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公开(公告)号：US4719959A
公开(公告)日：1988-01-19
申请号：US045771
申请日：1987-04-29
IPC分类号： B22D11/00 , B22D11/04 , B22D11/041 , B22D11/049
CPC分类号： B22D11/006
摘要： The apparatus comprises an annular water-cooled metallic mold having open upper and lower ends, a core member located in the inner space of the mold to form therebetween an annular casting passage for solidifying therein the molten metal supplied in the casting passage, and a movable supporting base member adapted to initially close the lower end of the casting passage to support the molten metal therein and then to be moved downwardly apart from the lower end as the metal in the casting passage solidifies so as to permit the solidified metal to be pulled out from the casting passage for continuously producing the hollow metallic ingot. The core member comprises a heat-insulating member having a molten metal receiving vessel mounted thereon with at least one molten metal conducting passage formed therein communicating with the casting passage so as to supply the molten metal from the vessel to the casting passage, and a casting member made of graphite or a carbonic material and secured to the lower side of the heat-insulating member with the outer peripheral surface being tapered downwardly inwardly to form a casting face.
摘要翻译： 该装置包括具有开口的上端和下端的环形水冷金属模，位于模具的内部空间中的芯构件，用于在其间形成环形铸造通道，用于在其中固化供应在铸造通道中的熔融金属， 支撑基座构件适于最初关闭铸造通道的下端以支撑其中的熔融金属，然后随着铸造通道中的金属固化而向下移动，从而允许固化的金属被拉出 从用于连续生产中空金属锭的铸造通道。 芯部件包括一个绝热构件，其上安装有熔融金属接收容器，其上形成有至少一个熔融金属导电通道，其与铸造通道连通，以将熔融金属从容器供应到铸造通道， 由石墨或碳质材料制成的构件，并且固定到隔热构件的下侧，外周表面向内锥形向下成形以形成浇铸面。
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公开(公告)号：US4734127A
公开(公告)日：1988-03-29
申请号：US656998
申请日：1984-10-02
申请人： Toshiaki Iuchi , Kaoru Sugita , Eikichi Sagisaka , Norio Tuchihashi , Terumi Kanamori , Masaharu Sugiyama
发明人： Toshiaki Iuchi , Kaoru Sugita , Eikichi Sagisaka , Norio Tuchihashi , Terumi Kanamori , Masaharu Sugiyama
IPC分类号： C22B21/06
CPC分类号： C22B21/06
摘要： A process for refining aluminum using a segregation solidification process under a positive pressure inert gas protecting atmosphere comprising, maintaining the temperature of molten aluminum in the vessel by a plurality of electric heater sections arranged around the periphery of said vessel in vertically superposed relationship to each other, cooling a narrow peripheral portion of the inner surface of said vessel beneath the level of the molten aluminum therein by means of a peripheral cooling section arranged around the periphery of said vessel between adjacent heater sections to crystallize the molten aluminum onto said peripheral portion of the inner surface of said vessel, scraping off the refined and solidified aluminum on said peripheral portion by scraping and tamping means having a cross-sectional configuration complementary to that of the inner surface of said vessel, tamping the heaped aluminum by said scraping and tamping means, and deenergizing some of said heater sections located at positions around the solidified heap of aluminum.
摘要翻译： 一种在正压惰性气体保护气氛下使用偏析凝固法精炼铝的方法，包括：通过以彼此垂直重叠的关系布置在所述容器的周围的多个电加热器部分来保持容器内的熔融铝的温度 通过围绕相邻加热器部分之间的所述容器的周边布置的周边冷却部分将所述容器的内表面的窄边缘部分冷却在其内的熔融铝的水平面上，以将熔融铝结晶到所述熔融铝的周边部分上 所述容器的内表面通过刮削和捣实装置刮除所述周边部分上的精炼和固化的铝，该装置具有与所述容器的内表面互补的横截面构造，通过所述刮削和捣实装置捣固堆积的铝， 并断开所述加热器部分中的一些 s位于固化铝堆周围的位置。
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3.发明授权公开(公告)号：US06280293B1
公开(公告)日：2001-08-28
申请号：US09418979
申请日：1999-10-14
申请人： Kouji Minami , Mari Kato , Masaharu Sugiyama
发明人： Kouji Minami , Mari Kato , Masaharu Sugiyama
IPC分类号： B24B4900
CPC分类号： B24B49/16 , B24B19/226 , B24B41/067 , G02B6/3851
摘要： An end face polishing apparatus comprises a jig plate for supporting a workpiece, a polishing member for polishing an end face of the workpiece, and a movable lever connected to the jig plate. A pressurizing section presses the lever to bring the end face of the workpiece into pressure contact with the polishing member. The pressurizing section has a first spring member for biasing the lever in a first direction, a pressurizing head for biasing the lever in a second direction opposite to the first direction, a second spring member for biasing the pressurizing head in the second direction, and a pressure sensor disposed between the pressurizing head and the lever for detecting a pressure applied by the end face of the ferrule onto the polishing member when the lever is pressed by the pressurizing section. A pressurization control section controls the pressure applied by the end face of the workpiece onto the polishing member when the lever is pressed by the pressurizing section.
