公开(公告)号：US10056355B2

公开(公告)日：2018-08-21

申请号：US15803248

申请日：2017-11-03

申请人： TAIWAN SEMICONDUCTOR CO., LTD.

发明人： Chien-Chung Chen ,  Sen Mao ,  Hsin-Liang Lin

IPC分类号： H01L23/495 ,  H01L25/07 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L25/072 ,  H01L23/3121 ,  H01L24/06 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/40101 ,  H01L2224/40137 ,  H01L2224/40245 ,  H01L2224/48101 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2224/84 ,  H01L2224/45099

摘要： A common-source type package structure is provided in the present invention. In the package structure, an integrated component body is configured a common-source pin region, a first arrangement region and a second arrangement region. The second and first arrangement regions are spaced apart from each other. A first MOSFET die and a second MOSFET are respectively located at the first and second arrangement region respectively, and have a top surface, a source electrode pad and a gate electrode pad. The source electrode pad and the gate electrode pad are exposed to the top surface and spaced apart from each other. A common-source connection element is connected to the source electrode pad and the common-source pin region. A gate connection element is connected to the gate electrode pad and a gate pin region of the integrated component body.

公开(公告)号：US10090298B2

公开(公告)日：2018-10-02

申请号：US15447800

申请日：2017-03-02

申请人： TAIWAN SEMICONDUCTOR CO., LTD.

发明人： Chien-Chung Chen ,  Sen Mao ,  Hsin-Liang Lin

IPC分类号： H01L23/495 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417

摘要： An integrated packaging structure is provided. In the package structure, an integrated component body has a first source region, a second source region, a first setting region, and a second setting region, which are separated from each other. A first MOSFET die and a second MOSFET die are located on the first setting region and the second setting region respectively, and have a top surface, a source electrode pad and a gate electrode pad. The source electrode pad and the gate electrode pad are exposed from the top surface and spaced apart from each other. A first source connection element is connected to the source electrode pad of the first MOSFET die and the first source region. A second source connection element is connected to the source electrode pad of the second MOSFET die and the second source region. A gate connection element is connected to the gate electrode pad and a gate region of the integrated component body.

公开(公告)号：US09997500B1

公开(公告)日：2018-06-12

申请号：US15439268

申请日：2017-02-22

申请人： TAIWAN SEMICONDUCTOR CO., LTD.

发明人： Chien-Chung Chen ,  Sen Mao ,  Hsin-Liang Lin

IPC分类号： H01L23/495 ,  H01L25/07 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L25/072 ,  H01L23/3121 ,  H01L24/06 ,  H01L24/40 ,  H01L24/48 ,  H01L2224/371 ,  H01L2224/40101 ,  H01L2224/40137 ,  H01L2224/40245 ,  H01L2224/48101 ,  H01L2224/48137 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2224/84

摘要： A common-source type package structure is provided in the present invention. In the package structure, an integrated component body is configured a common-source pin region, a first arrangement region and a second arrangement region. The second and first arrangement regions are spaced apart from each other. A first MOSFET die and a second MOSFET are respectively located at the first and second arrangement region respectively, and have a top surface, a source electrode pad and a gate electrode pad. The source electrode pad and the gate electrode pad are exposed to the top surface and spaced apart from each other. A common-source connection element is connected to the source electrode pad and the common-source pin region. A gate connection element is connected to the gate electrode pad and a gate pin region of the integrated component body.