公开(公告)号：US06451659B1

公开(公告)日：2002-09-17

申请号：US09453576

申请日：1999-12-03

申请人： Sylvain Delage ,  Simone Cassette ,  Achim Henkel ,  Patrice Salzenstein

发明人： Sylvain Delage ,  Simone Cassette ,  Achim Henkel ,  Patrice Salzenstein

IPC分类号： H01L21331

CPC分类号： H01L29/66318 ,  H01L23/367 ,  H01L29/0817 ,  H01L29/7371 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.

摘要翻译： 异质结双极晶体管类型的半导体部件在衬底上包括放置在基底上的集电极，基极和台面状发射体。 双极晶体管还包括与基极和发射极台面的侧面接触的电绝缘元件，所述元件具有与台面的宽度相同幅度的宽度，并为组件提供更大的稳定性。 此外，制造这种部件的方法特别包括通过发射极台面的构成层离子注入绝缘离子以确定电绝缘元件的步骤。

公开(公告)号：US6031255A

公开(公告)日：2000-02-29

申请号：US86599

申请日：1998-05-29

申请人： Sylvain Delage ,  Simone Cassette ,  Achim Henkel ,  Patrice Salzenstein

发明人： Sylvain Delage ,  Simone Cassette ,  Achim Henkel ,  Patrice Salzenstein

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L23/367 ,  H01L29/08 ,  H01L29/205 ,  H01L29/737

CPC分类号： H01L29/66318 ,  H01L23/367 ,  H01L29/0817 ,  H01L29/7371 ,  H01L2924/0002

摘要： A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.

摘要翻译： 异质结双极晶体管类型的半导体部件在衬底上包括放置在基底上的集电极，基极和台面状发射体。 双极晶体管还包括与基极和发射极台面的侧面接触的电绝缘元件，所述元件具有与台面的宽度相同幅度的宽度，并为组件提供更大的稳定性。 此外，制造这种部件的方法特别包括通过发射极台面的构成层离子注入绝缘离子以确定电绝缘元件的步骤。

公开(公告)号：US06858509B2

公开(公告)日：2005-02-22

申请号：US10149433

申请日：2000-12-15

申请人： Sylvain Delage ,  Simone Cassette ,  Didier Floriot ,  Arnaud Girardot

发明人： Sylvain Delage ,  Simone Cassette ,  Didier Floriot ,  Arnaud Girardot

IPC分类号： H01L21/265 ,  H01L21/331 ,  H01L29/737

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A collector-up heterojunction bipolar transistor including, stacked on a substrate, an emitter layer, a base layer, and a collector layer. In this transistor the surface area of the base-emitter junction is of smaller dimensions than the surface area of the base-collector junction. Further, the material of the base layer exhibits a sensitivity of the electrical conductivity to ion implantation that is lower than the sensitivity of the electrical conductivity of the material of the emitter layer to the same ion implantation.

摘要翻译： 一种收集器异质结双极晶体管，包括堆叠在基板上的发射极层，基极层和集电极层。 在该晶体管中，基极 - 发射极结的表面积比基极 - 集电极结的表面积小。 此外，基层的材料表现出离子注入的电导率的灵敏度低于发射极层的材料对相同的离子注入的电导率的灵敏度。

公开(公告)号：US5411632A

公开(公告)日：1995-05-02

申请号：US147482

申请日：1993-11-05

申请人： Sylvain Delage ,  Herve Blanck ,  Simone Cassette

发明人： Sylvain Delage ,  Herve Blanck ,  Simone Cassette

IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/308 ,  H01L21/331 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L21/00

CPC分类号： H01L29/66318 ,  H01L21/30612 ,  H01L21/30621 ,  H01L21/3081 ,  H01L29/7371 ,  Y10S438/978

摘要： Disclosed is a method for the etching of at least two layers of semiconductor materials having different natures, with a view to making a mesa for the self-alignment of the metallizations of a transistor. The heterojunction must comprise a first layer of a material containing As, which is etched by reactive ion etching, and a second layer of a material containing P which is etched chemically. Application to the making of HBT type vertical heterojunction transistors.

摘要翻译： 公开了一种用于蚀刻具有不同性质的至少两层半导体材料的方法，以便制造用于晶体管的金属化的自对准的台面。 异质结必须包括通过反应离子蚀刻蚀刻的包含As的材料的第一层和包含被化学蚀刻的P的材料的第二层。 应用于制造HBT型垂直异质结晶体管。

公开(公告)号：US06559534B1

公开(公告)日：2003-05-06

申请号：US09720822

申请日：2001-01-12

申请人： Didier Floriot ,  Sylvain DeLage ,  Simone Cassette ,  Jean-Pascal Duchemin

发明人： Didier Floriot ,  Sylvain DeLage ,  Simone Cassette ,  Jean-Pascal Duchemin

IPC分类号： H01L2310

CPC分类号： H01L23/3672 ,  H01L23/36 ,  H01L23/3732 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thermal capacitor component which includes, on a substrate, a stack of different layers defined in the form of a mesa terminating at its upper part in an electrical contact layer, which layer is coated with an electrically and thermally conducting layer surmounted by a heat sink element in contact with the conducting layer. The heat sink element has a plane shape. In addition, the component has at least one pad including another stack of layers which is also coated with an electrically and thermally conducting layer. The heat sink element is also in contact with the conducting layer of this stack so as to conduct the heat from the heat sink element into the substrate. Such a thermal capacitor may find application in the cooling of semiconductor components.

摘要翻译： 一种热电容器部件，其在基板上包括以台状形式定义的不同层的堆叠，其在其上部终止于电接触层中，所述层涂覆有被导热层覆盖的导电和导热层 元件与导电层接触。 散热元件具有平面形状。 此外，该部件具有至少一个垫，该垫包括另外的层叠层，其也涂覆有导电和导热层。 散热元件也与该堆叠的导电层接触，以将热量从散热元件传导到衬底中。 这种热电容器可用于半导体部件的冷却。

公开(公告)号：US5719433A

公开(公告)日：1998-02-17

申请号：US672844

申请日：1996-07-25

申请人： Sylvain Delage ,  Simone Cassette ,  Herve Blanck ,  Eric Chartier

发明人： Sylvain Delage ,  Simone Cassette ,  Herve Blanck ,  Eric Chartier

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L23/34 ,  H01L23/367 ,  H01L23/522 ,  H01L27/06 ,  H01L29/737

CPC分类号： H01L23/5221 ,  H01L23/367 ,  H01L2924/0002

摘要： A semiconductor component that could be a power transistor type of component comprises mesa-structured elementary bipolar transistors. This component has a thick, metal heat sink of which a part (PI) takes the form of a bridge and a part is in contact with the substrate. The legs of the bridge lie on the entire unit constituted by the mesas. The heat sink made on the front face of the substrate may be connected to the rear face of the substrate comprising a ground plate. The discharging of the heat is thus appreciably fostered.

摘要翻译： 可以是功率晶体管类型的部件的半导体部件包括台面结构的基本双极晶体管。 该部件具有厚的金属散热器，其中部分（PI）采取桥的形式，并且部分与基板接触。 桥梁的腿位于由台面构成的整个单元上。 在基板的正面上形成的散热片可以连接到包括接地板的基板的背面。 因此，明显地促进了放热。