摘要翻译： 端面抛光装置包括用于支撑工件的夹具板，用于抛光工件的端面的抛光构件和连接到夹具板的可动杆。 加压部按压操作杆使工件的端面与抛光部件压力接触。 所述加压部具有用于沿第一方向偏压所述杆的第一弹簧部件，用于沿与所述第一方向相反的第二方向偏压所述杠杆的加压头，用于沿所述第二方向偏压所述加压头的第二弹簧部件， 压力传感器设置在加压头和杠杆之间，用于当杠杆被加压部分按压时，检测由套圈的端面施加到抛光构件上的压力。 加压控制部，当通过加压部按压杆时，将由工件的端面施加的压力控制在研磨部件上。
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公开(公告)号：US20070163995A1
公开(公告)日：2007-07-19
申请号：US11567384
申请日：2006-12-06
IPC分类号： C23F1/00 , B44C1/22 , H01L21/302 , H01L21/306
CPC分类号： H01L21/31144 , H01J37/32082 , H01J2237/3347 , H01L21/31116 , H01L21/76816
摘要： In etching an insulating film such as an SiOC film or the like, in order to suppress a diameter of a hole or a width of a groove, a pre-processing is performed before performing the etching. In the pre-processing, a processing gas containing CF4 gas and CH3F gas is converted into a plasma, and an opening size of an opening portion of a resist mask is decreased by depositing deposits at a sidewall thereof by using the plasma. Further, in etching the SiOC film, a processing gas containing CF4 gas, CH3F gas, and N2 gas is converted into a plasma by supplying a processing gas atmosphere by using a first high frequency wave for generating the plasma, wherein the electric power divided by a surface area of a substrate becomes over 1500 W/70685.8 mm2 (a surface area of a 300 mm wafer), and then the SiOC film is etched.
摘要翻译： 在蚀刻诸如SiOC膜等的绝缘膜时，为了抑制孔的直径或槽的宽度，在进行蚀刻之前进行预处理。 在预处理中，含有CF 4气体和CH 3 F气体的处理气体被转换为等离子体，并且抗蚀剂掩模的开口部分的开口尺寸 通过使用等离子体在其侧壁沉积沉积物而降低。 此外，在蚀刻SiOC膜时，将含有CF 4气体，CH 3 F气体和N 2气体的处理气体转化为 通过使用用于产生等离子体的第一高频波提供处理气体气氛的等离子体，其中被基板的表面积分割的电力超过1500W / 70685.8mm 2（表面积 的300mm晶片），然后蚀刻SiOC膜。
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公开(公告)号：US06830501B2
公开(公告)日：2004-12-14
申请号：US10062752
申请日：2002-02-01
IPC分类号： B24B722
CPC分类号： G02B6/25 , B24B19/226 , B24B41/047 , G02B6/3863
摘要： An end face polishing device has a first revolution shaft mounted for undergoing revolving movement about a first axis, a rotational shaft mounted for undergoing rotation about a second axis eccentric from the first axis, and a second revolution shaft mounted for undergoing revolving movement about a third axis eccentric from the second axis. A polishing disc is connected to the second revolution shaft for revolving movement therewith.
摘要翻译： 端面抛光装置具有安装成围绕第一轴线进行旋转运动的第一旋转轴，安装成围绕第一轴线偏心的第二轴线旋转的旋转轴和安装成围绕第三轴线旋转运动的第二旋转轴 轴从第二轴偏心。 抛光盘连接到第二旋转轴用于与其旋转运动。
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公开(公告)号：US07488689B2
公开(公告)日：2009-02-10
申请号：US11290481
申请日：2005-12-01
IPC分类号： H01L21/302
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32935 , H01L21/32136 , H01L21/6831
摘要： In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.
摘要翻译： 在真空处理室中，对具有至少形成为规定图案的掩模层的被处理物和作为被蚀刻的层形成在掩模层下方的Ti层进行蚀刻。 在蚀刻期间，通过使用在室内压为4Pa以下的含氟化合物的蚀刻气体的等离子体，进行第一等离子体处理来蚀刻Ti层。 随后，在完成第一等离子体处理之后，通过使用清洁气体的等离子体进行干洗的第二等离子体处理。 此时，除去包含在等离子体处理期间产生的Ti化合物的沉积物。
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公开(公告)号：US20060118520A1
公开(公告)日：2006-06-08
申请号：US11290481
申请日：2005-12-01
IPC分类号： C23F1/00 , B44C1/22 , H01L21/306
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32935 , H01L21/32136 , H01L21/6831
摘要： In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.
