonchee Lee

发明人： Suresh Ramarajan ,  Whonchee Lee

IPC分类号： C25D5/02

CPC分类号： C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

摘要： A method of selectively depositing metal features on a conductive surface of a substrate. An electrode assembly that includes a plurality of electrodes connected in series so as to be oppositely polarized when a voltage is applied thereacross is positioned over the conductive surface of the substrate. The plurality of electrodes is in close proximity to, but does not contact, the conductive surface of the substrate. Positively charged portions and negatively charged portions of the conductive surface of the substrate are created and metal ions are deposited on the negatively charged portions.

摘要翻译： 一种在衬底的导电表面上选择性地沉积金属特征的方法。 电极组件包括多个电极，其串联连接以便当在其上施加电压时被相反地极化，所述电极组件位于衬底的导电表面上方。 多个电极与衬底的导电表面紧密接近但不接触。 产生基板的导电表面的正电荷部分和带负电荷的部分，并且在带负电的部分上沉积金属离子。

公开(公告)号：US20060170413A1

公开(公告)日：2006-08-03

申请号：US11376959

申请日：2006-03-16

申请人： Suresh Ramarajan

发明人： Suresh Ramarajan

IPC分类号： G01P3/46

CPC分类号： G01P15/003 ,  G01P15/105

摘要： Apparatuses and methods for monitoring microfeature workpiece rotation during processing, such as brushing, by monitoring characteristics corresponding to a state of a magnetic field proximate to the rotating microfeature workpiece are disclosed herein. The characteristic can depend on the relative motion between the magnetic field and the conductive material of the microfeature workpiece. The characteristic can include the strength of the magnetic field, current in an electromagnet circuit used to create the magnetic field, force exerted on the magnetic field source, or movement of the magnetic field source. The apparatus can include a feedback control device to adjust the rotation speed of the microfeature workpiece based on the characteristic detected.

摘要翻译： 本文公开了通过监视对应于靠近旋转微特征工件的磁场的状态的特性来监视处理过程中的微特征工件旋转的装置和方法，例如刷涂。 该特性可以取决于微型工件的磁场和导电材料之间的相对运动。 该特性可以包括磁场的强度，用于产生磁场的电磁体电路中的电流，施加在磁场源上的力或磁场源的移动。 该装置可以包括反馈控制装置，用于基于检测到的特性来调节微特征工件的转速。

公开(公告)号：US20060042953A1

公开(公告)日：2006-03-02

申请号：US10933823

申请日：2004-09-02

申请人： Suresh Ramarajan ,  Whonchee Lee

发明人： Suresh Ramarajan ,  Whonchee Lee

IPC分类号： C25D5/02

CPC分类号： C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

摘要： A method of selectively electroplating metal features on a semiconductor substrate having a conductive surface. An electrode assembly that includes a plurality of adjacent, mutually spaced and electrically isolated electrodes connected in series so as to be oppositely polarized when a voltage is applied thereacross is positioned over the substrate and an electrolyte solution is applied to the conductive surface. The electrode assembly and the conductive surface may be positioned in close proximity to, but without contacting, one another. A voltage is applied to the electrode assembly, which causes a metal film to selectively form on portions of the conductive surface that are positioned beneath an electrode exhibiting a positive polarity and, thus, negatively charged. Portions of the conductive surface positioned beneath electrodes exhibiting a negative polarity remain unplated. A DC power supply may be employed, the electrode polarity in such case being fixed or, alternatively, an AC power supply may be employed so as to cyclically vary electrode polarity and cause metal deposition beneath each electrode. An electroplating system is also disclosed.

摘要翻译： 一种在具有导电表面的半导体衬底上选择性地电镀金属特征的方法。 一种电极组件，其包括多个相邻的，相互间隔的和电隔离的电极，其串联连接，以便在其上施加电压时相反地极化，并且电解质溶液被施加到导电表面上。 电极组件和导电表面可以彼此靠近但不接触地定位。 电压被施加到电极组件，这导致金属膜选择性地形成在导电表面的位于显示正极性的电极下方并因此带负电的部分上。 位于显示负极性的电极下方的导电表面的部分保持未镀层。 可以使用直流电源，在这种情况下，电极极性是固定的，或者可以采用交流电源，以循环地改变电极极性，并在每个电极下方引起金属沉积。 还公开了电镀系统。