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8.发明授权Polishing device, end face polishing apparatus having polishing device, and end face polishing method 失效抛光装置，具有抛光装置的端面抛光装置和端面抛光方法公开(公告)号：US06302773B1
公开(公告)日：2001-10-16
申请号：US09360774
申请日：1999-07-26
申请人： Mari Kato , Kouji Minami , Masaharu Sugiyama
发明人： Mari Kato , Kouji Minami , Masaharu Sugiyama
IPC分类号： B24B700
CPC分类号： B24B37/11 , B23Q3/15713 , B24B19/226 , B24B41/005
摘要： An end face polishing apparatus comprises a polishing board and a jig board for supporting workpieces. A polishing member is detachably arranged on the polishing board and has a polishing film for polishing end faces of the workpieces while the workpieces are supported by the jig board. A first holding device holdings unused polishing members each having a new polishing film preliminarily attached thereto. At least one second holding device holds used polishing members which have been removed from the polishing board. A polishing member exchanging device is mounted for linear movement in horizontal and vertical directions for exchanging a used polishing member arranged on the polishing board with an unused polishing member by seizing the used polishing member from the polishing board and conveying the used polishing member to the second holding device, and by taking an unused polishing member from the first holding device and placing the unused polishing member on the polishing board.
摘要翻译： 端面抛光装置包括用于支撑工件的抛光板和夹具板。 抛光构件可拆卸地布置在抛光板上，并且具有用于抛光工件的端面的抛光膜，同时工件由夹具板支撑。 第一保持装置保持预先安装有新抛光膜的未使用的抛光构件。 至少一个第二保持装置保持已经从抛光板移除的使用的抛光构件。 抛光构件交换装置安装成在水平和垂直方向上线性运动，用于通过从抛光板上抓住所使用的抛光构件将布置在抛光板上的用过的抛光构件与未使用的抛光构件进行交换，并将所使用的抛光构件传送到第二 并且通过从第一保持装置取出未使用的抛光构件并将未使用的抛光构件放置在抛光板上。
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9.发明申请Magnetostrictive Film, Magnetostrictive Element, Torque Sensor, Force Sensor, Pressure Sensor, And Manufacturing Method Therefor 有权磁致伸缩膜，磁致伸缩元件，扭矩传感器，力传感器，压力传感器及其制造方法公开(公告)号：US20120128970A1
公开(公告)日：2012-05-24
申请号：US13388528
申请日：2010-07-30
申请人： Yoshitsugu Motoe , Koji Nakashima , Tomohito Ishikawa , Masaharu Sugiyama , Takanori Igarashi , Hiroyuki Wakiwaka , Akihiro Makino , Akihisa Inoue
发明人： Yoshitsugu Motoe , Koji Nakashima , Tomohito Ishikawa , Masaharu Sugiyama , Takanori Igarashi , Hiroyuki Wakiwaka , Akihiro Makino , Akihisa Inoue
CPC分类号： G01L3/102 , C22C33/003 , C22C45/02 , C23C4/06 , G01L3/103 , G01L3/105 , G01R33/18 , H01F10/131 , H01L41/125 , H01L41/20 , H01L41/47 , Y10T428/265
摘要： For providing a magnetostrictive film that can exhibit high magnetostrictive properties in the vicinity of zero magnetic field and their manufacturing methods, a magnetostrictive film thermal sprayed on an object under test includes a metallic glass film subjected to thermal processing at a temperature lower than the glass transition temperature and not lower than the Curie point, and shows a linearity between the magnetic field and the magnetostriction in at least a part of the magnetic field from −15 kA/m to +15 kA/m (both inclusive).
摘要翻译： 为了提供在零磁场附近可表现出高的磁致伸缩特性的磁致伸缩薄膜及其制造方法，热喷涂在被测物体上的磁致伸缩薄膜包括在比玻璃化转变温度低的温度下进行热处理的金属玻璃薄膜 温度并且不低于居里点，并且在从-15kA / m到+15kA / m（包括端值）的至少一部分磁场中显示出磁场和磁致伸缩之间的线性。
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公开(公告)号：US06817925B2
公开(公告)日：2004-11-16
申请号：US10227717
申请日：2002-08-26
IPC分类号： B24C100
摘要： A multistage fine-hole machining device has lap stations for lapping an inner surface defining a through-hole of a workpiece. Each of the lap stations has a passing unit for passing wire through the through-hole of the workpiece, a supply unit for supplying a polishing material to the wire, and a sliding unit for effecting relative sliding movement between the workpiece and the wire while the wire is passed through the through-hole of the workpiece and is supplied with the polishing material to thereby lap the inner surface of the workpiece with the polishing material and enlarge the diameter of the through-hole. A transfer device successively transfers the workpiece to each of the lap stations to lap the inner surface of the workpiece at each of the lap stations during the lapping operation for successively enlarging the diameter of the through-hole to a preselected diameter.
摘要翻译： 多级微孔加工装置具有用于研磨限定工件的通孔的内表面的搭接台。 每个搭接站具有用于使线穿过工件的通孔的通过单元，用于向线材提供抛光材料的供应单元和用于在工件和线之间实现相对滑动的滑动单元，同时 电线通过工件的通孔，并被供给研磨材料，从而用研磨材料搭接工件的内表面，并且扩大通孔的直径。 转移装置在研磨操作期间将工件连续地传送到每个搭接站，以在每个搭接站处搭接工件的内表面，以连续地将通孔的直径扩大到预定直径。
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